VEHICULAR DISPLAY ELEMENT HAVING A HIGH DENSITY LED ARRAY
A vehicular lighting system includes at least one light emitting diode chip mini-pixel that has (i) a multi-quantum well stack electrified by a p-type material, an n-type material, and a plurality of electrodes, (ii) a nano-pattern light extractor and (iii) a lateral light confinement distributed Bragg reflector mirror. The at least one light emitting diode chip mini-pixel emits light to illuminate an area exterior or interior of a vehicle equipped with the vehicular lighting system.
1 . A lighting system comprising:
at least one light emitting diode chip configured as a triangle primitive in an x-y direction and defining a thickness in a z direction, the at least one light emitting diode chip comprising:
a multi-quantum well (MQW) stack electrified by a p-type material, an n-type material, and a plurality of electrodes, the p-type material and the n-type material each positioned on a first side of the MQW stack;
a light wicking prism structure defining a boundary around the at least one light emitting diode chip; and
a transition positioned between the MQW stack and the light wicking prism structure.
2 . The lighting system of claim 1 , wherein the transition includes a layer of phosphor and an encapsulation material.
3 . The lighting system of claim 1 , wherein the transition defines a sapphire to air interface.
4 . The lighting system of claim 1 , wherein the MQW stack produces light that exits through a peripheral side of the triangle primitive and towards an interior side of the light wicking prism structure.
5 . The lighting system of claim 1 , wherein the p-type material defines a first area on the first side of the MQW stack and the n-type material defines a second area on the first side of the MQW stack, the second area less than the first area.
6 . The lighting system of claim 1 , further comprising:
a distributed Bragg reflector (DBR) mirror configured to increase luminance and force light upward through a thin film phosphor layer.
7 . The lighting system of claim 6 , wherein the DBR mirror is positioned below the MQW stack, and wherein the DBR mirror is produced by alternating high and low refractive index materials.
8 . The lighting system of claim 1 , wherein the triangle primitive further includes one or more nano-structure light extraction elements.
9 . The lighting system of claim 1 , wherein the triangle primitive further includes one or more nano-porous light confinement structures.
10 . A lighting system comprising:
a first light emitting diode chip configured as a triangle primitive in an x-y direction and defining a thickness in a z direction, the first light emitting diode chip comprising:
a multi-quantum well (MQW) stack electrified by a p-type material, an n-type material, and a plurality of electrodes, the p-type material and the n-type material each positioned on a first side of the MQW stack;
a light wicking prism structure defining a boundary around the first light emitting diode chip; and
a distributed Bragg reflector (DBR) mirror positioned below the MQW stack, wherein the DBR mirror is produced by alternating high and low refractive index materials.
11 . The lighting system of claim 10 , wherein the first light emitting diode chip further comprises:
a transition positioned between the MQW stack and the light wicking prism structure.
12 . The lighting system of claim 10 , wherein the p-type material defines a first area on the first side of the MQW stack and the n-type material defines a second area on the first side of the MQW stack, the second area less than the first area.
13 . The lighting system of claim 10 , wherein the p-type material defines a first geometric shape on the first side of the MQW stack and the n-type material defines a second geometric shape on the first side of the MQW stack, the second geometric shape varied from the first geometric shape.
14 . The lighting system of claim 10 , further comprising:
a second light emitting diode chip configured as a triangle primitive in an x-y direction and defining a thickness in a z direction, wherein the first light emitting diode chip and the second light emitting diode chip are individually addressed via a programmable micro-controller.
15 . The lighting system of claim 10 , wherein the triangle primitive further includes one or more nano-structure light extraction elements.
16 . A lighting system comprising:
at least one light emitting diode chip configured as a triangle primitive in an x-y direction and defining a thickness in a z direction, the at least one light emitting diode chip comprising:
a MQW stack electrified by a p-type material, an n-type material, and a plurality of electrodes, the p-type material and the n-type material each positioned on a first side of the MQW stack; and
a mirror recycler positioned along a second side of the second side of the MQW stack, wherein light emitted in a downward direction by the MQW stack is recycled by the mirror recycler.
17 . The lighting system of claim 16 , further comprising:
a light wicking prism structure defined by the at least one light emitting diode chip to encourage lateral light emerging from isotropic emitters of the at least one light emitting diode chip.
18 . The lighting system of claim 17 , further comprising:
a transition positioned between the MQW stack and the light wicking prism structure.
19 . The lighting system of claim 18 , wherein the transition includes a layer of phosphor and an encapsulation material.
20 . The lighting system of claim 18 , wherein the transition defines a sapphire to air interface.