COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR CIRCUIT, METHOD FOR FABRICATING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR CIRCUIT
Disclosed is a complementary metal-oxide semiconductor circuit including a n-type metal-oxide semiconductor thin-film transistor and a p-type metal-oxide semiconductor thin-film transistor. Each of the n-type metal-oxide semiconductor thin-film transistor and the p-type metal-oxide semiconductor thin-film transistor includes a semiconductor film, a gate insulating film over the semiconductor film, a gate electrode over the gate insulating film, an interlayer insulating film over the gate electrode, and a pair of terminals located over the interlayer insulating film and electrically connected to the semiconductor film. The semiconductor film of the p-type metal-oxide semiconductor thin-film transistor includes a fluorine ion.
1 . A complementary metal-oxide semiconductor circuit comprising:
a n-type metal-oxide semiconductor thin-film transistor and a p-type metal-oxide semiconductor thin-film transistor each comprising:
a semiconductor film;
a gate insulating film over the semiconductor film;
a gate electrode over the gate insulating film;
an interlayer insulating film over the gate electrode; and
a pair of terminals located over the interlayer insulating film and electrically connected to the semiconductor film,
wherein the semiconductor film of the p-type metal-oxide semiconductor thin-film transistor includes a fluorine ion.
2 . The complementary metal-oxide semiconductor circuit according to claim 1 ,
wherein, in each of the n-type metal-oxide semiconductor thin-film transistor and the p-type metal-oxide semiconductor thin-film transistor, the semiconductor film comprises:
a channel region overlapping the gate electrode;
a pair of low-concentration impurity regions sandwiching the channel region; and
a pair of source/drain regions sandwiching the pair of low-concentration impurity regions.
3 . The complementary metal-oxide semiconductor circuit according to claim 1 ,
wherein a concentration of the fluorine ion in the semiconductor film of the p-type metal-oxide semiconductor thin-film transistor is equal to or greater than 1×10 15 atoms/cm 3 and equal to or less than 1×10 20 atoms/cm 3 .
4 . The complementary metal-oxide semiconductor circuit according to claim 2 ,
wherein the fluorine ion is selectively included in the source/drain regions of the p-type metal-oxide semiconductor thin-film transistor.
5 . The complementary metal-oxide semiconductor circuit according to claim 1 , further comprising an undercoat under the n-type metal-oxide semiconductor thin-film transistor and the p-type metal-oxide semiconductor thin-film transistor,
wherein the undercoat includes the fluorine ion.
6 . An electronic device comprising a complementary metal-oxide semiconductor circuit comprising a n-type metal-oxide semiconductor thin-film transistor and a p-type metal-oxide semiconductor thin-film transistor each comprising:
a semiconductor film;
a gate insulating film over the semiconductor film;
a gate electrode over the gate insulating film;
an interlayer insulating film over the gate electrode; and
a pair or terminals located over the interlayer insulating film and electrically connected to the semiconductor film,
wherein the semiconductor film of the p-type metal-oxide semiconductor thin-film transistor includes a fluorine ion.
7 . The electronic device according to claim 6 ,
wherein, in each of the n-type metal-oxide semiconductor thin-film transistor and the p-type metal-oxide semiconductor thin-film transistor, the semiconductor film comprises:
a channel region overlapping the gate electrode;
a pair of low-concentration impurity regions sandwiching the channel region; and
a pair of source/drain regions sandwiching the pair of low-concentration impurity regions.
8 . The electronic device according to claim 6 ,
wherein a concentration of the fluorine ion in the semiconductor film of the p-type metal-oxide semiconductor thin-film transistor is equal to or greater than 1×10 15 atoms/cm 3 and equal to or less than 1×10 20 atoms/cm 3 .
9 . The electronic device according to claim 7 ,
wherein the fluorine ion is selectively included in the source/drain regions of the p-type metal-oxide semiconductor thin-film transistor.
10 . The electronic device according to claim 6 , further comprising an undercoat under the n-type metal-oxide semiconductor thin-film transistor and the p-type metal-oxide semiconductor thin-film transistor,
wherein the undercoat includes the fluorine ion.
11 . The electronic device according to claim 6 ,
wherein the electronic device is a display device.
12 . A fabrication method of a complementary metal-oxide semiconductor circuit, the fabrication method comprising:
forming an undercoat over a substrate;
forming a first semiconductor film and a second semiconductor film over the undercoat;
doping both edge portions of the first semiconductor film with a first dopant imparting n-type conductivity in a state where the second semiconductor film and a region between both the edge portions of the first semiconductor film are masked;
doping both edge portions of the second semiconductor film with a second dopant imparting p-type conductivity in a state where the first semiconductor film and a region between both the edge portions of the second semiconductor film are masked;
forming a gate insulating film over the first semiconductor film and the second semiconductor film;
forming, over the gate insulating film, a first gate electrode overlapping the first semiconductor film and exposing both the edge portions of the first semiconductor film and a second gate electrode overlapping the second semiconductor film and exposing both the edge portions of the second semiconductor film;
forming an interlayer insulating film overlapping the first gate electrode and the second gate electrode; and
forming, over the interlayer insulating film, a pair of electrodes electrically connected to the first semiconductor film and a pair of electrodes electrically connected to the second semiconductor film.
13 . The fabrication method according to claim 12 ,
wherein the second dopant includes boron and fluorine.
14 . The fabrication method according to claim 12 ,
wherein the second dopant includes at least one of a BF 2+ ion and a BF 2 + ion.
15 . The fabrication method according to claim 12 , further comprising:
doping the first semiconductor film with a third dopant imparting n-type conductivity using the first gate electrode as a mask; and
doping the second semiconductor film with a fourth dopant imparting p-type conductivity using the second gate electrode as a mask.
16 . The fabrication method according to claim 15 ,
wherein the third dopant and the fourth dopant are the same as each other.
17 . The fabrication method according to claim 12 , further comprising doping the first semiconductor film and the second semiconductor film with a fifth dopant imparting p-type conductivity before the doping with the first dopant and the second dopant.
18 . The fabrication method according to claim 13 ,
wherein the doping with the second dopant is performed such that a concentration of the fluorine ion in the second semiconductor film is equal to or greater than 1×10 15 atoms/cm 3 and equal to or less than 1×10 20 atoms/cm 3 .