LIQUID MOLD COMPOUNDS, REACTION PRODUCTS OF WHICH BECOME PLATABLE UPON EXPOSURE TO LASER ENERGY

1 . A thermosetting resin composition in a flowable state at room temperature, comprising:

a thermosetting resin matrix,

a silica filler,

spinel crystals, and

a cure component comprising the combination of a clathrate comprising the combination of a tetrakis phenol compound and a nitrogen-containing curative, wherein when disposed on at least a portion of a substrate and cured to a non-flowable state on or about the portion of the substrate after exposure to elevated temperature conditions, the cured composition is platable upon exposure to laser energy and the substrate on which the cured composition is disposed on or about exhibits a warpage of less than about 3 cm.

2 . The composition according to claim 1 , wherein when cured the composition has at least one of the following physical properties:

(a) storage modulus in the range of about 25 GPas or less at room temperature,

(b) a CTE α 1 of less than or equal to 20 ppm/° C.,

(c) a CTE α 2 of less than or equal to 40 ppm/° C.

3 . The composition according to claim 1 , wherein the substrate is a wafer constructed of silicon and the composition is disposed on or about the wafer at a thickness of less than about 50 percent of the thickness of the wafer.

4 . The composition according to claim 1 , wherein the spinel crystals are formed from metals selected from one or more of cadmium, chromium, manganese, nickel, zinc, copper, cobalt, iron, magnesium, tin, gold, silver and titanium.

5 . A method of improving warpage resistance of An encapsulated molded wafer, steps of which comprise:

Providing a wafer;

Providing a thermosetting resin composition according to claim 1 in contact with the wafer; and

Exposing the wafer and the thermosetting resin composition to conditions favorable to allow the thermosetting resin composition to flow about the wafer and cure to reaction product of the thermosetting resin composition which is capable of improving warpage resistance by about 50 percent or greater.

6 . The method according to claim 5 , wherein the warpage resistance is improved by about 65 percent or greater.

7 . The method according to claim 5 , wherein the warpage resistance is improved by about 80 percent greater.

8 . A product formed from the method of claim 5 .

9 . The composition of claim 1 , wherein the thermosetting resin component comprises an epoxy resin, an episulfide resin, an oxazine, an oxazoline, a cyanate ester, and/or a maleimide-, a nadimide- or an itaconimide-containing component.

10 . A method for producing a molded electrically interconnected semiconductor device, steps of which comprise:

A. Providing a substrate;

B. Dispensing onto at least a portion of a surface of the substrate a thermosetting resin composition in a flowable state at room temperature according to claim 1 ;

C. Exposing the substrate and the thermosetting resin composition to elevated temperature conditions suitable to cure the composition to form a reaction product on the substrate;

D. Exposing the so-formed reaction product to laser energy in a predetermined pattern to ablate the reaction product in that predetermined pattern and in so doing exposing a residue of the spinel crystal; and

E. Performing a plating over the predetermined pattern ablated in the cured reaction product.

11 . The method according to claim 10 , further comprising:

F. Dispensing onto at least a portion of a surface of the reaction product of the cured thermosetting resin composition from step C a further portion of the thermosetting resin composition;

G. Exposing the further portion of thermosetting resin composition to elevated temperature conditions suitable to cure the composition to form a reaction product;

H. Exposing the so-formed reaction product to laser energy in a predetermined pattern to ablate the reaction product in that predetermined pattern and in so doing exposing a residue of the spinel crystal; and

I. Performing a plating over the predetermined pattern ablated in the cured reaction product.

12 . The method according to claim 10 , further comprising:

Repeating steps F-I.

13 . A three dimensional molded electrically interconnected semiconductor device from the method of claim 10 .

14 . A molded electrically interconnected semiconductor device comprising:

A substrate;

A thermosetting resin composition having been cured to a reaction product through exposure to elevated temperature conditions and having been exposed to laser energy in a predetermined pattern and having formed on that predetermined pattern metallization through plating disposed on or about the substrate.