LASER TRANSFER STRUCTURE AND LASER TRANSFER METHOD

1 . A laser transfer structure, comprising:

a carrier;

a release layer disposed on the carrier;

a first chip disposed on the release layer; and

a plurality of first photoresist structures disposed on the carrier and surrounding the first chip.

2 . The laser transfer structure as claimed in claim 1 , wherein one of the first photoresist structures is in contact with the first chip.

3 . The laser transfer structure as claimed in claim 1 , wherein, from a top view, there is a first contact surface between one of the first photoresist structures and a first side of the first chip, the first contact surface has a first length, and a ratio of the first length to a length of the first side of the first chip is 0.5:1 to 1:1.

4 . The laser transfer structure as claimed in claim 3 , wherein, from a top view, there is a second contact surface between one of the first photoresist structures and a second side of the first chip, the second side is perpendicular to the first side of the first chip, the second contact surface has a second length, and a ratio of the second length to a length of the second side of the first chip is 0.5:1 to 1:1.

5 . The laser transfer structure as claimed in claim 1 , wherein there is a gap between the first chip and one of the first photoresist structures.

6 . The laser transfer structure as claimed in claim 1 , wherein, from a top view, there is a first gap between one of the first photoresist structures and a first side of the first chip, and a ratio of the first gap to a length of the first side of the first chip is 0.01:10 to 1:10.

7 . The laser transfer structure as claimed in claim 6 , wherein, from a top view, there is a second gap between one of the first photoresist structures and a second side of the first chip, the second side is perpendicular to the first side of the first chip, and a ratio of the second gap to a length of the second side of the first chip is 0.01:10 to 1:10.

8 . The laser transfer structure as claimed in claim 1 , further comprising a second chip disposed on the carrier adjacent to the first chip.

9 . The laser transfer structure as claimed in claim 8 , wherein the first photoresist structures surround the second chip, and one of the first photoresist structures is in contact with the first chip and the second chip.

10 . The laser transfer structure as claimed in claim 8 , further comprising a plurality of second photoresist structures disposed on the carrier and surrounding the second chip, wherein the second photoresist structures are separate from the first photoresist structures.

11 . The laser transfer structure as claimed in claim 1 , wherein the first chip has a first surface towards the carrier and a second surface opposite to the first surface, a first height is defined as a distance between an upper surface of one of the first photoresist structures and the carrier, a second height is defined as a distance between the first surface and the carrier, a third height is defined as a distance between the second surface and the carrier, and the first height is greater than or equal to the second height.

12 . The laser transfer structure as claimed in claim 11 , wherein the first height is greater than the second height and less than the third height.

13 . A laser transfer method, comprising:

providing a first carrier with a chip and a plurality of photoresist structures surrounding the chip disposed on the first carrier;

providing a second carrier opposite to the first carrier; and

transferring the chip from the first carrier to the second carrier using laser radiation.

14 . The laser transfer method as claimed in claim 13 , wherein the laser radiation has an energy ranging from 80 mJ to 120 mJ.

15 . The laser transfer method as claimed in claim 13 , wherein there is a gap between the first carrier and the second carrier, which ranges from 70 μm to 100 μm.

16 . The laser transfer method as claimed in claim 13 , wherein one of the photoresist structures is in contact with the chip.

17 . The laser transfer method as claimed in claim 13 , wherein there is a gap between the chip and one of the photoresist structures.

18 . A method for fabricating a display module, comprising:

providing a first carrier with a first chip and a plurality of first photoresist structures surrounding the first chip disposed on the first carrier;

providing a second carrier opposite to the first carrier;

transferring the first chip from the first carrier to the second carrier using first laser radiation;

providing the first carrier with a second chip and a plurality of second photoresist structures surrounding the second chip disposed on the first carrier;

transferring the second chip from the first carrier to the second carrier using second laser radiation;

providing the first carrier with a third chip and a plurality of third photoresist structures surrounding the third chip disposed on the first carrier;

transferring the third chip from the first carrier to the second carrier using third laser radiation; and

transferring the first chip, the second chip and the third chip from the second carrier to a display panel.

19 . The method for fabricating a display module as claimed in claim 18 , wherein the first chip, the second chip and the third chip are transferred from the second carrier to the display panel at the same time.

20 . The method for fabricating a display module as claimed in claim 18 , wherein the first chip, the second chip and the third chip comprise light-emitting diodes that emit different colors of light.