DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
According to one embodiment, a display device includes a first inorganic insulating layer, an organic insulating layer, a lower electrode, a second inorganic insulating layer provided on the organic insulating layer, an organic layer provided on the lower electrode, an upper electrode provided on the organic layer, and a plurality of terminals provided on the first inorganic insulating layer. The organic insulating layer has first apertures which overlap the terminals, respectively, and at least one second aperture located between the adjacent terminals. The second inorganic insulating layer has third apertures which overlap the terminals, respectively, and is in contact with the first inorganic insulating layer in the second aperture.
1 . A display device comprising:
a substrate;
a first inorganic insulating layer provided over a display area which displays an image and a surrounding area located on an external side relative to the display area above the substrate;
an organic insulating layer provided on the first inorganic insulating layer;
a lower electrode provided on the organic insulating layer in the display area;
a second inorganic insulating layer which is provided on the organic insulating layer and overlaps a peripheral portion of the lower electrode;
an organic layer which is provided on the lower electrode and includes a light emitting layer;
an upper electrode provided on the organic layer; and
a plurality of terminals provided on the first inorganic insulating layer in the surrounding area, wherein
the organic insulating layer has first apertures which overlap the terminals, respectively, and at least one second aperture located between the adjacent terminals, and
the second inorganic insulating layer has third apertures which overlap the terminals, respectively, and is in contact with the first inorganic insulating layer in the second aperture.
2 . The display device of claim 1 , wherein
the second aperture extends in a direction intersecting with a direction in which the terminals are arranged.
3 . The display device of claim 1 , wherein
the second apertures are arranged in a direction intersecting with a direction in which the terminals are arranged.
4 . The display device of claim 1 , wherein
the organic insulating layer is exposed from the second inorganic insulating layer in each of the third apertures.
5 . The display device of claim 1 , wherein
in the organic insulating layer, a thickness immediately above each of the terminals is less than a thickness immediately under the lower electrode.
6 . The display device of claim 1 , wherein
each of the terminals is a multilayer body including an aluminum layer, and
the organic insulating layer covers a peripheral portion of each of the terminals.
7 . The display device of claim 1 , further comprising
a partition which has a lower portion provided on the second inorganic insulating layer and formed of a conductive material and an upper portion provided on the lower portion and protruding from a side surface of the lower portion in the display area,
the lower electrode, the organic layer and the upper electrode are surrounded by the partition in plan view, and
the upper electrode is in contact with the partition.
8 . The display device of claim 1 , wherein
each of the first inorganic insulating layer and the second inorganic insulating layer is formed of one of silicon oxide, silicon nitride and silicon oxynitride.
9 . A manufacturing method of a display device, the method comprising:
forming a plurality of terminals on a first inorganic insulating layer in a surrounding area;
forming an organic insulating layer which has first apertures overlapping the terminals, respectively, and at least one second aperture located between the adjacent terminals;
forming a lower electrode on the organic insulating layer in a display area;
forming a second inorganic insulating layer which has third apertures overlapping the terminals, respectively, is in contact with the first inorganic insulating layer in the second aperture, and overlaps a peripheral portion of the lower electrode;
forming an organic layer including a light emitting layer, on the lower electrode; and
forming an upper electrode on the organic layer.
10 . The manufacturing method of claim 9 , wherein
each of the third apertures of the second inorganic insulating layer is formed such that the organic insulating layer is exposed from each of the third apertures.
11 . The manufacturing method of claim 9 , wherein
the organic insulating layer is formed such that a thickness immediately above each of the terminals is less than a thickness immediately under the lower electrode.
12 . The manufacturing method of claim 9 , wherein
the forming the plurality of terminals includes:
forming a first conductive layer on the first inorganic insulating layer;
forming a second conductive layer which is an aluminum layer on the first conductive layer;
forming a third conductive layer on the second conductive layer; and
patterning the first conductive layer, the second conductive layer and the third conductive layer.
13 . The manufacturing method of claim 12 , wherein
the organic insulating layer is formed so as to cover a peripheral portion of each of the terminals.
14 . The manufacturing method of claim 9 , wherein
further, before forming the organic layer,
in the display area, a partition which has a lower portion located on the second inorganic insulating layer and an upper portion located on the lower portion and protruding from a side surface of the lower portion is formed.
15 . The manufacturing method of claim 14 , wherein
each of the organic layer and the upper electrode is formed by vapor deposition using the partition as a mask.
16 . The manufacturing method of claim 15 , wherein
further, after forming the upper electrode,
a cap layer is formed on the upper electrode by performing vapor deposition using the partition as a mask, and
a sealing layer which covers the partition and the cap layer is formed.
17 . The manufacturing method of claim 16 , wherein
further, after forming the sealing layer,
a patterned resist is formed on the sealing layer, and
part of the sealing layer, part of the cap layer, part of the upper electrode and part of the organic layer are removed in series by performing etching using the resist as a mask.
18 . The manufacturing method of claim 9 , wherein
each of the first inorganic insulating layer and the second inorganic insulating layer is formed of one of silicon oxide, silicon nitride and silicon oxynitride.