ION IMPLANTER AND ION IMPLANTATION METHOD
An ion implanter includes an ion source that generates ions, an extraction unit that extracts the ions from the ion source to generate an ion beam, a mass spectrometry unit that deflects the ion beam in a horizontal direction, a beam scanning unit that is configured to perform reciprocating scanning in a scanning direction, which is different from the horizontal direction, with the ion beam having passed through the mass spectrometry unit to generate a scanning beam, and a holding device that is configured to hold a workpiece and to reciprocate the workpiece, which is held by the holding device, in a direction crossing the scanning beam.
1 . An ion implanter comprising:
an ion source that generates ions;
an extraction unit that extracts the ions from the ion source to generate an ion beam;
a mass spectrometry unit that deflects the ion beam in a horizontal direction;
a beam scanning unit that is configured to perform reciprocating scanning in a scanning direction, which is different from the horizontal direction, with the ion beam having passed through the mass spectrometry unit to generate a scanning beam; and
a holding device that is configured to hold a workpiece and to reciprocate the workpiece, which is held by the holding device, in a direction crossing the scanning beam.
2 . The ion implanter according to claim 1 ,
wherein the mass spectrometry unit includes a magnet device that applies a magnetic field, which is parallel to a vertical direction, to the ion beam.
3 . The ion implanter according to claim 1 , further comprising:
a magnetic shield that is provided between the extraction unit and the mass spectrometry unit and includes a passage opening through which the ion beam passes.
4 . The ion implanter according to claim 1 , further comprising:
a beam shaping unit that is provided between the mass spectrometry unit and the beam scanning unit and includes at least one lens device for adjusting at least one of a cross-sectional shape and a convergence/divergence angle of the ion beam.
5 . The ion implanter according to claim 1 ,
wherein the ion source includes a front slit through which the ions extracted by the extraction unit pass, and
an opening width of the front slit in the horizontal direction is larger than an opening width of the front slit in a vertical direction.
6 . The ion implanter according to claim 5 ,
wherein the ion source includes an arc chamber that includes an internal space and the front slit for extracting the ions from plasma generated in the internal space, and a magnet device that applies a magnetic field parallel to the horizontal direction to the internal space.
7 . The ion implanter according to claim 5 ,
wherein the extraction unit includes an extraction electrode including an extraction opening through which the ion beam passes, and
an opening width of the extraction opening in the horizontal direction is larger than an opening width of the extraction opening in the vertical direction.
8 . The ion implanter according to claim 1 ,
wherein the holding device is configured to reciprocate the workpiece, which is held by the holding device, in the horizontal direction.
9 . The ion implanter according to claim 1 ,
wherein the scanning direction is a direction within 45 degrees from a vertical direction.
10 . The ion implanter according to claim 1 ,
wherein the scanning direction is a vertical direction.
11 . The ion implanter according to claim 1 , further comprising:
a beam collimation unit that is provided on a downstream side of the beam scanning unit and collimates the scanning beam.
12 . The ion implanter according to claim 1 , further comprising:
an energy filter unit that includes a deflector deflecting the scanning beam in the horizontal direction and an energy resolving aperture provided on a downstream side of the deflector.
13 . The ion implanter according to claim 12 ,
wherein the deflector includes a pair of electrodes that faces each other with the scanning beam interposed therebetween, and a power supply that applies a DC voltage to the pair of electrodes.
14 . The ion implanter according to claim 13 ,
wherein the pair of electrodes of the deflector is disposed to face each other in the horizontal direction.
15 . The ion implanter according to claim 13 ,
wherein the pair of electrodes of the deflector is disposed to face each other in a direction perpendicular to the scanning direction.
16 . An ion implantation method comprising:
generating ions using an ion source;
extracting the ions from the ion source to generate an ion beam;
deflecting the ion beam in a horizontal direction to perform mass spectrometry;
performing reciprocating scanning in a scanning direction, which is different from the horizontal direction, with the ion beam having been subjected to the mass spectrometry to generate a scanning beam; and
reciprocating a workpiece in a direction crossing the scanning beam.