PHOTODIODE WITH AN INTERFACE REGION TO REDUCE A BAND OFFSET BETWEEN A CARRIER GENERATING REGION AND A DOPED REGION
A photodiode comprises a carrier generating region of a semiconductor having a bandgap that absorbs light of a given wavelength, such that electrical charge carriers are generated therein. The photodiode further comprises n-doped and a p-doped semiconductor regions having respective bandgaps higher than the bandgap of the carrier generating region, the respective bandgaps being transparent to the light of the given wavelength, the n n-doped and a p-doped semiconductor regions being along different sides of the carrier generating region. The photodiode further comprises an interface region between the carrier generating region and a given doped region of n-doped and a p-doped semiconductor regions, the interface region comprising one or more of a semiconductor alloy and a semiconductor sequence that is one or more of graded and stepped in composition, selected to reduce a band offset between the carrier generating region and the given doped region adjacent the interface region.
1 . A photodiode comprising:
a carrier generating region comprising a semiconductor having a bandgap that absorbs light of a given wavelength, such that electrical charge carriers are generated in the carrier generating region by the light of the given wavelength;
an n-doped semiconductor region and a p-doped semiconductor region having respective bandgaps higher than the bandgap of the carrier generating region, the respective bandgaps being transparent to the light of the given wavelength, the n-doped semiconductor region and the p-doped semiconductor region being along different sides of the carrier generating region; and
an interface region between the carrier generating region and a given doped region of the n-doped semiconductor region or the p-doped semiconductor region, the interface region comprising one or more of a semiconductor alloy and a semiconductor sequence that is one or more of graded and stepped in composition, selected to reduce a band offset between the carrier generating region and the given doped region adjacent the interface region.
2 . The photodiode of claim 1 , wherein the semiconductor of the carrier generating region comprises a carrier-generating semiconductor and the given doped region comprises a transparent semiconductor different from the carrier-generating semiconductor,
wherein the interface region comprises a graded alloy of the carrier-generating semiconductor and the transparent semiconductor,
wherein, in the interface region, content of the carrier-generating semiconductor in the graded alloy decreases from the carrier generating region to the given doped region, and respective content of the transparent semiconductor in the graded alloy increases from the carrier generating region to the given doped region.
3 . The photodiode of claim 1 , wherein the semiconductor of the carrier generating region comprises a carrier-generating semiconductor and the given doped region comprises a transparent semiconductor different from the carrier-generating semiconductor,
wherein, in the interface region, content of the carrier-generating semiconductor in the steps decreases from the carrier generating region to the given doped region, and respective content of the transparent semiconductor in the steps increases from the carrier generating region to the given doped region.
4 . The photodiode from claim 1 , wherein, the semiconductor of the carrier generating region comprises a carrier-generating semiconductor and the given doped region comprises a transparent semiconductor different from the carrier-generating semiconductor,
and wherein the interface region comprises at least one step in respective content of the carrier-generating semiconductor and the transparent semiconductor.
5 . The photodiode of claim 1 , wherein the interface region provides one or more band offset steps in the band offset between the carrier generating region and the given doped region.
6 . The photodiode of claim 1 , wherein the interface region is formed from a portion of the carrier generating region closest to the given doped region.
7 . The photodiode of claim 1 , wherein the interface region is formed from a portion of the given doped region closest to the carrier generating region.
8 . The photodiode of claim 1 , wherein the semiconductor of the carrier generating region comprises carrier-generating germanium and the given doped region comprises the p-doped semiconductor region, the p-doped semiconductor region comprising p-doped silicon.
9 . The photodiode of claim 1 , wherein the interface region is between the carrier generating region and the p-doped semiconductor region, such that carriers for which the band offset is reduced comprise holes.
10 . The photodiode of claim 1 , wherein the interface region is between the carrier generating region and the n-doped semiconductor region, such that carriers for which the band offset is reduced comprise electrons.
11 . The photodiode of claim 1 , wherein the n-doped semiconductor region and the p-doped semiconductor region are on opposite sides of the carrier generating region, with the interface region between the carrier generating region and one of the n-doped semiconductor region and the p-doped semiconductor region.
12 . The photodiode of claim 1 , wherein the n-doped semiconductor region and the p-doped semiconductor region are on adjacent sides of the carrier generating region, with the interface region between the carrier generating region and one of the n-doped semiconductor region and the p-doped semiconductor region.