SENSOR-EMBEDDED DISPLAY PANEL AND ELECTRONIC DEVICE
A sensor-embedded display panel includes a substrate, a light emitting element on the substrate and including a light emitting layer, and a light absorption sensor on the substrate and including a light absorbing layer arranged in parallel with the light emitting layer along an in-plane direction of the substrate. The light absorbing layer is configured to absorb light of a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, or any combination thereof. The light emitting layer includes a first organic material and the light absorbing layer includes a second organic material. A difference between respective sublimation temperatures of the first and second organic materials is less than or equal to about 150° C., wherein each sublimation temperature is a temperature at which a weight reduction of 10% relative to the initial weight occurs during thermogravimetric analysis under an ambient pressure of about 10 Pa or less.
1 . A light absorption sensor, comprising:
a pair of electrodes; and
a light absorbing layer between the pair of electrodes,
wherein the light absorbing layer includes
a p-type semiconductor, the p-type semiconductor being configured to selectively absorb light of any one of a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, or an infrared wavelength spectrum, and
an n-type semiconductor, the n-type semiconductor forming a pn junction with the p-type semiconductor,
wherein the n-type semiconductor is represented by Chemical Formula 1A or 1B:
wherein, in Chemical Formulas 1A and 1B,
R 1 to R 4 , R a1 , and R a2 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, a halogen, a cyano group, or any combination thereof, and
at least one of R a1 or R a2 is a halogen; a cyano group; a halogen-substituted C1 to C30 alkyl group; a halogen-substituted C6 to C30 aryl group; a halogen-substituted C3 to C30 heterocyclic group; a cyano-substituted C1 to C30 alkyl group; a cyano-substituted C6 to C30 aryl group; a cyano-substituted C3 to C30 heterocyclic group; a substituted or unsubstituted pyridinyl group; a substituted or unsubstituted pyrimidinyl group; a substituted or unsubstituted triazinyl group; a substituted or unsubstituted pyrazinyl group; a substituted or unsubstituted quinolinyl group; a substituted or unsubstituted isoquinolinyl group; a substituted or unsubstituted quinazolinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted pyridinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted pyridinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted pyrimidinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted pyrimidinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted triazinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted triazinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted pyrazinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted pyrazinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted quinolinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted quinolinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted isoquinolinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted isoquinolinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted quinazolinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted quinazolinyl group; or any combination thereof.
2 . The light absorption sensor of claim 1 , wherein the p-type semiconductor is represented by Chemical Formula 2:
wherein, in Chemical Formula 2,
X is O, S, Se, Te, SO, SO 2 , CR b R c , or SiR d R e ,
Ar is a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or a fused ring of two or more thereof,
Ar 1a and Ar 2a are each independently a substituted or unsubstituted C6 to C30 aryl(ene) group or a substituted or unsubstituted C3 to C30 heteroaryl(ene) group,
R 1a to R 3a and R b to R e are each independently hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl(ene) group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl(ene) group, a substituted or unsubstituted C3 to C30 heteroaryl(ene) group, a halogen, a cyano group, or any combination thereof, and
Ar 1a , Ar 2a , R 1a , and R 2a are each independently present, or two adjacent ones of Ar 1a , Ar 2a , R 1a , or R 2a are bonded to each other to form a ring.
3 . The light absorption sensor of claim 2 , wherein the p-type semiconductor is represented by Chemical Formula 2A or 2B:
wherein, in Chemical Formulas 2A and 2B,
X is O, S, Se, Te, SO, SO 2 , CR b R c , or SiR d R e , Ar is a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or a fused ring of two or more thereof,
Ar 1a and Ar 2a are each independently a substituted or unsubstituted C6 to C30 arylene group or a substituted or unsubstituted C3 to C30 heteroarylene group,
L and Z are each independently a single bond, O, S, Se, Te, SO, SO 2 , CR f R g , SiR h R i , GeR j R k , NR l , a substituted or unsubstituted C1 to C30 alkylene group, a substituted or unsubstituted C3 to C30 cycloalkylene group, a substituted or unsubstituted C6 to C30 arylene group, or any combination thereof, and
R 1a , R 2a , R 3a , and R b to R l are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, or any combination thereof.
4 . An electronic device comprising the light absorption sensor of claim 1 .
5 . A light absorption sensor, comprising:
a pair of electrodes; and
a light absorbing layer between the pair of electrodes,
wherein the light absorbing layer includes a first organic material and a second organic material that forms a pn junction with the first organic material, and
wherein a difference between respective sublimation temperatures of the first organic material and the second organic material is about 0° C. to about 150° C., wherein each sublimation temperature of each given organic material is a temperature at which a weight reduction of 10% relative to an initial weight of the given organic material occurs during thermogravimetric analysis under an ambient pressure of about 10 Pa or less.
6 . The light absorption sensor of claim 5 , wherein
the first organic material is represented by Chemical Formula 1:
wherein, in Chemical Formula 1,
X 1 and X 2 are each independently O or NR a , and
R 1 to R 4 and R a are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, a halogen, a cyano group, or any combination thereof, and
the second organic material is represented by Chemical Formula 2:
wherein, in Chemical Formula 2,
X is O, S, Se, Te, SO, SO 2 , CR b R c , or SiR d R e ,
Ar is a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or a fused ring of two or more thereof,
Ar 1a and Ar 2a are each independently a substituted or unsubstituted C6 to C30 aryl(ene) group or a substituted or unsubstituted C3 to C30 heteroaryl(ene) group,
R 1a to R 3a and R b to R e are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, or any combination thereof, and
Ar 1a , Ar 2a , R 1a and R 2a are each independently present, or two adjacent ones of Ar 1a , Ar 2a , R 1a or R 2a are bonded to each other to form a ring.