Silicon Carbide Vapor Source Material for use in a Sublimation System for Growing Crystalline Silicon Carbide
A silicon carbide source material structure for use in a sublimation system for growing single crystal silicon carbide is provided. The silicon carbide source material structure may comprise a first layer and a second layer, the first layer being different from the second layer in at least one property.
1 . A silicon carbide source material structure for use in a sublimation system for growing single crystal silicon carbide, the silicon carbide source material structure comprising:
a first layer and a second layer, the first layer being different from the second layer in at least one property.
2 . The silicon carbide source material structure of claim 1 , wherein the property is silicon carbide polytype.
3 . The silicon carbide source material structure of claim 2 , wherein the first layer comprises 3C SiC and the second layer comprises 15R SiC.
4 . The silicon carbide source material structure of claim 2 , wherein the first layer comprises 3C SiC and the second layer comprises 4H SiC.
5 . The silicon carbide source material structure of claim 2 , wherein the first layer comprises 3C SiC and the second layer comprises 6H SiC.
6 . The silicon carbide source material structure of claim 2 , wherein the first layer comprises 3C SiC and the second layer comprises 21R SiC.
7 . The silicon carbide source material structure of claim 2 , wherein the first layer comprises 15R SiC and the second layer comprises 4H SiC.
8 . The silicon carbide source material structure of claim 2 , wherein the first layer comprises 15R SiC and the second layer comprises 6H SiC.
9 . The silicon carbide source material structure of claim 2 , wherein the first layer comprises 15R SiC and the second layer comprises 21R SiC.
10 . The silicon carbide source material structure of claim 2 , wherein the first layer comprises 4H SiC and the second layer comprises 6H SiC.
11 . The silicon carbide source material structure of claim 2 , wherein the first layer comprises 4H SiC and the second layer comprises 21R SiC.
12 . The silicon carbide source material structure of claim 2 , wherein the first layer comprises 6H SiC and the second layer comprises 21R SiC.
13 . The silicon carbide source material structure of claim 1 , wherein the property is material density of the silicon carbide.
14 . The silicon carbide source material structure of claim 13 , wherein the first layer comprises sintered or bound particles having a first average particle size and the second layer comprises sintered or bound particles having a second average particle size different from the first average particle size.
15 . The silicon carbide source material structure of claim 13 , wherein the first layer comprises a silicon carbide powder and the second layer comprises a solid structure.
16 . The silicon carbide source material structure of claim 13 , wherein a ratio of the material density of the second layer to the material density of the first layer is about 1.2 or more.
17 . The silicon carbide source material structure of claim 13 , wherein the first layer comprises graphite converted silicon carbide and the second layer comprises sintered or bound silicon carbide.
18 . The silicon carbide source material structure of claim 1 , wherein the property is the composition of the layer.
19 . The silicon carbide source material structure of claim 18 , wherein the first layer comprises silicon carbide and a dopant and the second layer does not contain a dopant.
20 . The silicon carbide source material structure of claim 19 , wherein the dopant comprises vanadium, aluminum, or boron.