SEMICONDUCTOR DEVICE AND METHOD OF FORMING MICRO INTERCONNECT STRUCTURES
A semiconductor device has a first semiconductor die and second semiconductor die with a conductive layer formed over the first semiconductor die and second semiconductor die. The second semiconductor die is disposed adjacent to the first semiconductor die with a side surface and the conductive layer of the first semiconductor die contacting a side surface and the conductive layer of the second semiconductor die. An interconnect, such as a conductive material, is formed across a junction between the conductive layers of the first and second semiconductor die. The conductive layer may extend down the side surface of the first semiconductor die and further down the side surface of the second semiconductor die. An extension of the side surface of the first semiconductor die can interlock with a recess of the side surface of the second semiconductor die. The conductive layer extends over the extension and into the recess.
1 . A semiconductor device, comprising:
a first semiconductor die coupled to a second semiconductor die;
a first conductive layer directly coupled to a side surface of the first semiconductor die;
a second conductive layer directly coupled to a side surface of the second semiconductor die, the second conductive layer directly coupled to the first conductive layer; and
an interconnect coupled directly to and over the first conductive layer and the second conductive layer;
wherein the side surface of the first semiconductor die contacts the side surface of the second semiconductor die.
2 . The device of claim 1 , wherein the interconnect includes a conductive material formed over a junction between the first conductive layer and the second conductive layer.
3 . The device of claim 1 , wherein the first conductive layer and the second conductive layer include one of a conductive epoxy or anisotropic conductive film.
4 . The device of claim 1 , further comprising a third semiconductor die directly coupled to the first semiconductor die.
5 . The device of claim 4 , further comprising a fourth semiconductor die directly coupled to the third semiconductor die and the second semiconductor die.
6 . The device of claim 1 , wherein the first conductive layer and the second conductive layer comprise one of Al, Sn, Ni, Au, Ag, Pb, Bi, Cu, solder, or any combination thereof.
7 . A semiconductor device, comprising:
a first semiconductor die comprising a first side, second side, third side, and fourth side;
a second die directly coupled to the first side;
a third die directly coupled to the second side;
a fourth die directly coupled to the third side;
a fifth die directly coupled to the fourth side;
a first conductive layer directly coupled to the first side;
a second conductive layer directly coupled to the second side;
a third conductive layer directly coupled to the third side;
a fourth conductive layer directly coupled to the fourth side;
a fifth conductive layer directly coupled to a side of the second semiconductor die;
a sixth conductive layer directly coupled to a side of the third semiconductor die;
a seventh conductive layer directly coupled to a side of the fourth semiconductor die; and
an eighth conductive layer directly coupled to a side of the fifth semiconductor die;
wherein the first conductive layer is directly coupled to the fifth conductive layer, the second conductive layer is directly coupled to the sixth conductive layer, the third conductive layer is directly coupled to the seventh conductive layer, and the fourth conductive layer is directly coupled to the eighth conductive layer.
8 . The device of claim 7 , further comprising a first interconnect directly coupled to the first conductive layer and fifth conductive layer, a second interconnect directly coupled to the second conductive layer and the sixth conductive layer, a third interconnect directly coupled to the third conductive layer and the seventh conductive layer, and a fourth interconnect directly coupled to the fourth conductive layer and the eighth conductive layer.
9 . The device of claim 7 , wherein each conductive layer includes a conductive epoxy or anisotropic conductive film.
10 . The device of claim 7 , wherein the first semiconductor die has more than four side surfaces.
11 . The device of claim 7 , wherein an outer perimeter of the first semiconductor die comprises a shape of a cross.
12 . The device of claim 7 , wherein an outer perimeter of the first semiconductor die comprises a shape of a hexagon.
13 . The device of claim 7 , wherein each conductive layer comprises one of Al, Sn, Ni, Au, Ag, Pb, Bi, Cu, solder, or any combination thereof.
14 . The device of claim 7 , wherein the second semiconductor die, the third semiconductor die, the fourth semiconductor die, and the fifth semiconductor die each comprise two side surfaces directly coupled to the first semiconductor die.
15 . A semiconductor device, comprising:
a first semiconductor die directly coupled to a second semiconductor die;
a first conductive layer directly coupled to a side surface of the first semiconductor die;
a second conductive layer directly coupled to a side surface of the second semiconductor die, the second conductive layer directly coupled to the first conductive layer;
a third semiconductor die directly coupled to a fourth semiconductor die;
a third conductive layer directly coupled to a side surface of the third semiconductor die;
a fourth conductive layer directly coupled to a side surface of the fourth semiconductor die, the third conductive layer directly coupled to the fourth conductive layer.
16 . The device of claim 15 , further comprising a fifth semiconductor die directly coupled to a sixth semiconductor die.
17 . The device of claim 15 , wherein the semiconductor device includes 4 pairs of semiconductor die.
18 . The device of claim 15 , wherein the semiconductor device includes 6 pairs of semiconductor die.
19 . The device of claim 15 , wherein each conductive layer is patterned into separated portions.
20 . The device of claim 15 , wherein each conductive layer comprises one of a conductive epoxy or anisotropic conductive film.