CHARGED PARTICLE BEAM DEVICE AND METHOD FOR CONTROLLING CHARGED PARTICLE BEAM DEVICE
This charged particle beam device, which is for processing a sample, comprises: a charged particle beam-emitting optical system that emits a charged particle beam; a sample stage that holds a sample; a drive mechanism that drives the sample stage; and a computer that sets a cross-section of the sample in a processing region of the sample and controls the charged particle beam-emitting optical system and the drive mechanism when slicing the set processing region. The computer sets an irradiation location in a position where each of a plurality of emitted charged particle beams overlap one another in a first direction of the sample processing region when slicing the processing region.
1 . A charged particle beam device for processing a sample, the charged particle beam device comprising:
a charged particle beam-emitting optical system that emits a charged particle beam;
a sample stage that holds a sample;
a drive mechanism that drives the sample stage; and
a computer that sets a cross section of the sample in a processing region of the sample and controls the charged particle beam-emitting optical system and the drive mechanism when the processing region is sliced,
wherein the computer sets an irradiation location to a location where a plurality of charged particle beams emitted in a first direction of the processing region overlap one another when the processing region of the sample is sliced.
2 . The charged particle beam device according to claim 1 , wherein the computer sets a spacing between each of the plurality of charged particle beams emitted in the first direction to be more than or equal to 50% and less than or equal to 90% of diameter of the charged particle beam.
3 . The charged particle beam device according to claim 1 , wherein the computer sets the irradiation location to at a location where a plurality of charged particle beams emitted in a second direction orthogonal to the first direction overlap one another when the processing region of the sample is sliced.
4 . The charged particle beam device according to claim 3 , wherein the computer sets a spacing between each of the plurality of charged particle beams emitted in the second direction to be more than or equal to 50% and less than or equal to 90% of diameter of the charged particle beam.
5 . The charged particle beam device according to claim 1 , wherein the computer sets a processing depth for each of the plurality of charged particle beams emitted in the first direction to be a desired processing depth multiplied by a number that is more than or equal to Tan 30° and less than or equal to Tan 89.8° of a beam radius.
6 . A method for controlling a charged particle beam device comprising a charged particle beam-emitting optical system that emits a charged particle beam, a sample stage that holds a sample, a drive mechanism that drives the sample stage, and a computer that sets a cross section of the sample in a processing region of the sample and controls the charged particle beam-emitting optical system and the drive mechanism when the processing region that is set is sliced, the method comprising:
setting an irradiation location with the computer at a location where a plurality of charged particle beams emitted in a first direction of the processing region overlap one another when the processing region of the sample is sliced; and
controlling the charged particle beam-emitting optical system and the drive mechanism with the computer so as to slice the sample by irradiating the irradiation location that is set with the charged particle beam.
7 . The charged particle beam device according to claim 2 , wherein the computer sets the irradiation location to at a location where a plurality of charged particle beams emitted in a second direction orthogonal to the first direction overlap one another when the processing region of the sample is sliced.
8 . The charged particle beam device according to claim 7 , wherein the computer sets a spacing between each of the plurality of charged particle beams emitted in the second direction to be more than or equal to 50% and less than or equal to 90% of diameter of the charged particle beam.