DESIGN TO FABRICATED LAYOUT CORRELATION
In an integrated circuit (IC) assessment method, an artificial intelligence (AI) component comprising at least one artificial neural network (ANN) is trained to transform layout rendering tiles of a rendering of a reference IC into corresponding reference layout image tiles extracted from at least one layout image of the reference IC. Using the trained AI component, standard cell layout renderings of a library of GDSII or OASIS standard cell layout renderings are transformed into as-fabricated standard cell layout renderings forming a library of as fabricated standard cell layout renderings. Instantiated standard cells and their placements in the layout image of an IC-under-test are identified by matching the instantiated standard cells with corresponding as-fabricated standard cell layout renderings retrieved from the library of as fabricated standard cell layout renderings.
1 . An integrated circuit (IC) assessment device for assessing an IC-under-test fabricated by a particular IC fabrication foundry, the IC assessment device comprising:
an electronic processor; and
a non-transitory storage medium storing:
a library of foundry-specific standard cell layout renderings constructed for the particular IC fabrication foundry; and
instructions readable and executable by the electronic processor to identify instantiated standard cells and their placements in a layout image of the IC-under-test by matching the instantiated standard cells with corresponding foundry-specific standard cell layout renderings retrieved from the library of foundry-specific standard cell layout renderings.
2 . The IC assessment device of claim 1 , wherein the foundry-specific standard cell layout renderings of the library of foundry-specific standard cell layout renderings correspond to standard cell layout renderings of a library of standard cell layout renderings, and the standard cell layout renderings have rectilinear corners and the foundry-specific standard cell layout renderings have rounded corners whose rounding is optimized for the particular IC fabrication foundry.
3 . The IC assessment device of claim 1 , wherein the layout image of the IC-under-test comprises a two-dimensional (2D) layout image acquired by a nondestructive process or a three-dimensional (3D) layout image formed by stacking a plurality of layer images of the IC-under-test acquired by a destructive delayering process.
4 . The IC assessment device of claim 1 , wherein the IC assessment method further includes:
determining connectivity of the instantiated standard cells using the layout image of the IC-under-test or a layout rendering of the IC-under-test generated from the layout image of the IC-under-test; and
generating a netlist for the IC-under-test based on the instantiated standard cells and the connectivity.
5 . The IC assessment device of claim 1 , further comprising:
a microscope configured to acquire the layout image of the IC-under-test.
6 . The IC assessment device of claim 1 , wherein the foundry-specific standard cell layout renderings of the library of foundry-specific standard cell layout renderings have diffuse edges optimized for the particular IC fabrication foundry.
7 . The IC assessment device of claim 1 , wherein the foundry-specific standard cell layout renderings of the library of foundry-specific standard cell layout renderings have rounded corners optimized for the particular IC fabrication foundry.
8 . The IC assessment device of claim 1 , wherein the matching of the instantiated standard cells with the corresponding foundry-specific standard cell layout renderings does not include applying image softening to the instantiated standard cells.
9 . A non-transitory storage medium storing:
a library of foundry-specific standard cell layout renderings for a particular integrated circuit (IC) fabrication foundry, wherein the foundry-specific standard cell layout renderings have rounded corners optimized for the particular IC fabrication foundry; and
instructions readable and executable by an electronic processor to perform an IC assessment method including:
converting a layout image of an IC-under-test fabricated by the particular IC fabrication foundry to a layout rendering of the IC-under-test; and
identifying instantiated standard cells and their placements in the IC-under-test by matching instantiated standard cells in the layout rendering of the IC-under-test with corresponding foundry-specific standard cell layout renderings retrieved from the library of foundry-specific standard cell layout renderings.
10 . The non-transitory storage medium of claim 9 , wherein the IC assessment method further includes:
determining connectivity of the instantiated standard cells using the layout rendering of the IC-under-test; and
generating a netlist for the IC-under-test based on the instantiated standard cells and the connectivity.
11 . The non-transitory storage medium of claim 9 , wherein the layout image of the IC-under-test comprises one of:
(i) a two-dimensional (2D) layout image acquired by a nondestructive process, or
(ii) a three-dimensional (3D) layout image formed by stacking a plurality of layer images of the IC-under-test acquired in conjunction with a destructive delayering process.
12 . The non-transitory storage medium of claim 9 , wherein the foundry-specific standard cell layout renderings have diffuse edges optimized for the particular IC fabrication foundry.
13 . The non-transitory storage medium of claim 9 , wherein the matching of the instantiated standard cells with the corresponding foundry-specific standard cell layout renderings does not include applying image softening to the instantiated standard cells.
14 . An integrated circuit (IC) assessment method for assessing an IC-under-test fabricated by a particular IC fabrication foundry, the IC assessment method comprising
providing a library of foundry-specific standard cell layout renderings, wherein the foundry-specific standard cell layout renderings have rounded corners optimized for the particular IC fabrication foundry; and
identifying instantiated standard cells and their placements in a layout image of the IC-under-test by matching the instantiated standard cells with corresponding foundry-specific standard cell layout renderings retrieved from the library of foundry-specific standard cell layout renderings.
15 . The method of claim 14 , wherein the identifying further includes:
converting the layout image of the IC-under-test to a layout rendering of the IC-under-test; and
identifying the instantiated standard cells and their placements in the layout image of the IC-under-test by matching the instantiated standard cells in the converted layout rendering of the IC-under-test with the corresponding foundry-specific standard cell layout renderings retrieved from the library of foundry-specific standard cell layout renderings.
16 . The method of claim 14 , further comprising:
determining connectivity of the instantiated standard cells using the layout image of the IC-under-test or a layout rendering of the IC-under-test generated from the layout image of the IC-under-test; and
generating a netlist for the IC-under-test based on the instantiated standard cells and the connectivity.
17 . The method of claim 14 , wherein the foundry-specific standard cell layout renderings have diffuse edges optimized for the particular IC fabrication foundry.
18 . The method of claim 14 , wherein the matching of the instantiated standard cells with the corresponding foundry-specific standard cell layout renderings does not include applying image softening to the instantiated standard cells.
19 . The method of claim 14 , further comprising:
acquiring the layout image of the IC-under-test using a microscope.