Radiation detector and radiation detector array
A radiation detector includes: a scintillator including a pair of end surfaces opposing each other in a first direction and one side surface coupling the pair of end surfaces; and a semiconductor photodetector including a semiconductor substrate. A length of the scintillator in the first direction is longer than a length of the scintillator in a second direction orthogonal to the one side surface. A length of the one side surface in the first direction is longer than a width of the one side surface in a third direction orthogonal to the first direction and the second direction. The semiconductor substrate includes a photodetection region disposed in a first portion and a first electrode and a second electrode disposed in a second portion. The photodetection region includes a plurality of avalanche photodiodes arranged to operate in Geiger mode and a plurality of quenching resistors.
1 . A radiation detector comprising:
a scintillator including a pair of end surfaces opposing each other in a first direction and one side surface coupling the pair of end surfaces;
a semiconductor photodetector including a semiconductor substrate disposed to oppose the one side surface; and
a wiring member electrically connected to the semiconductor photodetector, wherein
a length of the scintillator in the first direction is longer than a length of the scintillator in a second direction orthogonal to the one side surface,
a length of the one side surface in the first direction is longer than a width of the one side surface in a third direction orthogonal to the first direction and the second direction,
the semiconductor substrate includes a first portion covered with the one side surface and a second portion exposed from the one side surface,
the first portion and the second portion are disposed in the first direction,
the semiconductor photodetector includes a photodetection region disposed in the first portion, and a first electrode and a second electrode disposed in the second portion,
the photodetection region includes a plurality of avalanche photodiodes arranged to operate in Geiger mode and a plurality of quenching resistors electrically connected in series with one of an anode or a cathode of a corresponding avalanche photodiode of the plurality of avalanche photodiodes,
the plurality of quenching resistors are connected in parallel with the first electrode,
another of the anode or the cathode of each of the plurality of avalanche photodiodes is connected in parallel with the second electrode, and
the wiring member includes a conductor electrically connected to the first electrode and a conductor connected to the second electrode.
2 . The radiation detector according to claim 1 , wherein
the scintillator has a rectangular shape or a triangular shape when viewed in the first direction.
3 . The radiation detector according to claim 1 , wherein
the pair of end surfaces includes one end surface inclined relative to the second direction.
4 . The radiation detector according to claim 1 , wherein
the pair of end surfaces includes one end surface extending in the second direction, and
the one end surface has a triangular wave shape in a cross section.
5 . The radiation detector according to claim 1 , wherein
the pair of end surfaces includes one end surface extending in the second direction, and
the one end surface includes a rough surface.
6 . The radiation detector according to claim 1 , wherein
the scintillator includes another side surface having a triangular wave shape in a cross section, and
the other side surface couples the pair of end surfaces and is adjacent to the one side surface.
7 . The radiation detector according to claim 1 , wherein
the scintillator includes another side surface that includes a rough surface, and
the other side surface couples the pair of end surfaces and is adjacent to the one side surface.
8 . The radiation detector according to claim 1 , wherein
when viewed in the second direction, the photodetection region has an outline shape corresponding to an outline shape of the one side surface.
9 . The radiation detector according to claim 1 , further comprising:
a base; and a first wire and a second wire, wherein
the base is disposed such that the semiconductor substrate is positioned between the base and the scintillator and includes a third portion covered with the semiconductor substrate and a fourth portion exposed from the semiconductor substrate,
the third portion and the fourth portion are disposed in the first direction,
the fourth portion includes a first terminal and a second terminal,
the first terminal and the second terminal and the scintillator are disposed in front of the same surface of the base, and
the first terminal is electrically connected to the first electrode by the first wire, and the second terminal is electrically connected to the second electrode by the second wire.
10 . The radiation detector according to claim 9 , further comprising
a resin covering the first wire and the second wire.
11 . The radiation detector according to claim 9 , further comprising
a light reflector, wherein
the light reflector is disposed such that the semiconductor substrate and base are positioned between the light reflector and the scintillator.
