IP Library › Granted Patent US 12,613,640
Granted Patent B2
US 12,613,640 · App. 18/665,545 · Granted Apr 28, 2026

Memory controller and memory data receiving method

Inventors: Shih-Chang Chen (HsinChu, TW); Chih-Wei Chang (HsinChu, TW); Chun-Chi Yu (HsinChu, TW)
Assignee: Realtek Semiconductor Corp.
G06F3/0619G06F3/0659G06F3/0673
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Quick Facts
Patent No.
US 12,613,640
App. No.
18/665,545
Granted
Apr 28, 2026
Kind
B2
Abstract

A memory controller is arranged to access a memory device, and includes a receiving circuit. The receiving circuit is arranged to receive a data signal and a data strobe signal from the memory device, and includes a sampling circuit and a comparison circuit. The sampling circuit is arranged to sample the data signal or a delayed data signal according to a plurality of delayed versions of the data strobe signal to generate a plurality of sampling values, wherein the delayed data signal is a delayed version of the data signal. The comparison circuit is arranged to compare the plurality of sampling values to obtain a comparison result, and arranged to determine to provide the data signal or the delayed data signal to the sampling circuit according to the comparison result.

Claims (29)

1 . A memory controller, arranged to access a memory device, the memory controller comprising:

a receiving circuit, arranged to receive a data signal and a data strobe signal from the memory device, the receiving circuit comprising:

a sampling circuit, arranged to sample the data signal or a delayed data signal according to a plurality of delayed versions of the data strobe signal, in order to generate a plurality of sampling values, wherein the delayed data signal is a delayed version of the data signal; and

a comparison circuit, arranged to compare the plurality of sampling values to obtain a comparison result, and arranged to determine to provide the data signal or the delayed data signal to the sampling circuit according to the comparison result;

wherein the plurality of delayed versions of the data strobe signal comprise a first delayed data strobe signal generated according to a first delay value, a second delayed data strobe signal generated according to a second delay value, and a third delayed data strobe signal generated according to a third delay value; the sampling circuit samples the data signal or the delayed data signal according to the first delayed data strobe signal, the second delayed data strobe signal, and the third delayed data strobe signal in sequence, to generate a first sampling value, a second sampling value, and a third sampling value, respectively; and the first delay value is smaller than the second delay value, and the second delay value is smaller than the third delay value.

2 . The memory controller of claim 1 , wherein when the data signal is provided to the sampling circuit and the third sampling value is different from the first sampling value and the second sampling value, the comparison circuit determines to provide the delayed data signal to the sampling circuit.

3 . The memory controller of claim 1 , wherein when the delayed data signal is provided to the sampling circuit and the first sampling value is different from the second sampling value and the third sampling value, the comparison circuit determines to provide the data signal to the sampling circuit.

4 . The memory controller of claim 1 , wherein the receiving circuit further comprises a delay control circuit, the delay control circuit is arranged to control the first delay value, the second delay value, and the third delay value according to the comparison result; and when the delayed data signal is provided to the sampling circuit, and the third sampling value is different from the first sampling value and the second sampling value, the delay control circuit decreases the first delay value, the second delay value, and the third delay value.

5 . The memory controller of claim 4 , wherein when the data signal is provided to the sampling circuit and the first sampling value is different from the second sampling value and the third sampling value, the delay control circuit increases the first delay value, the second delay value, and the third delay value.

6 . The memory controller of claim 1 , wherein the sampling circuit samples the data signal or the delayed data signal according to a first edge of the first delayed data strobe signal to generate the first sampling value, samples the data signal or the delayed data signal according to a second edge of the second delayed data strobe signal to generate the second sampling value, and samples the data signal or the delayed data signal according to a third edge of the third delayed data strobe signal to generate the third sampling value.

7 . The memory controller of claim 6 , wherein the first edge is an edge closest to one side of the second edge in all edges of the first delayed data strobe signal, and the third edge is an edge closest to another side of the second edge in all edges of the third delayed data strobe signal.

8 . A memory data receiving method, comprising the following steps:

(A) receiving a data signal and a data strobe signal from a memory device;

(B) generating a delayed data signal according to a predetermined delay value;

(C) selecting the data signal or the delayed data signal as a target data signal, and sampling the target data signal according to a plurality of delayed versions of the data strobe signal to generate a plurality of sampling values; and

(D) comparing the plurality of sampling values to obtain a comparison result, and determining to provide the data signal or the delayed data signal as the target data signal according to the comparison result;

wherein the step (C) further comprises:

(C-1) generating a first delayed data strobe signal according to a first delay value;

(C-2) generating a second delayed data strobe signal according to a second delay value;

(C-3) generating a third delayed data strobe signal according to a third delay value; and

(C-4) sampling the target data signal according to the first delayed data strobe signal, the second delayed data strobe signal, and the third delayed data strobe signal in sequence, to generate a first sampling value, a second sampling value, and a third sampling value, respectively;

wherein the first delay value is smaller than the second delay value, and the second delay value is smaller than the third delay value.

9 . The memory data receiving method of claim 8 , wherein in response to the data signal being provided as the target data signal and the third sampling value being different from the first sampling value and the second sampling value, determining to provide the delayed data signal as the target data signal in the step (D).

10 . The memory data receiving method of claim 8 , wherein in response to the delayed data signal being provided as the target data signal and the first sampling value being different from the second sampling value and the third sampling value, determining to provide the data signal as the target data signal in the step (D).

11 . The memory data receiving method of claim 8 , further comprising:

(E) adjusting the first delay value, the second delay value, and the third delay value according to the comparison result, wherein in response to the delayed data signal being provided as the target data signal, and the third sampling value being different from the first sampling value and the second sampling value, the first delay value, the second delay value, and the third delay value are decreased.

12 . The memory data receiving method of claim 11 , wherein in response to the data signal being provided as the target data signal, and the first sampling value being different from the second sampling value and the third sampling value, the first delay value, the second delay value, and the third delay value are increased.

13 . The memory data receiving method of claim 8 , wherein in the step (C-4), the target data signal is sampled according to a first edge of the first delayed data strobe signal, a second edge of the second delayed data strobe signal, and a third edge of the third data strobe signal, respectively.

14 . The memory data receiving method of claim 13 , wherein the first edge is an edge closest to one side of the second edge in all edges of the first delayed data strobe signal, and the third edge is an edge closest to another side of the second edge in all edges of the third delayed data strobe signal.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 16, 2024
From: CHEN, SHIH-CHANG; CHANG, CHIH-WEI; YU, CHUN-CHI
To: REALTEK SEMICONDUCTOR CORP.
Reel/Frame 067429/0015 →
Priority Claims (1)
TW 112119865 · May 29, 2023 · national
Continuity (1)
Related Publication 20240402915A1 · Dec 5, 2024
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