WAFER WITH MICRO INTEGRATED CIRCUITS
A wafer with micro integrated circuits includes a transparent substrate and a plurality of micro components. The micro components are each attached to the transparent substrate by a plurality of transparent adhesive layers. Each of the micro components includes a bonding pad in direct contact with the transparent adhesive layer and an etching stop layer located on the side of the micro components opposite from the bonding pad.
1 . A wafer with micro integrated circuits, comprising:
a transparent substrate; and
a plurality of micro components, wherein the micro components are each attached to the transparent substrate by a plurality of transparent adhesive layers,
wherein each of the micro components comprises:
a bonding pad in direct contact with the transparent adhesive layer; and
an etching stop layer located on a side of the micro components opposite from the bonding pad.
2 . The wafer with micro integrated circuits as claimed in claim 1 , wherein the micro components further comprise:
a circuit layer between the etching stop layer and the bonding pad.
3 . The wafer with micro integrated circuits as claimed in claim 2 , wherein, in a cross-sectional view, the circuit layer is a tapered structure with a long side and a short side opposite to each other, and wherein the short side of the tapered structure corresponds to a side of the circuit layer near the bonding pad, and the long side of the tapered structure corresponds to a side of the circuit layer near the etching stop layer.
4 . The wafer with micro integrated circuits as claimed in claim 3 , wherein an angle between the long side of the tapered structure and a sidewall of the tapered structure between the long side and the short side is from 45 degrees to 90 degrees.
5 . The wafer with micro integrated circuits as claimed in claim 2 , wherein the circuit layer comprises at least three sets of driver circuits.
6 . The wafer with micro integrated circuits as claimed in claim 2 , wherein the circuit layer comprises an active circuit element or a passive circuit element.
7 . The wafer with micro integrated circuits as claimed in claim 2 , wherein a material of the circuit layer comprises silicon, gallium arsenide, or a combination thereof.
8 . The wafer with micro integrated circuits as claimed in claim 1 , wherein a thickness of one of the micro components is less than 30 μm.
9 . The wafer with micro integrated circuits as claimed in claim 1 , wherein a material of the etching stop layer comprises silicon nitride, silicon carbide, or a combination thereof.
10 . The wafer with micro integrated circuits as claimed in claim 1 , wherein a material of the transparent substrate comprises glass, aluminum oxide, or a sapphire substrate.
11 . The wafer with micro integrated circuits as claimed in claim 1 , wherein the transparent adhesive layer comprises a laser dissociative material.
12 . The wafer with micro integrated circuits as claimed in claim 1 , wherein a material of the transparent adhesive layer comprises polyimide (PI), epoxy, silicone, polydimethylsiloxane (PDMS), or polymethylmethacrylate (PMMA).
13 . The wafer with micro integrated circuits as claimed in claim 1 , wherein a distance between the two adjacent micro components is from 0.5 μm to 100 μm.
14 . The wafer with micro integrated circuits as claimed in claim 1 , wherein a thickness of the transparent substrate is from 50 μm to 2 mm.
15 . The wafer with micro integrated circuits as claimed in claim 1 , wherein a material of the bonding pad comprises Al, Cu, Au, TiN, Ti, Pt, Cr, Ni, Pd, or a combination thereof.
16 . The wafer with micro integrated circuits as claimed in claim 1 , wherein a thickness of the transparent adhesive layers is from 0.5 μm to 50 μm.
17 . The wafer with micro integrated circuits as claimed in claim 1 , wherein the micro components are transferred to a carrier by laser dissociation of the transparent adhesive layers.
18 . The wafer with micro integrated circuits as claimed in claim 17 , wherein the micro components are secured to the carrier by an adhesive layer on the carrier.
19 . A semiconductor device with micro integrated circuit, comprising:
a carrier with four electrodes;
three light-emitting diodes disposed on the carrier;
a micro component disposed on the carrier, the micro component has a trapezoidal shape in a cross-sectional view; and
a dielectric layer encapsulating a side surface of the micro component;
wherein the micro component has seven electrodes,
wherein four of the seven electrodes are input terminals, and the four of the seven electrodes are electrically connected to the four electrodes respectively, and
wherein the other three of the seven electrodes are output terminals, and the other three of the seven electrodes are electrically connected to the three light-emitting diodes, respectively.