IP Library Granted Patent US 12,237,317
Granted Patent B2
US 12,237,317 · App. 18/670,209 · Granted Feb 25, 2025

LED device and light emitting apparatus including the same

Inventors: Junpeng Shi (Fujian, CN); Chen-Ke Hsu (Fujian, CN); Chang-Chin Yu (Fujian, CN); Yanqiu Liao (Fujian, CN); Zhenduan Lin (Fujian, CN); Zhaowu Huang (Fujian, CN); Senpeng Huang (Fujian, CN)
Assignee: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY CO., LTD.
H01L25/167H01L27/156H01L33/56H01L33/62
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Quick Facts
Patent No.
US 12,237,317
App. No.
18/670,209
Granted
Feb 25, 2025
Kind
B2
Abstract

A LED device includes multiple LED chips each including opposite first and second surfaces, a side surface, and an electrode assembly disposed on the second surface and including first and second electrodes. The first surface of each of the LED chips is a light exit surface. The LED device further includes an electric circuit layer assembly disposed on the second surfaces of the LED chips and having opposite first and second surfaces and a side surface. The first surface is electrically connected to the first and second electrodes. The LED device further includes an encapsulating layer enclosing the LED chips and the electric circuit layer assembly to expose the second surface of the electric circuit layer assembly.

Claims (30)

1. An LED device comprising: a plurality of LED chips, each of said LED chips having a first surface, a second surface opposite to said first surface, and a side surface that is connected between said first surface and said second surface, and including an electrode assembly disposed on said second surface, said first surface being a light exit surface; a first encapsulating sub-layer enclosing said side surface of each of said LED chips; an electric circuit layer assembly including a first electric circuit layer disposed on said second surface of each of said LED chips and said first encapsulating sub-layer, said first electric circuit layer including a first portion in contact with said electrode assembly of each of said LED chips and a second portion in direct contact with said first encapsulating sub-layer; and a second encapsulating sub-layer disposed on a portion of a top surface of said first electric circuit layer and enclosing said electric circuit layer assembly in such a manner that at least a portion of a surface of said second portion of said first electric circuit layer is exposed from said second encapsulating sub-layer.

2. The LED device as claimed in claim 1 , wherein

said electrode assembly of each of said LED chips includes a first electrode and a second electrode, and

said first electric circuit layer defines a first surface of said electric circuit layer assembly, said first surface of said electric circuit layer assembly being electrically connected to said first electrode and said second electrode of a corresponding one of said LED chips.

3. The LED device as claimed in claim 1 , wherein

said first portion of said first electric circuit layer is in direct contact with said electrode assembly of each of said LED chips; and

said second portion of said first electric circuit layer is in direct contact with said first encapsulating sub-layer.

4. The LED device as claimed in claim 1 , wherein a distance between adjacent two of said LED chips is less than 50 μm.

5. The LED device as claimed in claim 2 , wherein said electric circuit layer assembly further includes a second electric circuit layer that defines a second surface of said electric circuit layer assembly and that is disposed on said first electric circuit layer opposite to said LED chips.

6. The LED device as claimed in claim 5 , wherein said second encapsulating sub-layer covers said second electric circuit layer in such a manner that said second surface of said electric circuit layer assembly is exposed from said second encapsulating sub-layer.

7. The LED device as claimed in claim 6 , wherein an area of a projection of said first electric circuit layer on said first encapsulating sub-layer is greater than an area of a projection of said second electric circuit layer on said first encapsulating sub-layer.

8. The LED device as claimed in claim 6 , wherein a projection of said second electric circuit layer on said first encapsulating sub-layer lies within a projection of said first electric circuit layer on said first encapsulating sub-layer.

9. The LED device as claimed in claim 5 , wherein

said first electric circuit layer includes a plurality of first electric circuit sub-layers; and

said second electric circuit layer includes a plurality of second electric circuit sub-layers.

10. The LED device as claimed in claim 9 , wherein one of said plurality of said first electric circuit sub-layers of said first electric circuit layer is electrically connected to said first electrode of said electrode assembly of each of said LED chips, and each of remainder of said plurality of said first electric circuit sub-layers of said first electric circuit layer is electrically connected to said second electrode of said electrode assembly of a corresponding one of said LED chips.

11. An LED device comprising: a plurality of LED chips, each of said LED chips having a first surface, a second surface opposite to said first surface, and a side surface that is connected between said first surface and said second surface, and including an electrode assembly disposed on said second surface, said first surface being a light exit surface; a first encapsulating sub-layer enclosing said side surface of each of said LED chips; an electric circuit layer assembly disposed on said second surface of each of said LED chips and said first encapsulating sub-layer, said electric circuit layer assembly including a first electric circuit layer and a second electric circuit layer disposed on and in direct contact with said first electric circuit layer, said first electric circuit layer being in contact with said electrode assembly of each of said LED chips; and a second encapsulating sub-layer disposed on a portion of a top surface of said first electric circuit layer and enclosing said electric circuit layer assembly in such a manner that at least a portion of a surface of said second electric circuit layer of said electric circuit layer assembly is exposed from said second encapsulating sub-layer.

12. The LED device as claimed in claim 11 , wherein said first electric circuit layer includes a first portion in direct contact with said electrode assembly of each of said LED chips and a second portion in direct contact with said first encapsulating sub-layer.

13. The LED device as claimed in claim 11 , wherein a distance between adjacent two of said LED chips is less than 50 μm.

14. The LED device as claimed in claim 11 , wherein

said first electric circuit layer includes a plurality of first electric circuit sub-layers; and

said second electric circuit layer includes a plurality of second electric circuit sub-layers.

15. The LED device as claimed in claim 14 , wherein

said electrode assembly of each of said LED chips includes a first electrode and a second electrode, and

said first electric circuit layer defines a first surface of said electric circuit layer assembly, said first surface of said electric circuit layer assembly being electrically connected to said first electrode and said second electrode of a corresponding one of said LED chips.

16. The LED device as claimed in claim 15 , wherein one of said plurality of said first electric circuit sub-layers is electrically connected to said first electrode of said electrode assembly of each of said LED chips, and each of remainder of said plurality of said first electric circuit sub-layers is electrically connected to said second electrode of said electrode assembly of a corresponding one of said LED chips.

17. The LED device as claimed in claim 11 , wherein said second electric circuit layer of said electric circuit layer assembly defines a second surface of said electric circuit layer assembly and is disposed on said first electric circuit layer opposite to said LED chips.

18. The LED device as claimed in claim 17 , wherein said second encapsulating sub-layer covers said second electric circuit layer in such a manner that said second surface of said electric circuit layer assembly is exposed from said second encapsulating sub-layer.

19. The LED device as claimed in claim 18 , wherein an area of a projection of said first electric circuit layer on said first encapsulating sub-layer is greater than an area of a projection of said second electric circuit layer on said first encapsulating sub-layer.

20. The LED device as claimed in claim 18 , wherein a projection of said second electric circuit layer on said first encapsulating sub-layer lies within a projection of said first electric circuit layer on said first encapsulating sub-layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 20, 2026
From: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY CO., LTD.
To: HUBEI SANAN OPTOELECTRONICS CO.,LTD.
Reel/Frame 075700/0052 →
Priority Claims (1)
WO PCT/CN2019/071771 · Jan 15, 2019 · international
Continuity (3)
Continuation 17946767 · Sep 16, 2022
Continuation 16742149 · Jan 14, 2020
Related Publication 20240312973A1 · Sep 19, 2024
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Cited By (1)
US 12,557,706