SEMICONDUCTOR DEVICE, DISPLAY DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT
A semiconductor device includes a first gate electrode, a first gate insulating film arranged on the first gate electrode, a semiconductor film arranged on the first gate insulating film and overlapping the first gate electrode, a first terminal in contact with the semiconductor film and electrically connected to the semiconductor film and the first gate electrode, a second terminal in contact with the semiconductor film and spaced apart from the first terminal, a second gate insulating film arranged over the semiconductor film, the first terminal and the second terminal, and a second gate electrode arranged on the second gate insulating film, overlapping the semiconductor film and electrically connected to the second terminal.
1 . A semiconductor device comprising:
a first gate electrode;
a first gate insulating film arranged on the first gate electrode;
a semiconductor film arranged on the first gate insulating film and overlapping the first gate electrode;
a first terminal in contact with the semiconductor film and electrically connected to the semiconductor film and the first gate electrode;
a second terminal in contact with the semiconductor film and spaced apart from the first terminal;
a second gate insulating film arranged over the semiconductor film, the first terminal and the second terminal; and
a second gate electrode arranged on the second gate insulating film, overlapping the semiconductor film and electrically connected to the second terminal.
2 . The semiconductor device according to claim 1 , further comprising:
a first rectifier circuit; and
a second rectifier circuit,
wherein either one of the first rectifier circuit or the second rectifier circuit is a diode-connected first transistor,
the other of the first rectifier circuit or the second rectifier circuit is a diode-connected second transistor,
the first transistor includes the first gate electrode, the first gate insulating film, the semiconductor film, the first terminal and the second terminal, and
the second transistor includes the second gate electrode, the second gate insulating film, the semiconductor film, the first terminal and the second terminal.
3 . The semiconductor device according to claim 2 , wherein the first terminal is a source electrode in the first rectifier circuit,
the second terminal is a drain electrode in the first rectifier circuit,
the second terminal is a source electrode in the second rectifier circuit, and
the first terminal is a drain electrode in the second rectifier circuit.
4 . The semiconductor device according to claim 2 , wherein the semiconductor film includes a channel region of the first transistor and a channel region of the second transistor between the first terminal and the second terminal in a plan view,
the first gate insulating film overlaps the first gate electrode in the channel region of the first transistor, and
the second gate insulating film overlaps the second gate electrode in the channel region of the second transistor.
5 . The semiconductor device according to claim 4 , wherein a position of the channel region of the first transistor is the same as a position of the channel region of the second transistor.
6 . The semiconductor device according to claim 4 , wherein the semiconductor film includes a first resistance region in which the first gate electrode does not overlap between the channel region of the first transistor and the second terminal in a plan view, and a second resistance region in which the second gate electrode does not overlap between the channel region of the second transistor and the first terminal in a plan view.
7 . The semiconductor device according to claim 6 , wherein the position of the channel region of the first transistor is different from the position of the channel region of the second transistor.
8 . The semiconductor device according to claim 7 , wherein the semiconductor film includes amorphous silicon, polycrystalline silicon or metal oxide.
9 . A display device comprising:
the semiconductor device according to claim 1 ;
a display section including a plurality of pixels electrically connected to the plurality of semiconductor devices; and
a control circuit electrically connected to the plurality of pixels and controlling the plurality of pixels.
10 . The display device according to claim 9 , wherein the control circuit is electrically connected to the semiconductor device.
11 . A semiconductor integrated circuit comprising:
the semiconductor device according to claim 1 , and
an electronic device electrically connected to the semiconductor device.