Semiconductor device
A semiconductor device includes: a transistor provided in a first region of a semiconductor layer in a plan view; a transistor provided in a second region adjacent to the first region of the semiconductor layer in the plan view; and a drain pad provided in a third region not overlapping the first region and the second region in the plan view. In the plan view, the first region and the second region are one region and an other region that divide an area of the semiconductor layer excluding the third region in half. In the plan view, the transistors are arranged in a first direction. The center of the third region is located on a straight center line that divides the semiconductor layer in half in the first direction and is orthogonal to the first direction. In the plan view, the drain pad is contained in the third region.
1. A semiconductor device that is a facedown mountable, chip-size-package type semiconductor device, the semiconductor device comprising:
a semiconductor substrate;
a low-concentration impurity layer that is provided on the semiconductor substrate;
a first vertical MOS transistor that is provided in a first region of a semiconductor layer that is a combination of the semiconductor substrate and the low-concentration impurity layer;
a second vertical MOS transistor that is provided in a second region adjacent to the first region in a plan view of the semiconductor layer;
a plurality of first source pads that are provided in the first region in the plan view and connected to a first source electrode of the first vertical MOS transistor;
a first gate pad that is provided in the first region in the plan view and connected to a first gate electrode of the first vertical MOS transistor;
a plurality of second source pads that are provided in the second region in the plan view and connected to a second source electrode of the second vertical MOS transistor;
a second gate pad that is provided in the second region in the plan view and connected to a second gate electrode of the second vertical MOS transistor; and
a metal layer that is provided in contact with a back surface of the semiconductor substrate,
wherein the semiconductor substrate is a common drain region for the first vertical MOS transistor and the second vertical MOS transistor,
in the plan view, the semiconductor layer is in a rectangular shape,
in the plan view, the first vertical MOS transistor and the second vertical MOS transistor are arranged in a first direction,
in the plan view, the semiconductor layer includes a third region that does not overlap the first region and the second region,
in the plan view, the first region and the second region are one region and an other region that divide an area of a region of the semiconductor layer excluding the third region in half,
in the plan view, a center of the third region is located on a center line that is straight and orthogonal to the first direction and divides the semiconductor layer in half in the first direction,
in the plan view, the semiconductor layer includes one drain pad that is connected to the common drain region, and
in the plan view, the one drain pad is contained in the third region.
2. The semiconductor device according to claim 1 ,
wherein in the plan view, the first region and the second region are not disposed between the third region and an outer peripheral side of the semiconductor layer, the outer peripheral side being closest to the third region and parallel to the first direction.
3. The semiconductor device according to claim 1 ,
wherein in the plan view, the center of the third region coincides with a center of the semiconductor layer.
4. The semiconductor device according to claim 3 ,
wherein in the plan view, the first gate pad, the second gate pad, and the one drain pad are each in a circular shape, have a same diameter, and have a smallest area among pads included in the semiconductor layer.
5. The semiconductor device according to claim 3 ,
wherein in the plan view, the first gate pad and the second gate pad are each in a circular shape and have a same diameter, and the first gate pad, the second gate pad, and the one drain pad are contained in a same stripe-shaped region.
6. The semiconductor device according to claim 3 ,
wherein in the plan view, the one drain pad is in a substantially rectangular shape, a longitudinal direction of the one drain pad and the center line are parallel to each other, and the longitudinal direction of the one drain pad and a longer-side direction of the semiconductor layer are parallel to each other.
7. A semiconductor device that is a facedown mountable, chip-size-package type semiconductor device, the semiconductor device comprising:
a semiconductor substrate;
a low-concentration impurity layer that is provided on the semiconductor substrate;
a first vertical MOS transistor that is provided in a first region of a semiconductor layer that is a combination of the semiconductor substrate and the low-concentration impurity layer;
a second vertical MOS transistor that is provided in a second region adjacent to the first region in a plan view of the semiconductor layer;
a plurality of first source pads that are provided in the first region in the plan view and connected to a first source electrode of the first vertical MOS transistor;
a first gate pad that is provided in the first region in the plan view and connected to a first gate electrode of the first vertical MOS transistor;
a first drain pad that is provided in the first region in the plan view and connected to a first drain electrode of the first vertical MOS transistor;
a plurality of second source pads that are provided in the second region in the plan view and connected to a second source electrode of the second vertical MOS transistor;
a second gate pad that is provided in the second region in the plan view and connected to a second gate electrode of the second vertical MOS transistor;
a second drain pad that is provided in the second region in the plan view and connected to a second drain electrode of the second vertical MOS transistor; and
a metal layer that is provided in contact with a back surface of the semiconductor substrate,
wherein the semiconductor substrate is a common drain region for the first vertical MOS transistor and the second vertical MOS transistor,
in the plan view, the semiconductor layer is in a rectangular shape,
in the plan view, the first region and the second region are one region and an other region that divide an area of the semiconductor layer in half,
in the plan view, a middle point of a line segment that connects a center of the first gate pad and a center of the second gate pad is located on a border line between the first region and the second region,
in the plan view, a middle point of a line segment that connects a center of the first drain pad and a center of the second drain pad is located on the border line,
no portion of the first source pad is disposed between the first gate pad and the first drain pad, and
no portion of the second source pad is disposed between the second gate pad and the second drain pad.
