Phase-change electrically-controlled photonic neuron device and preparation method and application thereof
View Patent ↗The invention belongs to the field related to optoelectronic technology and discloses a novel phase-change electrically-controlled photonic neuron device and a preparation method and an application thereof. The device includes a substrate, a waveguide layer, a phase-change material layer, and a heating layer. A chemical formula of the phase-change material layer is Sb x Te y , where x+y=1 and 0.6<y<1. The phase-change material layer has a Te phase and a Sb 2 Te 3 phase embedded in the Te phase to form an island structure. When a temperature of the heating layer rises, the Te phase changes from a crystalline state to an amorphous state or a molten state, while the Sb 2 Te 3 phase maintains a crystalline state. When the temperature drops, the Te phase spontaneously crystallizes at low temperature with the crystalline Sb 2 Te 3 phase as a nucleation site simulating the process of spontaneously returning to a resting potential of neurons.
1 . A novel phase-change electrically-controlled photonic neuron device, comprising a substrate, a waveguide layer located on the substrate, a phase-change material layer located on the waveguide layer, and a heating layer for heating the phase-change material layer,
wherein a chemical formula of the phase-change material layer is Sb x Te y , where x+y=1 and 0.6<y<1, the phase-change material layer has two phases with different physical properties, a Sb 2 Te 3 phase and a Te phase respectively, and the Sb 2 Te 3 phase is embedded in the Te phase to form an island structure,
when a temperature of the heating layer rises to higher than a Te phase state transition threshold, the Te phase changes from a crystalline state to an amorphous state or a molten state, and the Sb 2 Te 3 phase maintains a crystalline state, and when the temperature of the heating layer drops to lower than the Te phase state transition threshold, the Te phase uses the Sb 2 Te 3 phase in crystalline state as a nucleation site and transforms from an amorphous state or a molten state to a crystalline state.
2 . The novel phase-change electrically-controlled photonic neuron device according to claim 1 , wherein the heating layer is selected from any one of ITO, In 2 O 3 , AZO, and TiO 2 .
3 . The novel phase-change electrically-controlled photonic neuron device according to claim 1 , wherein the device further comprises an electrode layer in contact with the heating layer, and the electrode layer is used to access an external power source and pass current into the heating layer to adjust the temperature of the heating layer.
4 . The novel phase-change electrically-controlled photonic neuron device according to claim 3 , wherein the electrode layer is one or a combination of Ti, Cr, Pt, Au, Al, and W.
5 . An on-chip photonic neural network system, comprising a nonlinear activation layer and a regulation unit, wherein the nonlinear activation layer is the novel phase-change electrically-controlled photonic neuron device according to claim 3 , and the regulation unit is used to apply a voltage pulse to the electrode layer, so that a transmittance of the nonlinear activation layer changes nonlinearly with a magnitude of the voltage pulse.
6 . The on-chip photonic neural network system according to claim 5 , wherein the regulation unit is used to regulate an amplitude of the voltage pulse to regulate a light transmittance of the phase-change material layer.
7 . An on-chip photonic neural network system, comprising a probability activation layer and a regulation unit, wherein the probability activation layer is the novel phase-change electrically-controlled photonic neuron device according to claim 3 , and the regulation unit is used to apply a voltage pulse to the electrode layer, so that a transmittance of the phase-change material layer changes randomly with a magnitude of the voltage pulse.
8 . The on-chip photonic neural network system according to claim 7 , wherein the regulation unit is used to regulate a width of the voltage pulse to regulate a probability of random transmission of light through the phase-change material layer.