SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes first channel layers disposed over a substrate, a first source/drain region disposed over the substrate, a gate dielectric layer disposed on and wrapping each of the first channel layers, a gate electrode layer disposed on the gate dielectric layer and wrapping each of the first channel layers, and a liner semiconductor layer disposed between the first channel layers and the first source/drain region.
1 . A semiconductor device, comprising:
first channel layers disposed over a bottom fin structure protruding from a substrate;
a gate dielectric layer disposed on and wrapping each of the first channel layers;
a gate electrode layer disposed on the gate dielectric layer;
a source/drain epitaxial layer; and
a semiconductor layer disposed between the first channel layers and the source/drain epitaxial layer, wherein:
the semiconductor layer is in direct contact with vertical end faces of the first channel layers, and
the semiconductor layer includes first portions disposed between adjacent first channel layers in a vertical direction and a second portion connecting the first portions.