8. The semiconductor device according to claim 7 ,
wherein in the plan view, the first gate pad and the first drain pad are arranged in a direction parallel to the border line, and no portion of an other pad is disposed between the first drain pad and an outer peripheral side of the semiconductor layer, the outer peripheral side being closest to the first drain pad, and
in the plan view, the second gate pad and the second drain pad are arranged in the direction parallel to the border line, and no portion of an other pad is disposed between the second drain pad and an outer peripheral side of the semiconductor layer, the outer peripheral side being closest to the first drain pad.
9. The semiconductor device according to claim 7 ,
wherein in the plan view, the first gate pad and the first drain pad are arranged in a direction orthogonal to the border line,
in the plan view, the second gate pad and the second drain pad are arranged in the direction orthogonal to the border line, and
in the plan view, the middle point of the line segment connecting the center of the first drain pad and the center of the second drain pad coincides with a center of the semiconductor layer.
10. The semiconductor device according to claim 7 ,
wherein in the plan view, the first drain pad and the plurality of first source pads are disposed at regular intervals in a first band pattern,
the first drain pad and the plurality of first source pads have a same width in a direction in which the first band pattern is formed,
in the plan view, the second drain pad and the plurality of second source pads are disposed at regular intervals in a second band pattern, and
the second drain pad and the plurality of second source pads have a same width in a direction in which the second band pattern is formed.
11. A semiconductor device that is a facedown mountable, chip-size-package type semiconductor device, the semiconductor device comprising:
a semiconductor substrate;
a low-concentration impurity layer that is provided on the semiconductor substrate;
a first vertical MOS transistor that is provided in a first region of a semiconductor layer that is a combination of the semiconductor substrate and the low-concentration impurity layer;
a second vertical MOS transistor that is provided in a second region adjacent to the first region in a plan view of the semiconductor layer;
a plurality of first source pads that are provided in the first region in the plan view and connected to a first source electrode of the first vertical MOS transistor;
a first gate pad that is provided in the first region in the plan view and connected to a first gate electrode of the first vertical MOS transistor;
a first drain pad that is provided in the first region in the plan view and connected to a first drain electrode of the first vertical MOS transistor;
a plurality of second source pads that are provided in the second region in the plan view and connected to a second source electrode of the second vertical MOS transistor;
a second gate pad that is provided in the second region in the plan view and connected to a second gate electrode of the second vertical MOS transistor;
a second drain pad that is provided in the second region in the plan view and connected to a second drain electrode of the second vertical MOS transistor; and
a metal layer that is provided in contact with a back surface of the semiconductor substrate,
wherein the semiconductor substrate is a common drain region for the first vertical MOS transistor and the second vertical MOS transistor,
in the plan view, the semiconductor layer is in a rectangular shape,
in the plan view, the first region and the second region are one region and an other region that divide an area of the semiconductor layer in half,
in the plan view, a middle point of a line segment that connects a center of the first drain pad and a center of the second drain pad is located on a border line between the first region and the second region,
in the plan view, at least part of the plurality of first source pads are disposed between the first drain pad and the border line, and
in the plan view, at least part of the plurality of second source pads are disposed between the second drain pad and the border line.
12. The semiconductor device according to claim 11 ,
wherein in the plan view, the first drain pad is disposed closest to a corner portion defined by two intersecting sides among four sides that constitute outer peripheral sides of the semiconductor layer, and
in the plan view, the second drain pad is disposed closest to an other corner portion that is diagonally opposite to the corner portion of the semiconductor layer to which the first drain pad is disposed.