Method of manufacturing a semiconductor device and pattern formation method
In a pattern formation method, a photoresist layer is formed over a substrate by combining a first precursor and a second precursor in a vapor state to form a photoresist material. The first precursor is an organometallic having a formula M a R b X c , where M is one or more selected from the group consisting of Sn, Bi, Sb, In, and Te, R is an alkyl group that is substituted by different EDG and/or EWG, X is a halide or sulfonate group, and 1≤a≤2, b≥1, c≥1, and b+c≤4. The second precursor is water, an amine, a borane, and/or a phosphine. The photoresist material is deposited over the substrate, and selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.
1 . A method of manufacturing a semiconductor device, comprising:
forming a layer of a reaction product of a first precursor and a second precursor over a substrate,
wherein the first precursor is an organometallic having a formula:
M a R b X c
where M is one or more selected from the group consisting of Sn, Bi, Sb, In, and Te,
R is a C1-C20 alkyl group that is substituted by one or more of the following: —O − , —NH 2 , —NHR1, —NR1 2 , —OH, —OR1, —NHCOR1, —SH, —SR1, phenyl group, and —(C═O)O—, —I, —Cl, —Br, —F, —NR2 3 + , —NO 2 , —SO 3 H, —SO 2 R2, —CN, —CHO, —COR2, —CO 2 H, —CO 2 R2, —CONH 2 , —CONHR2, and —CONR2 2 , where R1 and R2=C1-C4 groups or phenyl groups,
X is a halide or sulfonate group,
1≤a≤2, b≥1, c≥1, and b+c≤4, and
the first precursor is a dimer connected by NH or O, and
the second precursor is one or more selected from the group consisting of water, an amine, a borane, and a phosphine; and
patterning the layer of the reaction product to selectively expose one or more portions of the substrate.
2 . The method according to claim 1 , wherein R is one or more C1-C4 alkyl groups substituted with a phenyl group, —NH 2 , —NHR3, —NR3 2 , —OH, —OR3, where R3=C1-C3 alkyl group or a phenyl group.
3 . The method according to claim 1 , wherein R is one or more C1-C4 alkyl groups substituted at the α-C position by one or two phenyl groups, —NH 2 , —NHR4, —NR4 2 , or —OR4, where R4=C1-C3 alkyl group.
4 . The method according to claim 1 , wherein the patterning the layer of the reaction product comprises:
selectively exposing the layer of the reaction product to extreme ultraviolet radiation; and
developing the selectively exposed layer of the reaction product.
5 . The method according to claim 4 , further comprising after the selectively exposing the layer of the reaction product to extreme ultraviolet radiation and before the developing, heating the layer of the reaction product at a temperature ranging from 150° C. to 230° C.
6 . The method according to claim 4 , wherein a dry developer is applied to the layer of the reaction product during the developing.
7 . The method according to claim 4 , further comprising before selectively exposing the layer of the reaction product to extreme ultraviolet radiation, heating the layer of the reaction product at a temperature ranging from 40° C. to 120° C.
8 . The method according to claim 1 , wherein the layer of the reaction product is deposited over the substrate by atomic layer deposition (ALD) or chemical vapor deposition (CVD).
9 . A method of manufacturing a semiconductor device, comprising:
forming a resist layer over a substrate,
wherein the forming the resist layer comprises a reaction product of a first precursor and a second precursor,
wherein the first precursor is an organometallic having a formula:
MR 2 X 2 —NH-MR 2 X 2
where M is one or more selected from the group consisting of Sn, Bi, Sb, In, and Te,
R is an alkyl group that is substituted by one or more of electron-donating groups (EDG) or electron-withdrawing groups (EWG),
X is a halide or sulfonate group, and
the second precursor is one or more selected from the group consisting of water, an amine, a borane, and a phosphine; and
patterning the resist layer to selectively expose portions of the substrate.
10 . The method according to claim 9 , wherein the second precursor is ammonia.
11 . The method according to claim 9 , wherein R is one or more C1-C4 alkyl groups substituted with a phenyl group, —NH 2 , —NHR3, —NR3 2 , —OH, —OR3, where R3=C1-C3 alkyl group or a phenyl group.
12 . The method according to claim 9 , wherein R is one or more C1-C4 alkyl groups substituted at the α-C position by one or two phenyl groups, —NH 2 , —NHR4, —NR4 2 , or —OR4, where R4=C1-C3 alkyl group.
13 . The method according to claim 9 , wherein the patterning the resist layer comprises:
selectively exposing the resist layer to extreme ultraviolet radiation; and
developing the selectively exposed resist layer.
14 . The method according to claim 13 , further comprising after the selectively exposing the resist layer to extreme ultraviolet radiation and before the developing, heating the resist layer at a temperature ranging from 150° C. to 230° C.
15 . The method according to claim 13 , further comprising before the selectively exposing the resist layer to extreme ultraviolet radiation, heating the resist layer at a temperature ranging from 40° C. to 120° C.
16 . A method of manufacturing a semiconductor device, comprising:
forming a resist layer over a substrate,
wherein the resist layer comprises a reaction product of a first precursor and a second precursor,
wherein the first precursor is an organometallic having a formula:
MRX 3 —O-MRX 3
where M includes one or more of Sn, Bi, Sb, In, or Te,
R is an alkyl group that is substituted by one or more of electron-donating groups (EDG) or electron-withdrawing groups (EWG), and
X is a halide or sulfonate group, and
the second precursor includes one or more of water, an amine, a borane, or a phosphine; and
patterning the resist layer to selectively expose portions of the substrate.
17 . The method according to claim 16 , wherein the second precursor is water vapor.
18 . The method according to claim 16 , wherein R is one or more C1-C4 alkyl groups substituted with a phenyl group, —NH 2 , —NHR3, —NR3 2 , —OH, —OR3, where R3=C1-C3 alkyl group or a phenyl group.
19 . The method according to claim 16 , wherein R is one or more C1-C4 alkyl groups substituted at the α-C position by one or two phenyl groups, —NH 2 , —NHR4, —NR4 2 , or —OR4, where R4=C1-C3 alkyl group.
20 . The method according to claim 16 , wherein the patterning the resist layer comprises:
selectively exposing the resist layer to extreme ultraviolet radiation; and
developing the selectively exposed resist layer.