12 . The radiation detector according to claim 9 , wherein
at least a part of the wiring member and the scintillator are disposed in front of the same surface of the base.
13 . The radiation detector according to claim 1 , further comprising
a light reflector, wherein
the light reflector is disposed such that the semiconductor substrate is positioned between the light reflector and the scintillator.
14 . The radiation detector according to claim 13 , wherein
the light reflector has a thickness of 0.05 to 100 μm.
15 . The radiation detector according to claim 1 , wherein
the wiring member is disposed on the same side surface as the scintillator relative to the semiconductor substrate.
16 . The radiation detector according to claim 1 , wherein
at least a part of the wiring member and the scintillator are disposed in front of the same surface of the semiconductor substrate.
17 . The radiation detector according to claim 1 , wherein
the wiring member and the semiconductor substrate have flexibility, and
the flexibility of the wiring member is higher than the flexibility of the semiconductor substrate.
18 . A radiation detector array comprising
a plurality of radiation detectors two-dimensionally disposed in a matrix when viewed in a first direction, wherein
each of the plurality of radiation detectors is the radiation detector according to claim 1 , and
the semiconductor photodetector of one of the radiation detectors is disposed with the semiconductor photodetector of another one of the radiation detectors adjacent to the one of the radiation detectors in a direction parallel to the one side surface.
19 . The radiation detector array according to claim 18 , wherein
the semiconductor photodetectors adjacent to each other in the direction parallel to the one side surface are integrally formed with each other.
20 . A radiation detector comprising:
a scintillator including a pair of end surfaces opposing each other in a first direction, a first side surface coupling the pair of end surfaces, and a second side surface coupling the pair of end surfaces and being adjacent to the first side surface;
a first semiconductor photodetector including a first semiconductor substrate disposed to oppose the first side surface;
a second semiconductor photodetector including a second semiconductor substrate disposed to oppose the second side surface;
a first wiring member electrically connected to the first semiconductor photodetector; and
a second wiring member electrically connected to the second semiconductor photodetector, wherein
the scintillator has a rectangular shape when viewed in the first direction,
a length of the scintillator in the first direction is longer than both of a length of the scintillator in a second direction orthogonal to the first side surface and a length of the scintillator in a third direction orthogonal to the second side surface,
a length of the first side surface in the first direction is longer than a width of the first side surface in the third direction,
a length of the second side surface in the first direction is longer than a width of the second side surface in the second direction,
each of the first semiconductor substrate and the second semiconductor substrate includes a first portion covered with a corresponding side surface of the first side surface and the second side surface and a second portion exposed from the corresponding side surface,
the first portion and the second portion are disposed in the first direction,
each of the first semiconductor photodetector and the second semiconductor photodetector includes a photodetection region disposed in the first portion, and a first electrode and a second electrode disposed in the second portion,
each of the photodetection regions includes a plurality of avalanche photodiodes arranged to operate in Geiger mode and a plurality of quenching resistors electrically connected in series with one of an anode or a cathode of a corresponding avalanche photodiode of the plurality of avalanche photodiodes,
the plurality of quenching resistors are connected in parallel with the first electrode,
another of the anode or the cathode of each of the plurality of avalanche photodiodes is electrically connected in parallel with the second electrode, and
each of the first wiring member and the second wiring member includes a conductor electrically connected to the first electrode and a conductor connected to the second electrode.
21 . The radiation detector according to claim 20 , wherein
the pair of end surfaces includes one end surface inclined relative to the second direction.
22 . The radiation detector according to claim 20 , wherein
the pair of end surfaces includes one end surface extending in the second direction, and
the one end surface has a triangular wave shape in a cross section.
23 . The radiation detector according to claim 20 , wherein
the pair of end surfaces includes one end surface extending in the second direction, and
the one end surface includes a rough surface.
