Key storage device and method for writing key value into one-time-programmable device
A key storage device and a method for writing a key value into an one-time-programmable (OTP) device are provided. The key storage device includes an energy harvester, a controller, a hardware key device and the OTP device. The energy harvester is configured to collect energy particles during a fabrication process of a wafer which includes the key storage device, in order to generate a regular voltage. The controller is configured to enable a key transfer procedure when the regular voltage reaches a predetermine level. The hardware key device is configured to provide a pre-existing key value. The controller reads the pre-existing key value from the hardware key device, and writes a key value into the OTP device according to the pre-existing key value. After the OTP device stores the key value, the controller erases the pre-existing key value within the hardware key device.
1 . A key storage device, comprising:
an energy harvester, configured to collect energy particles during a fabrication process of a wafer which comprises the key storage device, in order to generate a regular voltage;
a controller, coupled to the energy harvester, configured to enable a key transfer procedure when the regular voltage reaches a predetermine level;
a hardware key device, coupled to the controller, configured to provide a pre-existing key value;
an one-time-programmable (OTP) device, coupled to the controller;
wherein:
the controller reads the pre-existing key value from the hardware key device, and writes a key value into the OTP device according to the pre-existing key value; and
after the OTP device stores the key value, the controller erases the pre-existing key value within the hardware key device.
2 . The key storage device of claim 1 , wherein the key storage device is implemented on previously fabricated metal layers, the energy particles collected by the energy harvester are configured for fabrication of at least one subsequently fabricated metal layer, and the previously fabricated metal layers are fabricated before the at least one subsequently fabricated metal layer.
3 . The key storage device of claim 1 , further comprising:
a boosted voltage generator, configured to generate a boosted voltage according to the regular voltage when the controller enable the key transfer procedure.
4 . The key storage device of claim 3 , wherein the controller writes the key value into the OTP device with aid of the boosted voltage.
5 . The key storage device of claim 3 , wherein the controller erases the pre-existing key value within the hardware key device with aid of the boosted voltage.
6 . The key storage device of claim 3 , wherein the boosted voltage comprises a first boosted voltage and a second boosted voltage, and the controller writes the key value into the OTP device with aid of the first boosted voltage and erases the pre-existing key value within the hardware key device with aid of the second boosted voltage.
7 . The key storage device of claim 1 , wherein the controller erases the pre-existing key value within the hardware key device by programming all cells of the hardware key device to be a same logic value.
8 . The key storage device of claim 1 , wherein each of cells of the hardware key device is either in an initial state or in a final state, each cell in the final state is unable to be reversed to the initial state, and after the OTP device stores the key value, the controller programs all of the cells in the initial state to the final state.
9 . The key storage device of claim 1 , wherein after the controller writes the key value into the OTP device, the controller verifies whether the key value read from the OTP device matches the pre-existing key value read from the hardware key device.
10 . The key storage device of claim 1 , wherein after the controller writes the key value into the OTP device, the controller further programs a flag in the OTP device to indicate completion of the key transfer procedure.
11 . A method for writing a key value into an one-time-programmable (OTP) device, wherein the method is applicable to a key storage device, the key storage device comprises the OTP device, and the method comprises:
utilizing an energy harvester of the key storage device to collect energy particles during a semiconductor process of a wafer which comprises the key storage device and to generate a regular voltage accordingly;
after the regular voltage reaches a predetermine level, utilizing a controller of the key storage device to read a pre-existing key value from a hardware key device of the key storage device;
utilizing the controller to write the key value into the OTP device according to the pre-existing key value; and
after the OTP device stores the key value, utilizing the controller to erase the pre-existing key value within the hardware key device.
12 . The method of claim 11 , wherein the key storage device is implemented on previously fabricated metal layers, the energy particles collected by the energy harvester are configured for fabrication of at least one subsequently fabricated metal layer, and the previously fabricated metal layers are fabricated before the at least one subsequently fabricated metal layer.
13 . The method of claim 11 , further comprising:
utilizing a boosted voltage generator of the key storage device to generate a boosted voltage according to the regular voltage.
14 . The method of claim 13 , wherein an operation of writing the key value into the OTP device is performed with aid of the boosted voltage.
15 . The method of claim 13 , wherein an operation of erasing the pre-existing key value within the hardware key device is performed with aid of the boosted voltage.
16 . The method of claim 13 , wherein the boosted voltage comprises a first boosted voltage and a second boosted voltage, an operation of writing the key value into the OTP device is performed with aid of the first boosted voltage, and an operation of erasing the pre-existing key value within the hardware key device is performed with aid of the second boosted voltage.
17 . The method of claim 11 , wherein utilizing the controller to erase the pre-existing key value within the hardware key device comprises:
programming all cells of the hardware key device to be a same logic value.
18 . The method of claim 11 , wherein each of cells of the hardware key device is either in an initial state or in a final state, each cell in the final state is unable to be reversed to the initial state, and utilizing the controller to erase the pre-existing key value within the hardware key device comprises:
programing all of the cells in the initial state to the final state.
19 . The method of claim 11 , further comprising:
after the controller writes the key value into the OTP device, utilizing the controller to verify whether the key value read from the OTP device matches the pre-existing key value read from the hardware key device.
20 . The method of claim 11 , further comprising:
after the controller writes the key value into the OTP device, the controller further programs a flag in the OTP device to indicate completion of the key transfer procedure.