Passivated contact structure and solar cell comprising the same, cell assembly, and photovoltaic system
A solar cell includes a silicon substrate, a first doped region, and a second doped region. The first doped region includes a first passivated contact region on the silicon substrate and a second passivated contact region on the first passivated contact region. The first passivated contact region includes a first doped layer, a first passivation layer, and a second doped layer. The second passivated contact region includes a second passivation layer and a third doped layer. The second doped region includes a third passivation layer. Each of the first and third passivation layers includes a porous structure. One of the first and second doped regions is a P-type doped region, the other of the first and second doped regions is an N-type doped region, and a hole density of a corresponding passivation layer in the P-type doped region is greater than that in the N-type doped region.
1. A solar cell, comprising:
a silicon substrate;
a first doped region and a second doped region; wherein,
the first doped region comprises:
a first passivated contact region disposed on the silicon substrate, and a second passivated contact region disposed on the first passivated contact region;
wherein:
the first passivated contact region comprises a first doped layer, a first passivation layer, and a second doped layer;
the second passivated contact region comprises a second passivation layer and a third doped layer;
the first doped layer, the first passivation layer, the second doped layer, the second passivation layer, and the third doped layer are disposed on the silicon substrate in sequence;
the second passivated contact region comprises an opening for connecting a conductive layer of the solar cell to the first passivated contact region;
the second doped region comprises a third passivation layer;
each of the first passivation layer and the third passivation layer includes a porous structure; and
one of the first doped region and the second doped region is a P-type doped region, the other of the first doped region and the second doped region is an N-type doped region, and a hole density of a corresponding passivation layer in the P-type doped region is greater than a hole density of a corresponding passivation layer in the N-type doped region.
2. The solar cell according to claim 1 , wherein
the porous structure of the first passivation layer comprises a hole region, and one or more of the first doped layer and the second doped layer are disposed in the hole region.
3. The solar cell according to claim 1 , wherein
the second doped layer and the third doped layer have opposite doping polarities.
4. The solar cell according to claim 1 , wherein
the first doped layer and the second doped layer have a same doping polarity.
5. The solar cell according to claim 2 , wherein
a pore size of the porous structure is less than 20 μm.
6. The solar cell according to claim 2 , wherein
a part of the hole region of the porous structure comprises the one or more of the first doped layer and the second doped layer.
7. The solar cell according to claim 2 , wherein
a ratio of an area of the hole region of the porous structure to an entire area of the porous structure is less than 20%.
8. The solar cell according to claim 1 , wherein
a thickness of the second passivation layer is greater than a thickness of the first passivation layer.
9. The solar cell according to claim 1 , wherein
a thickness of the first passivation layer is in a range of 0.5-10 nm.
10. The solar cell according to claim 1 , wherein
a thickness of the second passivation layer is in a range of 5-150 nm.
11. The solar cell according to claim 1 , wherein
the first passivation layer and/or the second passivation layer include an oxide layer, a silicon carbide layer, an amorphous silicon layer, or a combination thereof.
12. The solar cell according to claim 11 , wherein
the oxide layer comprises one or more of a silicon oxide layer and an aluminum oxide layer.
13. The solar cell according to claim 1 , wherein
a doping concentration of the first doped layer is between a doping concentration of the silicon substrate and a doping concentration of the second doped layer.
14. The solar cell according to claim 1 , wherein
the second doped layer and/or the third doped layer comprise a polysilicon doped layer,
a silicon carbide doped layer, or an amorphous silicon doped layer.
15. The solar cell according to claim 14 , wherein
the silicon carbide doped layer in the second doped layer or the third doped layer comprises at least one silicon carbide doped film; and refractive indexes of the at least one silicon carbide doped films decreases from the silicon substrate toward outside of the solar cell.
16. The solar cell according to claim 14 , wherein
the silicon carbide doped layer in the second doped layer and/or in the third doped layer comprises a hydrogenated silicon carbide doped layer, and a conductivity of the hydrogenated silicon carbide doped layer is greater than 0.01 S·cm; and a thickness of the hydrogenated silicon carbide doped layer is greater than 10 nm.
