CIRCUITRY FOR ALLOWING MULTIPLE SENSORS ON A SEMICONDUCTOR DIE TO SHARE A COMMON SENSOR PAD
A semiconductor die includes a sensor pad, first sensor circuitry electrically connected to the sensor pad, and isolation circuitry coupled between the first sensor circuitry and the sensor pad. The isolation circuitry may be configured to selectively block an electrical current from flowing from the sensor pad to the first sensor circuitry. The semiconductor die may further include second sensor circuitry electrically connected to the sensor pad. The first sensor circuitry may include a current sensor, and the second sensor circuitry may include a temperature sensor.
1 . A semiconductor die, comprising:
a sensor pad;
first sensor circuitry electrically connected to the sensor pad; and
isolation circuitry coupled between the first sensor circuitry and the sensor pad.
2 . The semiconductor die of claim 1 , wherein the isolation circuitry is configured to selectively block an electrical current from flowing from the sensor pad to the first sensor circuitry.
3 . The semiconductor die of claim 1 , further comprising second sensor circuitry electrically connected to the sensor pad.
4 . The semiconductor die of claim 3 , wherein the second sensor circuitry comprises a temperature sensor.
5 . The semiconductor die of claim 4 , wherein the temperature sensor comprises at least one diode having a cathode connected to a power transistor device and an anode connected to the sensor pad.
6 . The semiconductor die of claim 4 , wherein the temperature sensor comprises a plurality of diodes coupled in series such that each adjacent pair of diodes of the plurality of diodes is connected anode-to-cathode, a cathode of a first one of the plurality of diodes is connected to a power transistor device, and an anode of a last one of the plurality of diodes is connected to the sensor pad.
7 . The semiconductor die of claim 1 , further comprising a power semiconductor device.
8 . (canceled)
9 . The semiconductor die of claim 7 , wherein the first sensor circuitry comprises a current sensor.
10 . The semiconductor die of claim 9 , wherein the current sensor comprises a current mirror that mirrors a current of the power semiconductor device.
11 . The semiconductor die of claim 1 , wherein the isolation circuitry comprises a blocking diode, the blocking diode including a cathode connected to the sensor pad and an anode connected to the first sensor circuitry.
12 . The semiconductor die of claim 11 , wherein the blocking diode is a polysilicon diode comprising an N-type doped region forming the cathode and a P-type doped region forming the anode.
13 . The semiconductor die of claim 1 , wherein the isolation circuitry comprises a metal-oxide-semiconductor field-effect transistor (MOSFET) having a gate and a drain connected to the first sensor circuitry and having a source connected to the sensor pad.
14 . A semiconductor die, comprising:
a power transistor device;
first sensor circuitry;
second sensor circuitry; and
isolation circuitry coupled between the first sensor circuitry and the second sensor circuitry, the isolation circuitry being configured to block an electrical current from flowing to the first sensor circuitry.
15 . The semiconductor die of claim 14 , wherein the first sensor circuitry comprises a current sensor.
16 . The semiconductor die of claim 15 , wherein the power transistor device comprises a first MOSFET and the current sensor comprises a second MOSFET, a drain of the second MOSFET connected to a drain of the first MOSFET, a gate of the second MOSFET connected to a gate of the first MOSFET, and a source of the second MOSFET connected to the isolation circuitry.
17 . The semiconductor die of claim 16 , wherein the second MOSFET is configured to generate a first current that is a prescribed ratio of a second current in the first MOSFET.
18 . The semiconductor die of claim 14 , wherein the second sensor circuitry comprises a temperature sensor.
19 . The semiconductor die of claim 18 , wherein the temperature sensor comprises at least one diode having a cathode connected to the power transistor device and an anode connected to the isolation circuitry.
20 . The semiconductor die of claim 18 , wherein the temperature sensor comprises at least one diode having an anode connected to the isolation circuitry and a cathode connected to a separate pad electrically isolated from the power transistor device.
21 . The semiconductor die of claim 18 , wherein the temperature sensor comprises a plurality of diodes coupled in series such that each adjacent pair of diodes of the plurality of diodes is connected anode-to-cathode, a cathode of a first one of the plurality of diodes is connected to the power transistor device, and an anode of a last one of the plurality of diodes is connected to the first sensor circuitry.
22 . The semiconductor die of claim 14 , further comprising a sensor pad electrically connected to the second sensory circuitry and to the isolation circuitry, the sensor pad configured to provide external electrical access to the first sensor circuitry and the second sensor circuitry.
23 . The semiconductor die of claim 14 , wherein the isolation circuitry comprises a blocking diode, the blocking diode including a cathode connected to the second sensor circuitry and an anode connected to the first sensor circuitry.
24 .- 28 . (canceled)
29 . A semiconductor die, comprising:
a first MOSFET having a first source pad;
a second MOSFET having a second source pad; and
a temperature sensor electrically coupled to the second source pad.
30 .- 41 . (canceled)