SEMICONDUCTOR DEVICE
The purpose of the present invention is to prevent a decrease in light reflection characteristic and an increase in electric resistance due to oxidation of silver in a semiconductor device including an optical sensor in which silver is used for an anode of a photoconductive film. The present invention has a following structure to solve the problem: A semiconductor device includes a thin film transistor formed on a substrate 100. An electrode connected electrically to the thin film transistor is formed of a silver film 128. A first indium tin oxide (ITO) film 129 is formed on the silver film 128. An alumina (AlOx) film 130 is formed on the first ITO film 129.
1 . The semiconductor device comprising:
a thin film transistor formed on a substrate;
a first ITO film;
an alumina (AlOx) film; and
a photo sensor,
wherein the photo sensor includes a photodiode configured with an upper electrode, a photoconductive film, and a lower electrode, above the thin film transistor,
the photo sensor detects light from side of the upper electrode,
the upper electrode is formed from a silver film,
the first ITO film is formed on the silver film, and
the alumina (AlOx) film is formed on the first ITO film.
2 . The semiconductor device according to claim 1 ,
wherein a thickness of the first ITO film is 5 to 20 nm.
3 . The semiconductor device according to claim 1 ,
wherein a thickness of the silver film is 50 nm or less.
4 . The semiconductor device according to claim 3 ,
wherein the thickness of the silver film is 20 to 30 nm.
5 . The semiconductor device according to claim 1 ,
wherein a thickness of the alumina (AlOx) film is 10 to 50 nm.
6 . The semiconductor device according to claim 2 ,
wherein the first ITO film is an amorphous ITO film.
7 . The semiconductor device comprising:
a thin film transistor formed on a substrate;
a first ITO film; and
a photo sensor,
wherein the photo sensor includes a photodiode configured with an upper electrode, a photoconductive film, and a lower electrode, above the thin film transistor,
the photo sensor detects light from side of the upper electrode,
the upper electrode is formed from a silver film,
the first ITO film is formed on the silver film, and
the alumina (AlOx) film is formed on the first ITO film.