SEMICONDUCTOR DEVICE, OP-AMP AND DISPLAY DEVICE
The semiconductor device includes a first transistor including a first gate electrode, a second transistor including a second gate electrode electrically connected to the first gate electrode and a source electrode electrically connected to a drain electrode of the first transistor. The first transistor includes a first channel width and a first gate length. The second transistor includes a second channel width and a second gate length. A value obtained by dividing the second channel width by the second gate length is greater than or equal to a value obtained by dividing the first channel width by the first gate length.
1 . A semiconductor device comprising:
a first transistor including a first gate electrode; and
a second transistor including a second gate electrode electrically connected to the first gate electrode and a source electrode electrically connected to a drain electrode of the first transistor,
wherein
the first transistor includes a first channel width and a first gate length,
the second transistor includes a second channel width and a second gate length, and
a value obtained by dividing the second channel width by the second gate length is greater than or equal to a value obtained by dividing the first channel width by the first gate length.
2 . The semiconductor device according to claim 1 ,
wherein the first gate length is the same as the second gate length.
3 . The semiconductor device according to claim 2 ,
wherein the second channel width is N times the first channel width.
4 . The semiconductor device according to claim 1 , further comprising an active layer,
wherein the active layer includes one pattern having the first channel width and the second channel width.
5 . The semiconductor device according to claim 4 ,
wherein the active layer includes a poly-silicon.
6 . The semiconductor device according to claim 1 ,
wherein a source electrode of the first transistor is electrically connected to a voltage supply line, and is supplied with a ground voltage from the voltage supply line.
7 . An OP-AMP comprising:
a plurality of the semiconductor devices according to claim 1 .
8 . The OP-AMP according to claim 7 ,
wherein
the plurality of the semiconductor devices includes a first semiconductor device,
a first signal is input to the first semiconductor device,
a first amplifier circuit includes the first semiconductor device,
a differential amplifier unit is electrically connected to the first semiconductor device, and
a current mirror unit is electrically connected to the differential amplifier unit.
9 . The OP-AMP according to claim 8 ,
wherein
the plurality of the semiconductor devices includes a second semiconductor device,
the first signal is input to the second semiconductor device,
the second semiconductor device is different from the first semiconductor device, and
a second amplifier circuit is electrically connected to the first amplifier circuit and includes the second semiconductor device and a source ground amplifier unit electrically connected to the second semiconductor device.
10 . A display device comprising:
the OP-AMP according to claim 9 ; and
a plurality of pixels electrically connected to the OP-AMP.