OPTICAL RING MODULATOR
An optical ring modulator for use as a PAM-N modulator, the optical ring modulator comprising: a first optical waveguide which forms a bus waveguide; a ring waveguide optically coupled to the bus waveguide; wherein, the ring waveguide comprises: a first electrode region having a first pn junction or first Moscap, the first pn junction or first Moscap configured to generate a first phase shift upon application of a given voltage across the first pn junction or first Moscap; and a second electrode region having a second pn junction or second Moscap, the second pn junction or second Moscap configured to generate a second phase shift when the given voltage is applied across the second pn junction or second Moscap, wherein the second phase shift is less than the first phase shift.
1 - 10 . (canceled)
11 . An optical ring modulator for use as a PAM-N modulator,
the optical ring modulator comprising:
a first optical waveguide which forms a bus waveguide; and
a ring waveguide optically coupled to the bus waveguide,
wherein, the ring waveguide comprises:
a first electrode region comprising a first pn junction, the first electrode region having a first dopant concentration and a first pn junction width for providing a first effective refractive index upon application of a voltage with a predetermined magnitude across the first pn junction; and
a second electrode region comprising a second pn junction, the second electrode region having a second dopant concentration and a second pn junction width for providing a second effective refractive index upon application of the voltage with the predetermined magnitude across the second pn junction, and
wherein, upon application of the voltage with the predetermined magnitude, the effective refractive index of the first electrode region is approximately double the effective refractive index of the second electrode region such that the first electrode region forms a most significant bit of modulation and the second electrode region forms a least significant bit of modulation.
12 . The optical ring modulator of claim 11 in which the first dopant concentration is greater than the second dopant concentration.
13 . The optical ring modulator of claim 11 in which the first pn junction width is narrower than the second pn junction width.
14 . The optical ring modulator of claim 11 in which the first pn junction is configured to generate a first phase shift upon application of the voltage with the predetermined magnitude across the first pn junction.
15 . The optical ring modulator of claim 11 in which the second pn junction is configured to generate a second phase shift when the voltage with the predetermined magnitude is applied across the second pn junction, wherein the second phase shift is less than the first phase shift.
16 . The optical ring modulator of claim 11 in which the bus waveguide is fabricated on a silicon-on-insulator platform.
17 . The optical ring modulator of claim 11 in which the bus waveguide comprises separate input and output waveguides.
18 . The optical ring modulator of claim 11 in which the bus waveguide is non-continuous.
19 . The optical ring modulator of claim 11 in which, responsive to different voltages being applied to the first and second electrode regions, four different modulation states are provided by the optical ring modulator.
20 . The optical ring modulator of claim 11 further comprising a third electrode region having a third dopant concentration and a third pn junction width for providing a third effective refractive index upon application of a voltage with a predetermined magnitude across the third pn junction, wherein the third effective refractive index is between the first effective refractive index and the second effective refractive index.
21 . An optical ring modulator for use as a PAM-N modulator,
the optical ring modulator comprising:
a first optical waveguide which forms a bus waveguide; and
a ring waveguide optically coupled to the bus waveguide,
wherein, the ring waveguide comprises:
a first electrode region comprising a first metal oxide semiconductor capacitor (Moscap), the first electrode region having a first dopant concentration and a first oxide layer thickness for providing a first effective refractive index upon application of a voltage with a predetermined magnitude across the first Moscap; and
a second electrode region comprising a second Moscap, the second electrode region having a second dopant concentration and a second oxide layer thickness for providing a second effective refractive index upon application of the voltage with the predetermined magnitude across the second pn Moscap, and
wherein, upon application of the voltage with the predetermined magnitude, the effective refractive index of the first electrode region is approximately double the effective refractive index of the second electrode region such that the first electrode region forms a most significant bit of modulation and the second electrode region forms a least significant bit of modulation.
22 . The optical ring modulator of claim 21 in which the first dopant concentration is greater than the second dopant concentration.
23 . The optical ring modulator of claim 21 in which the first oxide layer thickness is narrower than the second oxide layer thickness.
24 . The optical ring modulator of claim 21 in which the first Moscap is configured to generate a first phase shift upon application of the voltage with the predetermined magnitude across the first Moscap.
25 . The optical ring modulator of claim 24 in which the second Moscap is configured to generate a second phase shift when the voltage with the predetermined magnitude is applied across the second Moscap, wherein the second phase shift is less than the first phase shift.
26 . The optical ring modulator of claim 21 in which the bus waveguide is fabricated on a silicon-on-insulator platform.
27 . The optical ring modulator of claim 21 in which the bus waveguide comprises separate input and output waveguides.
28 . The optical ring modulator of claim 21 in which the bus waveguide is non-continuous.
29 . The optical ring modulator of claim 21 in which, responsive to different voltages being applied to the first and second electrode regions, four different modulation states are provided by the optical ring modulator.
30 . The optical ring modulator of claim 21 further comprising a third electrode region comprising a third Moscap having a third dopant concentration and a third oxide layer thickness for providing a third effective refractive index upon application of a voltage with a predetermined magnitude across the third Moscap, wherein the third effective refractive index is between the first effective refractive index and the second effective refractive index.