SEMICONDUCTOR DEVICE
A semiconductor device includes a glass substrate, a base layer on the glass substrate, and a thin film transistor on the base layer, wherein the base layer has a structure in which a first insulating layer made of silicon oxide, a second insulating layer made of silicon nitride, a conductive layer, and a third insulating layer made of silicon oxide are stacked in this order from the glass substrate side. The base layer may have a fourth insulating layer made of silicon oxide between the second insulating layer and the conductive layer.
1 . A semiconductor device comprising:
a glass substrate;
a base layer on the glass substrate; and
a thin film transistor on the base layer, wherein
the base layer has a structure in which a first insulating layer including silicon oxide, a second insulating layer including silicon nitride, a conductive layer, and a third insulating layer including silicon oxide are stacked in this order from the glass substrate side.
2 . The semiconductor device according to claim 1 , wherein the conductive layer includes a metal.
3 . The semiconductor device according to claim 2 , wherein the base layer includes a fourth insulating layer including silicon oxide between the second insulating layer and the conductive layer.
4 . A semiconductor device comprising:
a glass substrate;
a base layer on the glass substrate; and
an n-channel type thin film transistor and a p-channel type thin film transistor on the base layer, wherein
the base layer has a structure in which a first insulating layer including silicon oxide, a second insulating layer including silicon nitride, and a third insulating layer including oxide are stacked in this order from the glass substrate side,
the base layer includes a first light-shielding layer overlapping the n-channel type thin film transistor, and
the first light-shielding layer is conductive and is arranged between the second insulating layer and the third insulating layer.
5 . The semiconductor device according to claim 4 , wherein the base layer includes a second light-shielding layer overlapping the p-channel type thin film transistor, and
the second light-shielding layer is arranged between the substrate and the first insulating layer.