DISPLAY DEVICE
The purpose of the present invention is to decrease the resistance of the drain and source in the TFT of the oxide semiconductor as well as to have stable Vd-Id characteristics of the TFT. The structure of the present invention is as follows: A display device having plural pixels including thin film transistors (TFT) having oxide semiconductor films comprising: a gate insulating film formed on the oxide semiconductor film, an aluminum oxide film formed on the gate insulating film, a gate electrode formed on the aluminum oxide film, a side spacer formed on both sides of the gate electrode, and an interlayer insulating film formed on the gate electrode, the side spacer, a drain and a source, wherein in a plan view, and in a direction from the drain to the source, a length of the gate electrode is shorter than a length of the aluminum oxide film.
1 . Method for manufacturing a display device having a thin film transistor comprising:
a step for forming an undercoat film over a substrate,
a step for forming a gate electrode over the undercoat,
a step for forming a first gate insulating film over the gate electrode,
a step for forming an oxide semiconductor film over the first gate insulating film,
a step for patterning the oxide semiconductor film,
a step for forming a second gate insulating film over the oxide semiconductor film and the first gate insulating film,
a step for forming an aluminum oxide film over the second gate insulating film,
a step for forming a second gate electrode made of metal over the second gate insulating film,
a step for removing the aluminum oxide film,
a step for forming a interlayer insulating film over the oxide semiconductor film and the second gate electrode,
a step for forming through holes in the interlayer insulating film, and
a step for forming a drain electrode and source electrode in the through holes to contact the oxide semiconductor film.
2 . Method for manufacturing the display device having a thin film transistor according to claim 1 , wherein
the first gate insulating film is formed by chemical vapor deposition.
3 . Method for manufacturing the display device having a thin film transistor according to claim 1 , wherein
the aluminum oxide film is removed by dry etching using Chlorine base gas.
4 . Method for manufacturing the display device having a thin film transistor according to claim 1 , wherein
the through hole is formed in an area in which the interlayer insulating film contacts the second gate insulating film, and the through hole is formed to penetrate the second gate insulating film.
5 . Method for manufacturing the display device having a thin film transistor according to claim 3 , wherein
the through hole is formed in an area in which the interlayer insulating film contacts the second gate insulating film, and the through hole is formed to penetrate the second gate insulating film.