PHOTODETECTOR
A photodetector of the present invention includes: a photodiode; and a protection diode. The photodiode and the protection diode are integrated on a same semiconductor substrate. The photodiode includes a semiconductor portion made of at least one type of semiconductor material, an anode electrode, and a cathode electrode. The protection diode includes a core layer, a semiconductor portion provided in the core layer and including a first-type semiconductor region doped with first-type impurity ions and a second-type semiconductor region doped with second-type impurity ions, an anode electrode, and a cathode electrode. The semiconductor portion of the protection diode includes only one type of semiconductor material used for the semiconductor portion of the photodiode. The anode electrodes of the protection diode and the photodiode are connected to each other. The cathode electrodes of the protection diode and the photodiode are connected to each other.
1 . A photodetector comprising:
a photodiode; and
a protection diode,
wherein:
the photodiode and the protection diode are integrated on a same semiconductor substrate;
the photodiode includes a semiconductor portion made of at least one type of semiconductor material, an anode electrode, and a cathode electrode;
the protection diode includes a core layer, a semiconductor portion provided in the core layer and including a first-type semiconductor region doped with first-type impurity ions and a second-type semiconductor region doped with second-type impurity ions, an anode electrode, and a cathode electrode;
the semiconductor portion of the protection diode includes only one type of semiconductor material used for the semiconductor portion of the photodiode;
the anode electrode of the protection diode and the anode electrode of the photodiode are connected to each other; and
the cathode electrode of the protection diode and the cathode electrode of the photodiode are connected to each other.
2 . The photodetector according to claim 1 , wherein
the semiconductor portion of the photodiode includes:
a core layer doped with a first-type impurity;
an optical waveguide connected to the core layer;
a light-absorbing layer doped with a second-type impurity on the core layer;
a lower cladding layer below the core layer;
an upper cladding layer on the core layer and the light-absorbing layer; and
an electrode connected to each of the core layer and the light-absorbing layer.
3 . The photodetector according to claim 2 , wherein the core layer of the photodiode and the semiconductor portion of the protection diode are made of the same material.
4 . The photodetector according to claim 2 , wherein the core layer of the photodiode and the semiconductor portion of the protection diode share the same layer.
5 . The photodetector according to claim 2 , wherein a main material of the core layer of the photodiode is silicon, and a main material of the light-absorbing layer is germanium.
6 . The photodetector according to claim 1 , wherein the photodiode and the protection diode are arranged in an incident direction of light passing through a silicon waveguide layer included in the photodiode.
7 . The photodetector according to claim 1 , wherein the photodiode and the protection diode are arranged in a direction perpendicular to an incident direction of light passing through a silicon waveguide layer included in the photodiode.
8 . The photodetector according to claim 1 , wherein a plurality of the protection diodes are connected to the photodiode.
9 . The photodetector according to claim 1 , wherein only the upper cladding layer is formed on the semiconductor portion of the protection diode and between the electrodes of the protection diode.