Max and MXene using vanadium carbide and method for manufacturing same
The present disclosure provides Max and MXene using low-cost vanadium carbide instead of an expensive vanadium metal, and a method for preparing same.
1. Max using vanadium carbide,
wherein the Max consists of vanadium carbide of vanadium, aluminum, and carbon,
wherein the Max is used as a raw material for MXene, which is a two-dimensional nanomaterial,
wherein the Max is at least one selected from compounds represented by the following formulae 1 to 3, and
wherein the carbon content is 8 to 14 wt %:
V 2 AlC [Formula 1]
V 4 AlC 3 [Formula 2]
V 12 Al 3 C 8 . [Formula 3]
2. The Max using vanadium carbide according to claim 1 ,
wherein the Max using vanadium carbide is formed by subjecting a mixture of vanadium carbide and aluminum to heat-treatment under an inert gas.
3. The Max using vanadium carbide according to claim 1 ,
wherein the vanadium carbide is formed by refining vanadium oxide and a carbon compound, followed by mixing, to prepare a mixture of the vanadium oxide and the carbon compound, and subjecting the mixture to heat-treatment under vacuum and normal pressure.
4. The Max using vanadium carbide according to claim 1 ,
wherein the vanadium carbide has a molar ratio of vanadium to carbon of 2:1, 3:2, or 4:3.
5. The Max using vanadium carbide according to claim 1 ,
wherein the Max using vanadium carbide excludes the use of a vanadium metal.
6. The Max using vanadium carbide according to claim 1 ,
wherein oxygen content in the Max using vanadium carbide is 1,000 to 5,000 ppm.
7. MXene using vanadium carbide,
wherein the MXene using vanadium carbide is a two-dimensional nanomaterial having a carbon content of 10.5 to 15 wt % formed by subjecting the Max using vanadium carbide of claim 1 to aluminum etching and interlayer peeling.
8. The MXene using vanadium carbide according to claim 7 ,
wherein the MXene using vanadium carbide is at least one selected from compounds represented by the following formulae 4 to 6:
V 2 C [Formula 4]
V 4 C 3 [Formula 5]
V 3 C 2 . [Formula 6]
9. A method for preparing Max using vanadium carbide, comprising:
(a-1) mixing vanadium oxide and a carbon compound to form a mixed powder and refining the particle size through high-energy milling using a high-energy milling device, followed by carbonation-reduction reaction by vacuum heat-treatment, to prepare vanadium carbide; and
(a-2) adding aluminum to the vanadium carbide, followed by heat-treatment under an inert gas, to prepare Max using vanadium carbide of claim 1 .
10. The method for preparing Max using vanadium carbide according to claim 9 ,
wherein the particle size of the mixed powder of the vanadium oxide and the carbon compound is 2 nm to 50 μm.
11. The method for preparing Max using vanadium carbide according to claim 9 ,
the high-energy milling is performed by
mixing the vanadium oxide and the carbon compound, adding the mixed powder together with a steel ball into a rotating container in a high-energy milling device,
subjecting the mixture to a carbonation-reduction reaction in an atmosphere of air, vacuum, nitrogen, or argon, and
refining the vanadium oxide and carbon compound through high-energy milling, to increase the contact area and carbonation-reduction reaction rate.
12. A method for preparing MXene using vanadium carbide, comprising:
(b-1) mixing vanadium oxide and a carbon compound to form a mixed powder and refining the particle size through high-energy milling using a high-energy milling device, followed by carbonation-reduction reaction by vacuum heat-treatment, to prepare vanadium carbide;
(b-2) adding aluminum to the vanadium carbide, followed by heat-treatment under an inert gas, to prepare Max using vanadium carbide; and
(b-3) subjecting the Max using vanadium carbide to aluminum etching and interlayer peeling, to prepare MXene using vanadium carbide of claim 7 .
13. The method for preparing MXene using vanadium carbide according to claim 12 ,
wherein, in the step of (b-3) subjecting the Max using vanadium carbide to aluminum etching and interlayer peeling, to prepare MXene using vanadium carbide, the aluminum etching is performed using at least one selected from hydrofluoric acid (HF), lithium fluoride (LiF), sodium fluoride (NaF), magnesium fluoride (MgF 2 ), or a combination thereof, or a combination of these with at least one of hydrochloric acid, sulfuric acid and nitric acid.