UNIPOLAR THERMOELECTRIC GENERATOR WITH VERTICAL INTERCONNECTS AND THERMAL FOCUSING

1 . A thermoelectric generator, comprising:

a plurality of pairs of P type semiconductor pellets configured on a substrate and interconnected by vertical and horizontal interconnects;

an N type semiconductor pellet configured on the substrate; and

an electrode, wherein the N type semiconductor pellet is operable to reverse electrical current to at least one of the P type semiconductor pellets through the electrode.

2 . The thermoelectric generator of claim 1 , wherein:

the P type semiconductor pellets have a zT value of about 2.6.

3 . The thermoelectric generator of claim 1 , wherein:

at least the vertical interconnects are configured from graphene oxide, reduced graphene oxide, an aerogel, a metal sidewall on an insulator, or a metal doped BiTe pellet.

4 . The thermoelectric generator of claim 1 , wherein:

the vertical interconnects are operable to direct electrical current as a top-to-bottom series circuit between neighboring P type semiconductor pellet pairs.

5 . The thermoelectric generator of claim 1 , wherein:

the vertical interconnects comprise a shape including at least one of a z-shaped strip, a cuboid, a cylinder, a sphere, a trapezoid, or a pyramid.

6 . The thermoelectric generator of claim 1 , wherein:

the P type semiconductor pellets arc metallized with a metal layer surrounding each of the P type semiconductor pellets;

each metal layer comprises an aperture that exposes its respective P type semiconductor pellet about a perimeter of the P type semiconductor pellet at a predetermined sidewall height of the P type semiconductor pellet; and

the metal layer remains at the sidewall of each P type semiconductor pellet.

7 . The thermoelectric generator of claim 1 , wherein:

the P type semiconductor pellets are configured with a non-metal layer that is thermally conductive and electrically insulative surrounding each of the P type semiconductor pellets;

each non-metal layer comprises an aperture that exposes its respective P type semiconductor pellet about a perimeter of the P type semiconductor pellet at a predetermined sidewall height of the P type semiconductor pellet; and

the non-metal layer remains at the sidewall of each P type semiconductor pellet.

8 . The thermoelectric generator of claim 6 , wherein:

the metal layer comprises copper, titanium, tungsten, nickel-phosphorous, or a chromium alloy.

9 . The thermoelectric generator of claim 7 , wherein:

the non-metal layer comprises thermally conductive high temperature epoxies and adhesives.

10 . The thermoelectric generator of claim 6 , wherein:

the aperture electrically isolates a top portion of the metal layer from a bottom portion of the metal layer of each P type semiconductor pellet.

11 . The thermoelectric generator of claim 6 , further comprising:

a plurality of metal containers, each being thermally and electrically bonded to the metal layer of one of the P type semiconductor pellets, wherein the metal containers are configured between the metal layers and the substrate.

12 . The thermoelectric generator of claim 6 , wherein:

the apertures provide a non-linear effect on a power output of the thermoelectric generator by modifying an isotherm surface curvature within the P type semiconductor pellets.

13 . The thermoelectric generator of claim 12 , wherein:

the isotherm surface curvature within the P type semiconductor pellets is operable to increase an effective surface area of a thermoelectric effect within a volume of the P type semiconductor pellets via heat injection through the sidewall of the P type semiconductor pellets.

14 . The thermoelectric generator of claim 1 , wherein:

the P type semiconductor pellets are configured in a shape that is operable to increase a thermal lensing effect of the thermoelectric generator.

15 . The thermoelectric generator of claim 11 , wherein:

the shape is cuboid.

16 . The thermoelectric generator of claim 11 , wherein:

the shape is cylindrical.