METHODS OF DEPOSITING MATERIALS ONTO 2-DIMENSIONAL LAYERED MATERIALS
A method for plasma deposition of materials onto a 2-dimensional layer of a first substrate, the method comprising: depositing a protective layer directly onto the 2-dimensional layer in a pulsed plasma deposition process; and depositing a second layer onto the protective layer in a second plasma deposition process.
1 . A method for plasma deposition of materials onto a 2-dimensional layer of a first substrate, the method comprising:
depositing a protective layer directly onto the 2-dimensional layer in a pulsed plasma deposition process; and
depositing a second layer onto the protective layer in a second plasma deposition process.
2 . A method of plasma deposition according to claim 1 , wherein the 2-dimensional layer comprises graphene.
3 . A method of plasma deposition according to claim 1 , wherein the protective layer comprises a dielectric.
4 . A method of plasma deposition according to claim 1 , wherein the protective layer comprises a metal or semiconductor nitride; a metal or semiconductor carbide; or a metal or semiconductor carbonitride.
5 . A method of plasma deposition according to claim 1 , wherein the pulsed plasma deposition process comprises a plasma enhanced atomic layer deposition process or a pulsed plasma enhanced chemical vapour deposition process.
6 . A method of plasma deposition according to claim 5 , wherein the step of depositing a protective layer directly onto the substrate in a plasma enhanced atomic layer deposition process comprises using a low energy plasma.
7 . A method of plasma deposition according to claim 1 , wherein the second plasma deposition process comprises a pulsed plasma deposition process.
8 . A method of plasma deposition according to claim 7 , wherein the second plasma deposition process comprises a plasma enhanced atomic layer deposition process or a pulsed plasma enhanced chemical vapour deposition process.
9 . A method of plasma deposition according to claim 7 , wherein the second layer comprises a dielectric.
10 . A method of plasma deposition according to claim 3 , wherein the protective layer and/or the second layer each have a dielectric constant greater than 3.
11 . A method of plasma deposition according to claim 1 , wherein the protective layer and the second layer are formed from different materials.
12 . A method of plasma deposition according to claim 1 , wherein the step of depositing a protective layer is carried out in a first deposition chamber and the method further comprises, prior to the step of depositing a protective layer, depositing a protective layer onto a second substrate in the first deposition chamber, removing the second substrate from the first deposition chamber, and providing the first substrate in the first deposition chamber.
13 . A method of plasma deposition according to claim 1 , wherein the step of depositing a second layer is carried out in a second deposition chamber and the method further comprises, prior to the step of depositing a second layer, depositing a third layer onto a third substrate in the second deposition chamber, removing the second substrate from the second deposition chamber, and providing the first substrate in the second deposition chamber.
14 . A method of plasma deposition according to claim 12 , wherein the first deposition chamber is the second deposition chamber.
15 . A method for deposition of materials onto a 2-dimensional layer of a first substrate, the method comprising:
depositing a protective layer directly onto the 2-dimensional layer in a radical enhanced atomic layer deposition process; and
depositing a second layer onto the protective layer in a second deposition process.
16 . A method of deposition according to claim 15 , wherein the radical enhanced atomic layer deposition process is a hot wire assisted atomic layer deposition process.
17 . A method of plasma deposition according to claim 9 , wherein the protective layer and/or the second layer each have a dielectric constant greater than 3.
18 . A method of plasma deposition according to claim 2 , wherein the protective layer and the second layer are formed from different materials.
19 . A method of plasma deposition according to claim 2 , wherein the protective layer comprises a dielectric.
20 . A method of plasma deposition according to claim 13 , wherein the first deposition chamber is the second deposition chamber.