PHASE SHIFT MASK AND METHOD FOR MANUFACTURING PHASE SHIFT MASK
There are provided a phase shift mask having a small number of haze defects, that is, a phase shift mask capable of sufficiently suppressing occurrence of haze, and a method for manufacturing the phase shift mask. A phase shift mask ( 100 ) according to the present embodiment includes a substrate ( 11 ), a phase shift film ( 12 ) that is formed on the substrate ( 11 ) and has a circuit pattern, and a protective film ( 13 ) that is formed on an upper surface ( 12 t ) and a side surface ( 12 s ) of the phase shift film ( 12 ), in which the phase shift film ( 12 ) enables adjustment of each of phase and transmittance with respect to exposure light to be transmitted to a predetermined extent, the protective film ( 13 ) contains at least one selected from a tantalum metal, a tantalum compound, a tungsten metal, a tungsten compound, a tellurium metal, or a tellurium compound, and when a film thickness of the phase shift film ( 12 ) is denoted by d 1 and a film thickness of the protective film ( 13 ) is denoted by d 2 , d 2 is thinner than d 1 , and d 2 is 15 nm or less.
1 . A phase shift mask having a circuit pattern by application of exposure light having a wavelength of 200 nm or less, the phase shift mask comprising:
a transparent substrate;
a phase shift film that is formed on the transparent substrate and has a circuit pattern; and
a gas permeation protective film that is formed on an upper surface and a side surface of the phase shift film,
wherein the phase shift film enables adjustment of each of phase and transmittance with respect to the exposure light to be transmitted to a predetermined extent,
the gas permeation protective film contains at least one selected from a tantalum metal, a tantalum compound, a tungsten metal, a tungsten compound, a tellurium metal, and a tellurium compound, and
when a film thickness of the phase shift film is denoted by d 1 and a film thickness of the gas permeation protective film is denoted by d 2 , d 2 is thinner than d 1 , and d 2 is 15 nm or less.
2 . The phase shift mask according to claim 1 ,
wherein the phase shift film has resistance to oxygen-containing chlorine-based etching and is etchable by fluorine-based etching.
3 . The phase shift mask according to claim 1 or 2 ,
wherein the phase shift film contains silicon and contains at least one selected from a transition metal, nitrogen, oxygen, and carbon, and
the transition metal is at least one selected from molybdenum, titanium, vanadium, cobalt, nickel, zirconium, niobium, or hafnium.
4 . The phase shift mask according to claim 1 ,
wherein the tantalum compound contains tantalum and at least one selected from oxygen, nitrogen, or carbon.
5 . The phase shift mask according to claim 1 ,
wherein the tungsten compound contains tungsten and at least one selected from oxygen, nitrogen, or carbon.
6 . The phase shift mask according to claim 1 ,
wherein the tellurium compound contains tellurium and at least one selected from oxygen, nitrogen, or carbon.
7 . The phase shift mask according to claim 1 ,
wherein, the phase shift film and the gas permeation protective film are etchable by electron beam correction etching using a fluorine-based gas.
8 . The phase shift mask according to claim 1 ,
wherein the gas permeation protective film is also formed on the transparent substrate.
9 . A method for manufacturing the phase shift mask according to claim 1 , the method comprising:
forming a phase shift film on the transparent substrate;
forming a light shielding film on the phase shift film;
forming a resist pattern on the light shielding film formed on the phase shift film;
forming a pattern on the light shielding film by oxygen-containing chlorine-based etching after forming the resist pattern;
forming a pattern on the phase shift film by fluorine-based etching after forming the pattern on the light shielding film;
removing the resist pattern after forming the pattern on the phase shift film;
removing the light shielding film from the phase shift film on which the pattern is formed by oxygen-containing chlorine-based etching after removing the resist pattern;
forming the gas permeation protective film on an upper surface and a side surface of the phase shift film on which the pattern is formed after removing the light shielding film; and
performing a defect inspection after forming the gas permeation protective film,
when a defect is detected in the defect inspection, the phase shift film and the gas permeation protective film at a defective portion are subjected to electron beam correction etching using a fluorine-based gas.
10 . The method for manufacturing the phase shift mask according to claim 9 ,
wherein, in the forming of the gas permeation protective film, the gas permeation protective film is also formed on the exposed transparent substrate.
11 . The phase shift mask according to claim 2 ,
wherein the phase shift film contains silicon and contains at least one selected from a transition metal, nitrogen, oxygen, and carbon, and
the transition metal is at least one selected from molybdenum, titanium, vanadium, cobalt, nickel, zirconium, niobium, or hafnium.
12 . The phase shift mask according to claim 2 ,
wherein the tantalum compound contains tantalum and at least one selected from oxygen, nitrogen, or carbon.
13 . The phase shift mask according to claim 3 ,
wherein the tantalum compound contains tantalum and at least one selected from oxygen, nitrogen, or carbon.
14 . The phase shift mask according to claim 2 ,
wherein the tungsten compound contains tungsten and at least one selected from oxygen, nitrogen, or carbon.
15 . The phase shift mask according to claim 3 ,
wherein the tungsten compound contains tungsten and at least one selected from oxygen, nitrogen, or carbon.
16 . The phase shift mask according to claim 2 ,
wherein the tellurium compound contains tellurium and at least one selected from oxygen, nitrogen, or carbon.
17 . The phase shift mask according to claim 3 ,
wherein the tellurium compound contains tellurium and at least one selected from oxygen, nitrogen, or carbon.
18 . The phase shift mask according to claim 2 ,
wherein, the phase shift film and the gas permeation protective film are etchable by electron beam correction etching using a fluorine-based gas.
19 . The phase shift mask according to claim 3 ,
wherein, the phase shift film and the gas permeation protective film are etchable by electron beam correction etching using a fluorine-based gas.
20 . The phase shift mask according to claim 4 ,
wherein, the phase shift film and the gas permeation protective film are etchable by electron beam correction etching using a fluorine-based gas.