OPTOELECTRONIC SEMICONDUCTOR COMPONENTS
An optoelectronic semiconductor component is provided. The optoelectronic semiconductor component includes a base, an electrical connection structure located on the base, a plurality of light-emitting chips located on the electrical connection structure, a plurality of wavelength converters located on the light-emitting chips, and a separation structure located on the electrical connection structure and covering the light-emitting chips and the wavelength converters. The base includes a base material and a plurality of conductor parts. The base material covers the conductor parts which penetrate the base material. The electrical connection structure includes an intermediate part and a plurality of metal parts The intermediate part covers the metal parts. A part of the conductor parts of the base extends into the electrical connection structure and are electrically connected to the metal parts of the electrical connection structure. The metal parts extend into the separation structure and are electrically connected to the light-emitting chips.
1 . An optoelectronic semiconductor component, comprising:
a base includes a base material and a plurality of conductive parts, the base material covers the conductive parts and the conductive parts penetrate the base material;
an electrical connection structure locates on the base and includes an intermediate part and a plurality of metal parts, and the intermediate part covers the metal parts;
a plurality of light emitting chips locate on the electrical connection structure;
a plurality of wavelength conversion members locates on the light emitting chips, each one of the wavelength conversion members covers a respective one of the light emitting chips; and
a separation structure locates on the electrical connection structure and covers the light emitting chips and the wavelength conversion members;
wherein some of the conductive parts of the base extend into the intermediate part to electrically connect to the metal parts, and the metal parts extend into the separation structure to electrically connect to the light emitting chips.
2 . The optoelectronic semiconductor component as claimed in claim 1 , wherein
the base further includes a plurality of bonding pads which are electrically connected to one of the conductive parts respectively, and the conductive parts are between the bonding pads and the electrical connection structure.
3 . The optoelectronic semiconductor component as claimed in claim 1 , wherein
each one of the light emitting chips including a light emitting structure and an electrode structure, the electrode structure is between the light emitting structure and the electrical connection structure, the light emitting structure has an upper surface, a lower surface opposite to the upper surface, and a side surface between the upper surface and the lower surface, wherein each one of the wavelength conversion members covers the upper surface of the respective one of the light emitting chips.
4 . The optoelectronic semiconductor component as claimed in claim 1 , wherein
at least one of the light emitting chips is partially embedded in one of the wavelength conversion members covers thereon.
5 . The optoelectronic semiconductor component as claimed in claim 1 , further including a bonding layer between one of the wavelength conversion members and the respective one of the light emitting chips.
6 . The optoelectronic semiconductor component as claimed in claim 5 , wherein
the respective one of the light emitting chips is partially embedded in the bonding layer.
7 . The optoelectronic semiconductor component as claimed in claim 1 , wherein
the separation structure reflects the light emitted from the light emitting chips.
8 . The optoelectronic semiconductor component as claimed in claim 1 , wherein
the separation structure absorbs the light emitted from the light emitting chips.
9 . The optoelectronic semiconductor component as claimed in claim 1 , wherein
the separation structure includes fillers.
10 . The optoelectronic semiconductor component as claimed in claim 1 , wherein
the separation structure includes multilayers.
11 . The optoelectronic semiconductor component as claimed in claim 1 , wherein
the material of the separation structure is the same as that of the base material.
12 . The optoelectronic semiconductor component as claimed in claim 3 , wherein
the light emitting structure includes a substrate and an epitaxial stack between the substrate and the electrode structure.
13 . The optoelectronic semiconductor component as claimed in claim 3 , wherein
the light emitting structure includes an epitaxial stack and the upper surface of the light emitting structure is composed of the epitaxial stack.
14 . The optoelectronic semiconductor component as claimed in claim 1 , wherein
each of the wavelength conversion members has a top surface exposed from the separation structure.
15 . The optoelectronic semiconductor component as claimed in claim 14 , wherein
in a top view of the optoelectronic semiconductor component, a plurality of the top surfaces of the wavelength conversion members are arranged in an array.
16 . The optoelectronic semiconductor component as claimed in claim 14 , wherein
two adjacent top surfaces are separated from each other by the separation structure.
17 . The optoelectronic semiconductor component as claimed in claim 14 , wherein
a plurality of the top surfaces of the wavelength conversion members serves as a plurality of emission surfaces of the optoelectronic semiconductor component.
18 . The optoelectronic semiconductor component as claimed in claim 1 , wherein
each of the metal parts connects to the respective one of the light emitting chips.
19 . The optoelectronic semiconductor component as claimed in claim 18 , wherein
each of the metal parts has a first metal part and a second metal part.
20 . The optoelectronic semiconductor component as claimed in claim 1 , wherein
all of the first metal parts are connected to each other and all of the second metal parts are separated from each other.