TRANSFER PRINTING HIGH-PRECISION DEVICES
A device source wafer includes a wafer substrate, devices formed on or in the wafer substrate at a location on the wafer substrate, and test structures disposed on the wafer substrate connected to some but not all of the devices. The devices include a first device disposed at a first location and a second device disposed at a second different location on the wafer substrate. The test structures include at least a first test structure connected to the first device and a second test structure connected to the second device. The first test structure is adapted to measuring a characteristic of the first device and the second test structure is adapted to measuring the characteristic of the second device. An estimated characteristic of unmeasured devices is derived from the first and second device locations and measured characteristics and the device is selected based on the estimated characteristic.
1 - 15 . (canceled)
16 . A high-precision device system, comprising:
a target substrate; and
a high-precision device disposed on the target substrate, the high-precision device comprising a broken or separated tether,
wherein a characteristic of the high-precision device is known to within 1% accuracy.
17 . The high-precision device system of claim 16 , wherein the high-precision device is an electrical device, an optical device, an electro-optical device, a passive device, or an active device.
18 . The high-precision device system of claim 16 , wherein the characteristic is a performance attribute that is one of resistance, a current-voltage relationship, and a peak emission wavelength.
19 . The high-precision device system of claim 16 , wherein the high-precision device is a resistor, a micro-resistor, a capacitor, an inductor, a transistor, or a light-emitting diode.
20 . The high-precision device system of claim 16 , wherein the high-precision device has a length or width, or both length and width, no greater than 200 microns.
21 . The high-precision device system of claim 16 , wherein the high-precision device comprises a device circuit and connection posts that extend from the device and are electrically connected to the device circuit, the target substrate comprises substrate contact pads, and the connection posts electrically connect the device circuit to the substrate contact pad.
22 . The high-precision device system of claim 16 , comprising multiple high-precision devices disposed on the target substrate and wherein two or more of the multiple high-precision devices have a characteristic known to within 1% accuracy.
23 . A method of making a high-precision device system, comprising:
providing a device source wafer, comprising:
a wafer substrate;
devices formed on or in the wafer substrate, each of the devices disposed at a location on the wafer substrate, the devices comprising a first device disposed at a first location on the wafer substrate and a second device disposed at a second location on the wafer substrate, different from the first location; and
test structures disposed on the wafer substrate connected to a proper subset of the devices, the test structures comprising at least a first test structure connected to the first device and a second test structure connected to the second device,
wherein the first test structure is adapted to measuring a characteristic of the first device and the second test structure is adapted to measuring the characteristic of the second device;
measuring the characteristic of the first device using the first test structure and measuring the characteristic of the second device using the second test structure;
recording the characteristic of the first device in association with the first location and recording the characteristic of the second device in association with the second location;
providing a target substrate;
selecting a device other than the first device and other than the second device, the selection depending on spatial proximity of the device to the first location or to the second location, or both; and
printing the selected device to the target substrate.
24 . The method of claim 23 , wherein printing comprises breaking or separating a tether connecting the devices to the wafer substrate.
25 . The method of claim 23 , wherein the device is a high-precision device having a characteristic known to within 1% accuracy.
26 . The method of claim 23 , wherein the device is an electrical device, an optical device, an electro-optical device, a passive device, or an active device.
27 . The method of claim 23 , wherein the device has a characteristic that is a performance attribute that is one of resistance, a current-voltage relationship, and a peak emission wavelength.
28 . The method of claim 23 , wherein the device is a resistor, a micro-resistor, a capacitor, an inductor, a transistor, or a light-emitting diode.
29 . The method of claim 23 , wherein the device is a micro-device having a length or width, or both length and width, no greater than 200 microns.
30 . The method of claim 25 , wherein the device comprises a device circuit and connection posts that extend from the device and are electrically connected to the device circuit, the target substrate comprises substrate contact pads, and the method comprises electrically connecting the device circuit to the substrate contact pad with the connection posts.
31 . The method of claim 23 , wherein the wafer substrate comprises a sacrificial layer comprising sacrificial portions and anchors spacing apart the sacrificial portions, each of the devices is disposed completely over a corresponding one of the sacrificial portions, and each of the devices is physically connected to an anchor of the anchors with a tether.
32 . The method of claim 31 , comprising etching the sacrificial portions to suspend the device over the wafer substrate with the tether.
33 . A method of making a high-precision device system, comprising:
providing a source wafer having devices and test structures disposed thereon;
measuring a characteristic of a first device of the devices using a first test structure of the test structures;
selecting a second device of the devices based on the characteristic measured of the first device and a location of the second device on the source wafer relative to a location of the first device; and
printing the second device from the source wafer to a target substrate.
34 . The method of claim 33 , comprising measuring a characteristic of a third device of the devices using a second test structure of the test structures, wherein the selecting of the second device is further based on the characteristic measured of the third device and the location of the second device relative to a location of the third device.
35 . The method of claim 33 , wherein the second device is selected based on a characteristic of the second device being known to within 0.1% accuracy based on the characteristic measured of the first device and the location of the second device on the source wafer relative to the location of the first device.