17. A solar cell, comprising:
a silicon substrate;
a first doped region and a second doped region, spaced apart on a back side of the silicon substrate and having opposite polarities;
a first dielectric layer, disposed on a front side of the silicon substrate;
a second dielectric layer, disposed between the first doped region and the second doped region; and
a first conductive layer and a second conductive layer, respectively disposed in the first doped region and the second doped region;
wherein the first doped region comprises:
a first passivated contact region disposed on the silicon substrate, and a second passivated contact region disposed on the first passivated contact region;
wherein:
the first passivated contact region comprises a first doped layer, a first passivation layer, and a second doped layer;
the second passivated contact region comprises a second passivation layer and a third doped layer;
the first doped layer, the first passivation layer, the second doped layer, the second passivation layer, and the third doped layer are disposed on the silicon substrate in sequence;
the second passivated contact region comprises an opening for connecting a conductive layer of the solar cell to the first passivated contact region;
the second doped region comprises a third passivation layer;
each of the first passivation layer and the third passivation layer includes a porous structure; and
one of the first doped region and the second doped region is a P-type doped region, the other of the first doped region and the second doped region is an N-type doped region, and a hole density of a corresponding passivation layer in the P-type doped region is greater than a hole density of a corresponding passivation layer in the N-type doped region.
18. The solar cell according to claim 17 , wherein
the second doped region comprises a fourth doped layer disposed on the silicon substrate.
19. The solar cell according to claim 18 , wherein
the third passivation layer and a fifth doped layer are disposed on the fourth doped layer in sequence.
20. The solar cell according to claim 17 , wherein
grooves spaced apart are provided on the back side of the silicon substrate, and the first doped region and the second doped region are alternately disposed in the grooves.
21. The solar cell according to claim 17 , wherein
grooves spaced apart are provided on the back side of the silicon substrate; one of the first doped region and the second doped region is disposed in one of the grooves, and the other of the first doped region and the second doped region is disposed outside the grooves.
22. The solar cell according to claim 17 , wherein
a trench is provided between the first doped region and the second doped region.
23. The solar cell according to claim 21 , wherein
the first doped region and the second doped region are disposed in a part of regions inside and outside the grooves.
24. The solar cell according to claim 17 , wherein
the first dielectric layer and the second dielectric layer each include an aluminum oxide layer, a silicon nitride layer, a silicon oxynitride layer, a silicon carbide layer, an amorphous silicon layer, a silicon oxide layer, or a combination thereof.
25. The solar cell according to claim 24 , wherein
the first dielectric layer and/or the second dielectric layer comprise the aluminum oxide layer and the silicon carbide layer, or the silicon oxide layer and silicon carbide layer; and
a thickness of the first dielectric layer is greater than 50 nm, and a thickness of the second dielectric layer is greater than 25 nm.
26. The solar cell according to claim 25 , wherein
a thickness of the aluminum oxide layer or the silicon oxide layer in the first dielectric layer is less than 40 nm, a thickness of the aluminum oxide layer or the silicon oxide layer in the second dielectric layer is less than 25 nm, and a thickness of the silicon carbide layer in the first dielectric layer and/or in the second dielectric layer is greater than 10 nm.
27. The solar cell according to claim 25 , wherein
the silicon carbide layer in the first dielectric layer and/or in the second dielectric layer comprises at least one silicon carbide film; and refractive indexes of the at least one silicon carbide film decreases from the silicon substrate toward outside of the solar cell.
28. The solar cell according to claim 17 , wherein
the first conductive layer and the second conductive layer include transparent conductive oxide layer (TCO) transparent conductive films and/or metal electrodes.
29. The solar cell according to claim 17 , wherein
an electric field layer or a floating junction is further disposed between the front side of the silicon substrate and the second dielectric layer.
30. The solar cell according to claim 17 , wherein
one of the first doped region and the second doped region is a P-type doped region, and the other of the first doped region and the second doped region is an N-type doped region; and
a thickness of a corresponding passivation layer in the P-type doped region is greater than a thickness of a corresponding passivation layer in the N-type doped region.