READ SOURCE DETERMINATION
Apparatuses and methods for read source determination are provided. One example apparatus can include a controller configured to determine a source for read requests and to direct read requests for a first portion of data to a first block of single level memory cells in response to an amount of a second portion of data written to a second block of single level memory cells being less than a threshold amount, and direct read requests for the first portion of data to a first block of quad level memory cells in response to the amount of the second portion of data written to the second block of single level memory cells being at least the threshold amount.
1 . An apparatus, comprising:
an array of memory cells including a first block, a second block, a third block, and a fourth block of single level memory cells and a first block of quad level memory cells; and
a controller coupled to the array of memory cells, wherein the controller is configured to:
update a read source for a first read request for a first portion of data to a first block of quad level memory cells in response to an amount of a second portion of data written to the second block of single level memory cells being at least a threshold amount.
2 . The apparatus of claim 1 , wherein the controller is configured to update the read source for the first read request for the first portion of data to the first block of quad level memory cells in response to a write operation writing the first portion of data to the first block of quad level memory cells being complete.
3 . The apparatus of claim 1 , wherein the controller is configured to update a read source for a second read request for a second portion of data to the first block of quad level memory cells in response to an amount of a third portion of data written to the third block of single level memory cells being at least the threshold amount.
4 . The apparatus of claim 1 , wherein the controller is configured to update the read source for the second read request for the second portion of data to the first block of quad level memory cells in response to a write operation writing the second portion of data to the first block of quad level memory cells being complete.
5 . The apparatus of claim 1 , wherein the controller is configured to update a read source for a third read request for a third portion of data to the first block of quad level memory cells in response to an amount of a fourth portion of data written to the fourth block of single level memory cells being at least the threshold amount.
6 . The apparatus of claim 1 , wherein the controller is configured to update the read source for the third read request for the third portion of data to the first block of quad level memory cells in response to a write operation writing the third portion of data to the first block of quad level memory cells being complete.
7 . The apparatus of claim 1 , wherein the controller is configured to update a read source for a fourth read request for a fourth portion of data to the first block of quad level memory cells in response to a write operation writing the fourth portion of data to the first block of quad level memory cells being complete.
8 . The apparatus of claim 7 , wherein the controller is configured to erase the first, second, third, and fourth single level memory cells in response to the write operation writing the fourth portion of data to the first block of quad level memory cells being complete.
9 . An apparatus, comprising:
an array of memory cells including a first block, a second block, a third block, and a fourth block of single level memory cells and a first block of quad level memory cells; and
a controller coupled to the array of memory cells, wherein the controller is configured to:
perform write operations in the array of memory cells to write a first portion of data to the first block of single level memory cells and to the first block of quad level memory cells, write a second portion of data to the second block of single level memory cells and to the first block of quad level memory cells, write a third portion of data to the third block of single level memory cells and to the first block of quad level memory cells, and write a fourth portion of data to the fourth block of single level memory cells and to the first block of quad level memory cells;
direct read requests for the first portion of data to the first block of single level memory cells in response to less than a threshold amount of the second portion of data being written to the second block of single level memory cells; and
direct read requests for the first portion of data to the first block of quad level memory cells in response at least the threshold amount of the second portion of data being written to the second block of single level memory cells.
10 . The apparatus of claim 9 , wherein the controller is configured to:
direct read requests for the second portion of data to the second block of single level memory cells in response to less than a threshold amount of the third portion of data being written to the third block of single level memory cells; and
direct read requests for the second portion of data to the first block of quad level memory cells in response at least the threshold amount of the third portion of data being written to the third block of single level memory cells.
11 . The apparatus of claim 9 , wherein the controller is configured to:
direct read requests for the third portion of data to the third block of single level memory cells in response to less than a threshold amount of the fourth portion of data being written to the fourth block of single level memory cells; and
direct read requests for the third portion of data to the first block of quad level memory cells in response at least the threshold amount of the fourth portion of data being written to the fourth block of single level memory cells.
12 . The apparatus of claim 9 , wherein the controller is configured to:
direct read requests for the fourth portion of data to the fourth block of single level memory cells in response to a write operation writing the fourth portion of data to the first block of quad level memory cells being incomplete; and
direct read requests for the fourth portion of data to the first block of quad level memory cells in response the write operation writing the fourth portion of data to the first block of quad level memory cells being complete.
13 . The apparatus of claim 9 , wherein the controller is configured to erase the first block of single level memory cells in response to a write operation writing the first portion of data to the first block of quad level memory cells being complete.
14 . The apparatus of claim 9 , wherein the threshold amount is at least 25% of a particular portion of data being written to the first block of quad level memory cells.
15 . A method, comprising:
performing a read operation in a memory array by writing a first portion of data to a first block of single level memory cells and to a first block of quad level memory cells, writing a second portion of data to a second block of single level memory cells and to the first block of quad level memory cells, writing a third portion of data to a third block of single level memory cells and to the first block of quad level memory cells, and writing a fourth portion of data to a fourth block of single level memory cells and to the first block of quad level memory cells; and
updating a read source for a first read request for the first portion of data to the first block of quad level memory cells in response to an amount of the second portion of data written to the second block of single level memory cells being at least a threshold amount.
16 . The method of claim 15 , further including updating a read source for a second read request for the second portion of data to the first block of quad level memory cells in response to an amount of the third portion of data written to the third block of single level memory cells being at least the threshold amount.
17 . The method of claim 15 , further including updating a read source for a third read request for the third portion of data to the first block of quad level memory cells in response to an amount of the fourth portion of data written to the fourth block of single level memory cells being at least the threshold amount.
18 . The method of claim 15 , further including updating a read source for a fourth read request for a fourth portion of data to the first block of quad level memory cells in response to completing writing the fourth portion of data to the first block of quad level memory cells.
19 . The method of claim 15 , further including erasing the first, second, third, and fourth single level memory cells in response to completing writing the fourth portion of data to the first block of quad level memory cells.
20 . The method of claim 15 , further including updating the read source for the first read request for the first portion of data to the first block of quad level memory cells in response completing writing the first portion of data to the first block of quad level memory cells.