24 . The radiation detector according to claim 20 , wherein
when viewed in the second direction, the photodetection region of the first semiconductor substrate has an outline shape corresponding to an outline shape of the first side surface, and
when viewed in the third direction, the photodetection region of the second semiconductor substrate has an outline shape corresponding to an outline shape of the second side surface.
25 . The radiation detector according to claim 20 , further comprising:
a first base and a second base; and a first wire and a second wire, wherein
the first base is disposed such that the first semiconductor substrate is positioned between the first base and the scintillator,
the second base is disposed such that the second semiconductor substrate is positioned between the second base and the scintillator,
the first base includes a third portion covered with the first semiconductor substrate and a fourth portion exposed from the first semiconductor substrate, and the second base includes a third portion covered with the second semiconductor substrate and a fourth portion exposed from the second semiconductor substrate,
the third portion and the fourth portion are disposed in the first direction,
each of the fourth portions includes a first terminal and a second terminal,
the first terminal and the scintillator are disposed in front of the same surface of the first base, and the second terminal and the scintillator are disposed in front of the same surface of the second base, and
the first terminal is electrically connected to the first electrode by the first wire, and the second terminal is electrically connected to the second electrode by the second wire.
26 . The radiation detector according to claim 25 , further comprising
a resin covering the first wire and the second wire.
27 . The radiation detector according to claim 25 , further comprising:
a first light reflector; and a second light reflector, wherein
the first light reflector is disposed such that the first semiconductor substrate and the first base are positioned between the first light reflector and the scintillator, and
the second light reflector is disposed such that the second semiconductor substrate and the second base are positioned between the second light reflector and the scintillator.
28 . The radiation detector according to claim 25 , wherein
at least a part of the first wiring member and the scintillator are disposed in front of the same surface of the first base, and
at least a part of the second wiring member and the scintillator are disposed in front of the same surface of the second base.
29 . The radiation detector according to claim 20 , further comprising:
a first light reflector; and a second light reflector, wherein
the first light reflector is disposed such that the first semiconductor substrate is positioned between the first light reflector and the scintillator, and
the second light reflector is disposed such that the second semiconductor substrate is positioned between the second light reflector and the scintillator.
30 . The radiation detector according to claim 29 , wherein
the first light reflector and the second light reflector have a thickness of 0.05 to 100 μm.
31 . The radiation detector according to claim 20 , wherein
the first wiring member is disposed on the same side surface as the scintillator relative to the first semiconductor substrate, and
the second wiring member is disposed on the same side surface as the scintillator relative to the second semiconductor substrate.
32 . The radiation detector according to claim 20 , wherein
at least a part of the first wiring member and the scintillator are disposed in front of the same surface of the first semiconductor substrate, and
at least a part of the second wiring member and the scintillator are disposed in front of the same surface of the second semiconductor substrate.
33 . The radiation detector according to claim 20 , wherein
the first wiring member, the second wiring member, the first semiconductor substrate, and the second semiconductor substrate have flexibility,
the flexibility of the first wiring member is higher than the flexibility of the first semiconductor substrate, and
the flexibility of the second wiring member is higher than the flexibility of the second semiconductor substrate.
34 . A radiation detector array comprising
a plurality of radiation detectors two-dimensionally disposed in a matrix when viewed in a first direction, wherein
each of the plurality of radiation detectors is the radiation detector according to claim 20 ,
the first semiconductor photodetector of one of the radiation detectors is disposed with the first semiconductor photodetector of another one of the radiation detectors adjacent in the third direction, and
the second semiconductor photodetector of the one radiation detector is disposed with the second semiconductor photodetector of the other one of the radiation detectors adjacent in the second direction.
35 . The radiation detector array according to claim 34 , wherein
the first semiconductor photodetectors adjacent to each other in the third direction are integrally formed with each other.
36 . The radiation detector array according to claim 34 , wherein
the second semiconductor photodetectors adjacent to each other in the second direction are integrally formed with each other.