IP Library › Granted Patent US 12,229,358
Granted Patent B2
US 12,229,358 · App. 18/648,823 · Granted Feb 18, 2025

Touch panel and method for manufacturing touch panel

Inventors: Daiki Nakamura (Atsugi, JP); Masataka Ikeda (Shinjuku, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
G06F3/041G02F1/13338G06F2203/04103Y10T29/49002
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Quick Facts
Patent No.
US 12,229,358
App. No.
18/648,823
Granted
Feb 18, 2025
Kind
B2
Abstract

A touch panel capable of performing display and sensing along a curved surface or a touch panel that maintains high detection sensitivity even when it is curved along a curved surface is provided. A flexible display panel is placed along a curved portion included in a surface of a support. A first film layer is attached along a surface of the display panel by a bonding layer. Second to n-th film layers (n is an integer of 2 or more) are sequentially attached along a surface of the first film layer by bonding layers. A flexible touch sensor is attached along a surface of the n-th film layer by a bonding layer.

Claims (68)

1. An electronic device comprising:

a display panel comprising a display portion, the display portion comprising a plurality of pixels arranged in a matrix;

a touch sensor overlapping with the display portion;

a first bonding layer over the touch sensor;

a first layer over the first bonding layer, the first layer comprising an organic material;

a second bonding layer over the first layer; and

a second layer over the second bonding layer, the second layer comprising an organic material,

wherein each of the plurality of pixels comprises an organic EL element,

wherein the display panel comprises a first region, a second region, and a third region between the first region and the second region,

wherein the first region and the second region overlap with each other, and

wherein the third region comprises a curved surface.

2. The electronic device according to claim 1 ,

wherein each of the first bonding layer and the second bonding layer comprises a light-scattering material.

3. The electronic device according to claim 1 ,

wherein the first bonding layer and the second bonding layer comprises the same material.

4. The electronic device according to claim 1 ,

wherein the first layer and the second layer comprises the same material.

5. The electronic device according to claim 1 , further comprising a transistor electrically connected to the organic EL element,

wherein the transistor comprises an oxide semiconductor in a channel formation region.

6. The electronic device according to claim 5 ,

wherein the oxide semiconductor comprises indium oxide.

7. An electronic device comprising:

a display panel comprising a display portion, the display portion comprising a plurality of pixels arranged in a matrix;

a touch sensor overlapping with the display portion;

a first bonding layer over the touch sensor;

a first layer over the first bonding layer, the first layer comprising an organic material;

a second bonding layer over the first layer;

a second layer over the second bonding layer, the second layer comprising an organic material; and

a third layer under the touch sensor, the third layer comprising an organic material,

wherein each of the plurality of pixels comprises an organic EL element,

wherein the display panel comprises a first region, a second region, and a third region between the first region and the second region,

wherein the first region and the second region overlap with each other, and

wherein the third region comprises a curved surface.

8. The electronic device according to claim 7 ,

wherein each of the first bonding layer and the second bonding layer comprises a light-scattering material.

9. The electronic device according to claim 7 ,

wherein the first bonding layer and the second bonding layer comprises the same material.

10. The electronic device according to claim 7 ,

wherein the first layer and the second layer comprises the same material.

11. The electronic device according to claim 7 , further comprising a transistor electrically connected to the organic EL element,

wherein the transistor comprises an oxide semiconductor in a channel formation region.

12. The electronic device according to claim 11 ,

wherein the oxide semiconductor comprises indium oxide.

13. An electronic device comprising:

a display panel comprising a display portion, the display portion comprising a plurality of pixels arranged in a matrix;

a touch sensor overlapping with the display portion;

a first bonding layer over the touch sensor;

a first layer over the first bonding layer, the first layer comprising an organic material;

a second bonding layer over the first layer; and

a second layer over the second bonding layer, the second layer comprising an organic material,

wherein each of the plurality of pixels comprises an organic EL element,

wherein the display panel comprises a first region, a second region, and a third region between the first region and the second region,

wherein the first region and the second region overlap with each other,

wherein the third region comprises a curved surface,

wherein a thickness of the first bonding layer is in a range of 10 μm to 50 μm,

wherein a thickness of the first layer is in a range of 20 μm to 100 μm,

wherein a thickness of the second bonding layer is in a range of 10 μm to 50 μm, and

wherein a thickness of the second layer is in a range of 20 μm to 100 μm.

14. The electronic device according to claim 13 ,

wherein each of the first bonding layer and the second bonding layer comprises a light-scattering material.

15. The electronic device according to claim 13 ,

wherein the first bonding layer and the second bonding layer comprises the same material.

16. The electronic device according to claim 13 ,

wherein the first layer and the second layer comprises the same material.

17. The electronic device according to claim 13 , further comprising a transistor electrically connected to the organic EL element,

wherein the transistor comprises an oxide semiconductor in a channel formation region.

18. The electronic device according to claim 17 ,

wherein the oxide semiconductor comprises indium oxide.

Priority Claims (2)
JP 2013-249280 · Dec 2, 2013 · national
JP 2014-104981 · May 21, 2014 · national
Continuity (5)
Continuation 17842985 · Jun 17, 2022
Continuation 16709078 · Dec 10, 2019
Continuation 15988562 · May 24, 2018
Continuation 14553308 · Nov 25, 2014
Related Publication 20240281080A1 · Aug 22, 2024
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