Non-Condensing Thermal Materials With Low Sulfur Content
The present disclosure relates to non-condensing thermal materials (e.g., thermal interface materials (TIMs), thermally-conductive pads, thermally-conductive EMI absorbers, etc.) with low sulfur content. In exemplary embodiments, a thermal interface material has a thermal conductivity of at least 4.5 Watts per meter per Kelvin (W/mK). The thermal interface material includes less than 50 parts per million (PPM) sulfur. And the thermal interface material is configured to be non-condensing. The thermal interface material may comprise a thermally-conductive EMI absorber; and/or the thermal interface material may be silicone free and/or have no detectable silicone.
1 . A thermal interface material comprising a matrix or base resin and at least one functional filler in the matrix or base resin, the thermal interface material having a thermal conductivity of at least 4.5 Watts per meter per Kelvin (W/mK), the thermal interface material including less than 50 parts per million (PPM) sulfur, and the thermal interface material configured to be non-condensing, wherein:
the thermal interface material comprises a thermally-conductive EMI absorber; and/or
the thermal interface material is silicone free and/or does not include detectable silicone.
2 . The thermal interface material of claim 1 , wherein the thermal interface material includes less than 2 parts per million (PPM) sulfur.
3 . The thermal interface material of claim 1 , wherein the thermal interface material is sulfur free and/or has a sufficiently low sulfur content such that sulfur is not detectable in the thermal interface material by a spectrometer having a detection limit of 2 ppm.
4 . The thermal interface material of claim 1 , wherein the thermal interface material is sulfur free and/or has a sufficiently low sulfur content such that the thermal interface material does not include a sufficient amount of sulfur to interact and/or react with another material within a device when the thermal interface material contacts the another material, which interaction and/or reaction could otherwise form an undesirable substance.
5 . The thermal interface material of claim 1 , wherein the thermal interface material is sulfur free and/or has a sufficiently low sulfur content such that the thermal interface material does not include a sufficient amount of sulfur to react with silver within a device when the thermal interface material contacts the silver within the device, which reaction could otherwise form silver sulfide causing the device to not operate optimally.
6 . The thermal interface material claim 1 , wherein the thermal interface material is configured to be non-condensing such that there is no condensation from the thermal interface material that is visible or felt by a finger on a watch glass after exposure of the thermal interface material on a hotplate to 85° C.+/−2° C. for 1000 hours.
7 . The thermal interface material claim 1 , wherein the thermal interface material is configured to be non-condensing such that there is no condensation from the thermal interface material that is visible or felt by a finger on a watch glass after exposure of the thermal interface material on a hotplate to 120° C.+/−2° C. for 72 hours.
8 . The thermal interface material of claim 1 , wherein the thermal interface material is configured to be non-condensing with less than a predetermined level of condensable volatile components over a predetermined time period at a predetermined temperature.
9 . The thermal interface material of claim 1 , wherein the thermal interface material comprises a non-condensing thermal interface material usable with an optical device without condensation from the thermal interface material interfering with optical aspects of the optical device.
10 . The thermal interface material of claim 1 , wherein the thermal interface material has:
an attenuation of at least 87 dB/cm at a frequency of 13 GHz;
an attenuation of at least 142 dB/cm at a frequency of 25 GHz; and
an attenuation of at least 138 dB/cm at a frequency of 40 GHz.
11 . The thermal interface material of claim 1 , wherein the thermal interface material has a thermal conductivity of at least 9 Watts per meter per Kelvin (W/mK) as determined by Hot Disk Thermal Constants Analyzer.
12 . The thermal interface material of claim 1 , wherein the thermal interface material comprises a thermally-conductive pad, a thermally-conductive gap filler, a phase change thermal interface material, a dispensable material, a bulk putty, a thermal grease, a sheet of thermal interface material, a thermally-conductive EMI absorber pad and/or a thermally-conductive absorber sheet material.
13 . The thermal interface material of claim 1 , wherein:
the thermal interface material comprises a thermally-conductive EMI absorber pad having a thermal conductivity of at least 9 W/mK; and
the thermally-conductive EMI absorber pad is silicone free and/or does not include detectable silicone.
14 . The thermal interface material of claim 1 , wherein the thermal interface material is silicone free, has less than 2 parts per million silicone and/or has a sufficiently low silicone content such that silicone is not detectable in the thermal interface material by a spectrometer.
15 . The thermal interface material of claim 1 , wherein the thermal interface material is entirely free of silicone and/or entirely free of sulfur.
16 . The thermal interface material of claim 1 , wherein the thermal interface material does not include any polysiloxane in the matrix or base resin or in additive components of the thermal interface material.
17 . The thermal interface material of claim 1 , wherein:
the thermal interface material is silicone based; and/or
the at least one functional filler comprises aluminum oxide and silicon carbide.
18 . The thermal interface material of claim 1 , wherein:
the thermal interface material has a thermal resistance according to ASTM-D5470 of:
0.72° C.*cm 2 /W or less at 69 kilopascals (kPa), 50° C., and 0.5 millimeter (mm) starting thickness;
1.44° C.*cm 2 /W or less at 69 kPa, 50° C., and 1 mm starting thickness; and
2.32° C.*cm 2 /W or less at 69 kPa, 50° C., and 2.5 millimeter (mm) starting thickness.
19 . The thermal interface material of claim 1 , wherein:
the thermal interface material has a hardness according to ASTM D2240 of 56 Shore 00 or less at 30 seconds for a thickness of 1 millimeter or more; and/or
the thermal interface material has a deflection at 1 mm starting thickness according to ASTM D575 of 5% at 69 kPa and 36% at 345 kPa; and/or
the thermal interface material has a breakdown voltage at 2.5 mm thickness according to ASTM D149 of 0.66 kV (AC) and 0.64 kV (DC); and/or
the thermal interface material has a volume resistivity according to ASTM D257 of 1.6×10 12 Ω*cm.
20 . The thermal interface material of claim 1 , wherein:
the thermal interface material comprises the thermally-conductive EMI absorber; or
the thermal interface material is silicone free and/or does not include detectable silicone.