POLISHING COMPOSITION FOR SEMICONDUCTOR PROCESS AND POLISHING METHOD OF SUBSTRATE USING THE SAME
A polishing composition for a semiconductor process includes abrasive particles, a polyoxyalkylene-based surfactant, and a skew inhibitor of Formula 1 below. The polyoxyalkylene-based surfactant has a hydrophile-lipophile balance (HLB) value of 13 or higher. In Formula 1 above, R 1 is H, a methyl group or an ethyl group, and R 2 , R 3 , and R 4 are each independently a methyl or ethyl group. When the polishing composition having these characteristics is applied to the polishing of a substrate comprising two or more layers, the polishing composition can provide a smoother polished surface while maintaining a certain level of polishing speed.
1 . A polishing composition for a semiconductor process, the polishing composition comprising:
abrasive particles;
a polyoxyalkylene-based surfactant; and
a skew inhibitor of Formula 1 below:
wherein, in Formula 1:
R 1 is H, a methyl group, or an ethyl group; and
R 2 , R 3 , and R 4 are each independently a methyl or ethyl group, and
wherein the hydrophile-lipophile balance (HLB) value of the polyoxyalkylene-based surfactant is 13 or higher.
2 . The polishing composition of claim 1 , wherein the polyoxyalkylene-based surfactant is a compound of Formula 2:
wherein, in Formula 2,
R 5 is an alkyl group having 10 to 30 carbon atoms;
R 6 and R 7 are each independently a methyl group or an ethyl group; and
m and n are each independently an integer from 10 to 30.
3 . The polishing composition of claim 1 , wherein a ratio of a content (by weight) of the skew inhibitor to a content (by weight) of the polyoxyalkylene-based surfactant is from 0.3 to 1.2.
4 . The polishing composition of claim 1 , wherein a weight average molecular weight of the polyoxyalkylene-based surfactant is from 500 g/mol to 4,000 g/mol.
5 . The polishing composition of claim 1 , further comprising an anionic polymeric dispersant,
wherein a surface charge of the abrasive particle is positive.
6 . The polishing composition of claim 5 , wherein the anionic polymeric dispersant comprises at least one compound selected from the group consisting of polyacrylic acid, polymethacrylic acid, polymaleic acid, and derivatives thereof.
7 . The polishing composition of claim 1 , wherein the polishing composition has a pH of 5.5 to 12.
8 . The polishing composition of claim 1 , wherein the polishing composition has a zeta potential of −80 mV to −20 mV.
9 . The polishing composition of claim 1 , wherein the polyoxyalkylene-based surfactant is a dishing inhibitor for silicon oxide films, and the skew inhibitor is for silicon nitride films.
10 . A method of manufacturing a substrate, the method comprising:
polishing a substrate to be polished by applying a slurry of a polishing composition,
wherein the polishing composition comprises:
abrasive particles;
a polyoxyalkylene-based surfactant; and
a skew inhibitor of Formula 1 below:
wherein, in Formula 1:
R 1 is H, a methyl group, or an ethyl group; and
R 2 , R 3 , and R 4 are each independently a methyl or ethyl group, and
wherein the hydrophile-lipophile balance (HLB) value of the polyoxyalkylene-based surfactant is 13 or higher.