METHOD OF ELECTROPLATING STRESS-FREE COPPER FILM
A method of electroplating a stress-free copper film on a substrate includes: providing the substrate; providing an electroplating bath that includes a copper salt, an acid, a leveler, a chlorine compound, an accelerator, a suppressor; and water; heating the electroplating bath to 25 to 60° C.; and electroplating the substrate in the electroplating bath to form the stress-free copper film while maintaining the electroplating bath at 25 to 60° C. The leveler is an organic compound containing an amine group. The method further includes annealing the stress-free copper film at 60-260° C. for 0.5 to 2 hours, or at 60-120° C. for 0.5 to 2 hours. A stress-free electroplated copper film is also disclosed.
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10 . A stress-free electroplated copper film comprising:
a thickness of 2 to 200 μm;
a first internal stress of about −0.08 to 0.20 MPa, the first internal stress being measured within 1 hour after electroplating the stress-free electroplated copper film on a substrate;
a second internal stress of about 0.08 to 0.12 MPa, the second internal stress being measured 24 hours after electroplating or annealed at 60 to 120° C. for 0.5 to 2 hours;
an impurity of 20 to 120 ppm; and
an X-ray powder diffraction pattern having an I (111):I(200):I(220) intensity ratio of about 100:9.5:3.7 or 27:2.5:1.
11 . The stress-free electroplated copper film of claim 10 , further comprising:
a third internal stress of about 0.08 to 0.12 MPa, the third internal stress being measured 72 hours after electroplating or annealing.
12 . A stress-free electroplated copper film comprising:
a thickness of 2 to 200 μm;
a first internal stress of about −4.0 to 4.0 MPa, the first internal stress being measured within 1 hour after electroplating the stress-free electroplated copper film on a substrate;
a second internal stress of about 0.08 to 0.12 MPa, the second internal stress being measured after electroplating and annealed at 60-120° C. for 0.5 to 2 hours;
an impurity of 1 to 4 ppm; and
an X-ray powder diffraction pattern having an I (111):I(200):I(220) intensity ratio of about 100:7:7 or 14.3:1:1.
13 . The stress-free electroplated copper film of claim 12 , further comprising:
a third internal stress of about 0.08 to 0.12 MPa, the third internal stress being measured 72 hours after annealing.
14 . The stress-free electroplated copper film of claim 10 , wherein the impurity comprises carbon, oxygen, nitrogen, sulfur, and chlorine.
15 . The stress-free electroplated copper film of claim 10 , wherein the thickness of the stress-free electroplated copper film is 10 to 50 μm.
16 . The stress-free electroplated copper film of claim 10 , wherein the stress-free electroplated copper film has a resistivity of 1.70 to 2.20 μOhM·cm.
17 . The stress-free electroplated copper film of claim 12 , wherein the impurity comprises carbon, oxygen, nitrogen, sulfur, and chlorine.
18 . The stress-free electroplated copper film of claim 12 , wherein the thickness of the stress-free electroplated copper film is 10 to 50 μm.
19 . The stress-free electroplated copper film of claim 12 , wherein the stress-free electroplated copper film has a resistivity of 1.70 to 2.20 μOhM·cm.