CHARGED PARTICLE BEAM DEVICE AND METHOD FOR CONTROLLING CHARGED PARTICLE BEAM DEVICE
This charged particle beam device, which is for etching a sample, comprises: a charged particle beam-emitting optical system that emits a charged particle beam; a sample stage that holds a sample; a drive mechanism that drives the sample stage; a gas supply unit that supplies etching gas to the surface of the sample; and a computer that sets a processing region of the sample and controls the charged particle beam-emitting optical system and the drive mechanism so as to irradiate the set processing region with the charged particle beam and etch the sample. The computer sets a processing region on the sample that differs for each scan. The computer sets a different processing region for each scan on the sample.
1 . A charged particle beam device performing deposition processing or etching processing on a sample, the charged particle beam device comprising:
a charged particle beam-emitting optical system that emits a charged particle beam;
a sample stage that holds a sample;
a drive mechanism that drives the sample stage;
a gas supply unit that supplies etching gas to a surface of the sample; and
a computer that sets a processing region of the sample and controls the charged particle beam-emitting optical system and the drive mechanism so that the processing region that is set is irradiated with a charged particle beam to perform etching processing of the sample,
wherein the computer sets a different processing region for each scan for the sample.
2 . The charged particle beam device according to claim 1 , wherein the computer sets a location to be irradiated with a charged particle beam as the processing region based on a diameter or current density distribution of the charged particle beam emitted by the charged particle beam-emitting optical system.
3 . The charged particle beam device according to claim 2 , wherein the computer sets a location to be irradiated with a charged particle beam as the processing region based on acceleration voltage which the charged particle beam-emitting optical system applies to charged particles.
4 . The charged particle beam device according to claim 1 , wherein the computer sets a location to be irradiated with a charged particle beam as the processing region based on whether a charged particle of the charged particle beam-emitting optical system is an electron, ion, or ionic species.
5 . The charged particle beam device according to claim 1 , wherein the computer sets a plurality of first irradiation locations spaced at a predetermined interval on the sample as the processing regions for performing deposition processing or etching processing and sets one or more second irradiation locations between the first irradiation locations that are adjacent.
6 . The charged particle beam device according to claim 1 , wherein the computer sets a different processing region for each scan in two orthogonal directions on the sample as the processing region for deposition processing or etching processing.
7 . A method of controlling a charged particle beam device that performs deposition processing or etching processing on a sample and comprises a charged particle beam-emitting optical system that irradiates a charged particle beam, a sample stage that holds a sample, a drive mechanism that drives the sample stage, a gas supply unit that supplies etching gas to a surface of the sample, and a computer that sets a processing region of the sample, the method comprising:
setting a different processing region for each scan for the sample with the computer; and
controlling the charged particle beam-emitting optical system and the drive mechanism with the computer so as to irradiate the processing region with a charged particle beam to perform etching processing of the sample.
8 . The charged particle beam device according to claim 3 , wherein the computer sets a location to be irradiated with a charged particle beam as the processing region based on whether a charged particle of the charged particle beam-emitting optical system is an electron, ion, or ionic species.