IP Library › Granted Patent US 12,624,440
Granted Patent B2
US 12,624,440 · App. 18/901,662 · Granted May 12, 2026

Surface treatment method

Inventors: Er-Bao Niu (Taipei, TW); Po-Wen Huang (Taipei, TW); Yu-Chun Yang (Taipei, TW); Guo-Lin Yang (Taipei, TW); Tao Chen (Taipei, TW)
Assignee: ASUSTEK COMPUTER INC.
C23C14/12C23C14/24C23C14/35C25D11/18
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Quick Facts
Patent No.
US 12,624,440
App. No.
18/901,662
Granted
May 12, 2026
Kind
B2
Abstract

A surface treatment method is provided, applicable to a housing. The housing includes a surface. The surface treatment method includes: performing anodic treatment on the surface, to form a microporous structure on the surface; depositing a silicon material on the surface, to form a silicon polymer material layer to fill the microporous structure; and depositing a fluorine-containing monomer material on the surface, where the silicon polymer material layer reacts with the fluorine-containing monomer material to generate a silicon-fluorine polymer mixture structure film to perform pore sealing on the microporous structure.

Claims (16)

1 . A surface treatment method, applicable to a housing, wherein the housing comprises a surface, and the surface treatment method comprises:

performing anodic treatment on the surface, to form a microporous structure on the surface;

depositing a silicon material on the surface, to form a silicon polymer material layer to fill the microporous structure; and

depositing a fluorine-containing monomer material on the surface, wherein the silicon polymer material layer reacts with the fluorine-containing monomer material to generate a silicon-fluorine polymer mixture structure film to perform pore sealing on the microporous structure,

wherein the step of depositing the silicon material on the surface comprises depositing the silicon material on the surface in a vacuum environment by using a magnetron sputtering process,

wherein the silicon polymer material is an organosilicon compound with an alternate silicon and oxygen structure, and

wherein the fluorine-containing monomer material comprises a cyano-fluorine monomer material.

2 . The surface treatment method according to claim 1 , wherein the housing is made of aluminum alloy.

3 . The surface treatment method according to claim 1 , wherein the step of depositing the fluorine-containing monomer material on the surface comprises depositing the fluorine-containing monomer material on the surface in a vacuum environment by using a vapor deposition process.

4 . The surface treatment method according to claim 3 , wherein an operating temperature of the vapor deposition process ranges from 60° C. to 85° C.

5 . The surface treatment method according to claim 1 , wherein a thickness of the silicon polymer material layer ranges from 5 nm to 10 nm.

6 . The surface treatment method according to claim 1 , wherein a thickness of the silicon-fluorine polymer mixture structure film ranges from 6 nm to 10 nm.

7 . The surface treatment method according to claim 1 , wherein the step of depositing the silicon material on the surface comprises: coating the silicon material on the surface by using a spray coating process.

8 . The surface treatment method according to claim 1 , wherein the step of depositing the fluorine-containing monomer material on the surface comprises coating the fluorine-containing monomer material on the surface by using a spray coating process.

9 . The surface treatment method according to claim 1 , wherein before the step of depositing the silicon material on the surface, the surface treatment method further comprises absorbing a pigment into the microporous structure.

10 . The surface treatment method according to claim 1 , wherein the silicon-fluorine polymer mixture structure film is made of a silicon-fluorine modified polymer material.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 3, 2024
From: NIU, ER-BAO; HUANG, PO-WEN; YANG, YU-CHUN; YANG, GUO-LIN; CHEN, TAO
To: ASUSTEK COMPUTER INC.
Reel/Frame 068783/0283 →
Priority Claims (1)
TW 113120829 · Jun 5, 2024 · national
Continuity (1)
Related Publication 20250376755A1 · Dec 11, 2025
References Cited (6)
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Machine translation of Takushi et al. JP 2018009088 A (Year: 2018). [cited by examiner]