IP Library Patent Application 19108504
Patent Application
App. No. 19/108,504

Gas Separation Membranes

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Patent No.
US None
App. No.
19/108,504
Abstract

A gas separation membrane comprising: (i) a porous substrate: (ii) a gutter layer comprising a cross-linked polysiloxane polymer; (iii) a discriminating layer comprising at least 60 w/w % of ethylene oxide (EO) groups and at least 0.15 mmol/g of thioether groups; and (iv) optionally a protective layer comprising a cross-linked polysiloxane polymer; wherein: (a) the gutter layer has an average thickness of less than 2.5 μm; and (b) the discriminating layer has an average thickness of greater than 0.2 μm and less than 5 μm.

Claims (20)

1 - 9 . (canceled)

10 . A gas separation membrane comprising:

(i) a porous substrate;

(ii) a gutter layer comprising a cross-linked polysiloxane polymer;

(iii) a discriminating layer comprising at least 60 w/w % of ethylene oxide (EO) groups and at least 0.15 mmol/g of thioether groups; and

(iv) optionally a protective layer comprising a cross-linked polysiloxane polymer;

wherein:

(a) the gutter layer has an average thickness of less than 2.5 μm; and

(b) the discriminating layer has an average thickness of greater than 0.2 μm and less than 5 μm;

(c) the gas membrane has a H 2 S permeance >400 GPU.

11 . The gas separation membrane according to claim 10 wherein the discriminating layer has an average thickness between 0.3 μm and 3 μm.

12 . The gas separation membrane according to claim 10 wherein said discriminating layer comprising thioether groups between 0.15 and 0.60 mmol/g.

13 . The gas separation membrane according to claim 10 wherein the thioether groups are of the formula —CH 2 —S—CH 2 —.

14 . The gas separation membrane according to claim 10 wherein the porous substrate comprises polyacrylonitrile, polysulphone, polyvinylidenefluoride, polyether ether ketone or polytetrafluoroethylene.

15 . A process for preparing a gas separation membrane having a H 2 S permeance >400 GPU comprising the steps of:

(i) forming a gutter layer of average thickness of less than 2.5 μm on a porous substrate;

(ii) forming on the gutter layer a discriminating layer comprising at least 60 w/w % of EO groups and at least 0.15 mmol/g of thioether groups, and having an average thickness greater than 0.2 μm and less than 5; and

(iii) optionally forming on the discriminating layer a protective layer comprising a cross-linked polysiloxane polymer.

16 . A gas separation module comprising a gas separation membrane according to claim 10 .

17 . The gas separation module according to claim 16 wherein the gas separation membrane is in the form of a flat sheet, a spiral-wound sheet or a hollow-fibre.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 17, 2026
From: YESTAR ADVANCED MATERIALS (HK) CO., LIMITED
To: YESTAR ADVANCED MATERIALS (SUZHOU) CO., LTD.
Reel/Frame 076045/0973 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 29, 2026
From: FUJIFILM CORPORATION; FUJIFILM MANUFACTURING EUROPE B.V.
To: YESTAR ADVANCED MATERIALS (HK) CO., LIMITED
Reel/Frame 075440/0524 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 4, 2025
From: VAN KESSEL, PETRUS HENRICUS MARIA; ITAMI, YUJIRO
To: FUJIFILM MANUFACTURING EUROPE B.V.; FUJIFILM CORPORATION
Reel/Frame 070393/0261 →