Method and System to Measure Optical Characteristics of Light-Transmissive Materials
Systems and methods for determining optical properties of a workpiece (e.g., silicon carbide workpiece). In some examples, the method includes providing emission of one or more electromagnetic radiation signals to the silicon carbide semiconductor workpiece such that the one or more electromagnetic radiation signals are at least partially transmitted through the silicon carbide semiconductor workpiece and internally reflected within the silicon carbide semiconductor workpiece. In some implementations, the example method includes receiving the one or more electromagnetic radiation signals at one or more detectors.
1 . A method for determining one or more properties of a silicon carbide semiconductor workpiece, the method comprising:
providing emission of one or more electromagnetic radiation signals to the silicon carbide semiconductor workpiece such that the one or more electromagnetic radiation signals are at least partially transmitted through the silicon carbide semiconductor workpiece and internally reflected within the silicon carbide semiconductor workpiece;
receiving the one or more electromagnetic radiation signals at one or more detectors.
2 . The method of claim 1 , wherein the semiconductor workpiece comprises a first major surface, a second major surface opposite the first major surface, and an edge surface between the first major surface and the second major surface, wherein providing emission of one or more electromagnetic radiation signals to the silicon carbide semiconductor workpiece comprises transmitting the one or more electromagnetic radiation signals through the edge surface of the silicon carbide semiconductor workpiece.
3 . The method of claim 2 , wherein transmitting the one or more electromagnetic radiation signals through the edge surface of the silicon carbide semiconductor workpiece comprises transmitting the one or more electromagnetic radiation signals at an angle relative to the first major surface of the semiconductor workpiece, wherein the angle is in a range of about 0 degrees to a critical angle of silicon carbide semiconductor workpiece.
4 . The method of claim 1 , wherein the one or more electromagnetic radiation signals enter the semiconductor workpiece at a first portion of the silicon carbide semiconductor workpiece, are internally reflected through at least a second portion of the silicon carbide semiconductor workpiece, and exit a third portion of the silicon carbide semiconductor workpiece.
5 . The method of claim 4 , wherein the first portion is a first edge surface of the semiconductor workpiece and the second portion is a second edge surface of the semiconductor workpiece.
6 . The method of claim 1 , wherein the one or more electromagnetic radiation signals at least partially transmit through a major surface of the silicon carbide semiconductor workpiece as scattered electromagnetic radiation.
7 . The method of claim 1 , wherein the one or more electromagnetic radiation signals at least partially transmit through a major surface of the silicon carbide semiconductor workpiece as a result of non-parallelism of the major surface of the silicon carbide semiconductor workpiece with a second major surface of the silicon carbide semiconductor workpiece.
8 . The method of claim 1 , wherein the method comprises detecting an intensity of the one or more electromagnetic radiation signals at the one or more detectors.
9 . The method of claim 8 , wherein the method comprises determining an optical property of the silicon carbide semiconductor workpiece based at least in part on the intensity.
10 . The method of claim 9 , wherein the optical property comprises an absorption property.
11 . The method of claim 9 , wherein the optical property comprises one or more of a transmittance property, reflectance property, refractive index, dispersion, polarization, birefringence, opacity, scattering, fluorescence, phosphorescence, piezoelectric property, luminescence, photoluminescence, non-linear optical property, or temperature dependent optical property.
12 . The method of claim 9 , wherein the method comprises determining a surface quality of the silicon carbide semiconductor workpiece based at least in part on the intensity.
13 . The method of claim 9 , wherein the method comprises determining a parallelism of the silicon carbide semiconductor workpiece based at least in part on the intensity of the one or more electromagnetic radiation signals.
14 . The method of claim 1 , wherein the method comprises coupling the one or more electromagnetic radiation signals to the silicon carbide semiconductor workpiece with at least one input coupler, wherein the method comprises determining one or more input coupler properties of the at least one input coupler based at least in part on the one or more electromagnetic radiation signals received at the one or more detectors.
15 . The method of claim 1 , wherein the method comprises outputting the one or more electromagnetic radiation signals from the silicon carbide semiconductor workpiece with at least one output coupler, wherein the method comprises determining one or more output coupler properties of the at least one output coupler based at least in part on the one or more electromagnetic radiation signals received at the one or more detectors.
16 . The method of claim 1 , wherein the one or more electromagnetic radiation signals have a wavelength in a visible light spectral band.
17 . The method of claim 1 , wherein the one or more electromagnetic radiation signals comprise a reference image.
18 . The method of claim 1 , wherein the one or more electromagnetic radiation signals have a first signal in a red spectral band, a second signal in a green spectral band, and a third signal in a blue spectral band.
19 . The method of claim 1 , wherein the silicon carbide semiconductor workpiece comprises an optical device.
20 . A system, comprising:
one or more electromagnetic radiation sources operable to provide one or more electromagnetic radiation signals;
a workpiece holder operable to hold a silicon carbide semiconductor workpiece in an optical path such that the one or more electromagnetic radiation signals are at least partially transmitted through the semiconductor workpiece and internally reflected within the silicon carbide semiconductor workpiece; and
one or more detectors operable to receive the one or more electromagnetic radiation signals subsequent to the one or more electromagnetic radiation signals being internally reflected within the silicon carbide semiconductor workpiece.