MATERIALS AND PROCESSES FOR GENERATING RADIOISOTOPES
The present disclosure generally relates to materials, processes, generators, and/or systems, for generating radioisotope. The present disclosure also generally relates to ceramic materials comprising radioisotope suitable for use in a radioisotope generator. The present disclosure also generally relates to processes, generators and/or systems, for producing and capturing radioisotope. The present disclosure also generally relates to the preparation of radioisotope solutions for use in radiopharmacy and/or other clinical applications.
1 . A substrate for the generation of daughter radioisotopes, the substrate comprising:
a metal substrate; and
a tantalum oxide substrate disposed on a surface of the metal substrate,
wherein the tantalum oxide substrate has a porosity of less than 10% by volume.
2 . The substrate of claim 1 , further comprising a parent radioisotope immobilized on or near a surface of the tantalum oxide substrate, wherein the tantalum oxide substrate is configured to allow the emanation of a gaseous radioisotope away from the surface of the tantalum oxide substrate.
3 . The substrate of claim 2 , wherein the parent radioisotope is one or more solid compound phases that are crystalline.
4 . The substrate of claim 2 , wherein the parent radioisotope is one more solid compound phases that are amorphous.
5 . The substrate of claim 2 , wherein the parent radioisotope is one or more solid compound phases that are a combination of crystalline phases and amorphous phases.
6 . The substrate of claim 2 , wherein the parent radioisotope comprises one or more of 228 Th (Thorium-228) and 224 Ra (Radium-224).
7 . The substrate of claim 2 , wherein the daughter radioisotope has an average activity of at least 10 MBq per cm 2 .
8 . The substrate of claim 2 , wherein the parent radioisotope has an average activity of at least 100 MBq per cm 2 .
9 . The substrate of claim 1 , wherein the tantalum oxide substrate is formed by anodic polarization of the surface of the metal substrate.
10 . The substrate of claim 1 , wherein the tantalum oxide substrate is substantially non-porous.
11 . The substrate of claim 1 , wherein the substrate comprises one of a disk, plate, film, platen, slab, tube, tube-section, or monolith.
12 . The substrate of claim 1 , wherein the tantalum oxide substrate is formed by thermal oxidation of the surface of the metal substrate.
13 . The substrate of claim 1 , wherein the metal substrate comprises tantalum.