Display device
According to one embodiment, a display device includes a first inorganic insulating film covering an oxide semiconductor layer and a protective metal layer, a second inorganic insulating film covering a gate electrode, a first connection electrode in contact with the protective metal layer at a first opening portion which penetrates through the first inorganic insulating film and the second inorganic insulating film, a first organic insulating film covering the first connection electrode, and a second connection electrode in contact with the first connection electrode at a second opening portion which penetrates through the first organic insulating film, wherein the second opening portion is located above the first opening portion.
1 . A semiconductor device comprising:
an insulating substrate;
an oxide semiconductor layer arranged on the insulating substrate;
a first inorganic insulating film covering the oxide semiconductor layer;
a gate electrode provided on the first inorganic insulating film, wherein
a second inorganic insulating film is provided on the first inorganic insulating film, and covers the gate electrode,
a first opening penetrates through the first inorganic insulating film and the second inorganic insulating film,
a first organic insulating film is provided on the second inorganic insulating film,
a second opening penetrates through the first organic insulating film and overlaps the first opening in plan view,
a second organic insulating film is provided on the first organic insulating film,
a third opening penetrates through the second organic insulating film,
a third inorganic insulating film is provided on the second organic insulating film,
a fourth opening penetrates through the third inorganic insulating film, and overlaps the third opening in plan view,
a first electrode arranged between the second inorganic insulating film and the first organic insulating film,
a second electrode arranged between the first organic insulating film and the second organic insulating film,
a third electrode arranged between the second organic insulating film and the third inorganic insulating film, and
a fourth electrode arranged on the third inorganic insulating film, wherein
the first electrode is connected to the second electrode in a first area overlapping the first opening and the second opening,
the third electrode is connected to the second electrode in a second area overlapping the third opening and the fourth opening, and
the second area is disposed offset from the first area in plan view.
2 . The semiconductor device of claim 1 , wherein
an entire periphery of a first edge that defines the first opening is located on an inner side of a second edge that defines the second opening in plan view.
3 . The semiconductor device of claim 1 , wherein
the second organic insulating film is thinner than the first organic insulating film.
4 . The semiconductor device of claim 1 , wherein
the third opening is located between the gate electrode and the second opening in plan view.
5 . The semiconductor device of claim 1 , wherein
an entire periphery of a third edge that defines the third opening is located on an inner side of a fourth edge that defines the fourth opening in plan view.
6 . The semiconductor device of claim 1 , wherein
the fourth opening overlaps the second opening in plan view.
7 . The semiconductor device of claim 1 , wherein
the first electrode is electrically connected to the oxide semiconductor layer in the first opening.
8 . The semiconductor device of claim 1 , wherein
the third electrode is connected to the fourth electrode in the fourth opening.
9 . The semiconductor device of claim 1 , wherein
each of the first electrode and the second electrode is a stacked layer body in which a plurality of metal layers are stacked.
10 . The semiconductor device of claim 1 , wherein
each of the third electrode and the fourth electrode is a transparent electrode.