Transparent laminated passivation film structure, and preparation method and application thereof
A transparent laminated passivation film structure and a preparation method and application thereof are provided. The transparent laminated passivation film structure includes a first passivation layer, a second passivation layer, and a third passivation layer sequentially laminated on a surface of a silicon substrate. The material of the first passivation layer is a hydrogenated silicon oxide film. The material of the second passivation layer is one selected from a hydrogenated silicon carbon nitride film, a hydrogenated silicon carbide film, a hydrogenated silicon nitride film, a hydrogenated silicon carbon nitride oxide film, a hydrogenated silicon carbide oxide film, and a hydrogenated silicon nitride oxide film. The material of the third passivation layer is one or a laminated film of more selected from a hydrogenated aluminum oxide film, a hydrogen-containing silicon nitride film, and a hydrogenated silicon oxide film. The transparent laminated passivation film structure has excellent surface and bulk passivation effects.
1 . A transparent laminated passivation film structure, comprising a first passivation layer, a second passivation layer, and a third passivation layer, wherein the first passivation layer, the second passivation layer, and the third passivation layer are sequentially laminated on a surface of a silicon substrate; wherein a material of the first passivation layer is a hydrogenated silicon oxide film; a material of the second passivation layer is one selected from a hydrogenated silicon carbon nitride film, a hydrogenated silicon carbide film, a hydrogenated silicon nitride film, a hydrogenated silicon carbon nitride oxide film, a hydrogenated silicon carbide oxide film, and a hydrogenated silicon nitride oxide film; a material of the third passivation layer is one or a laminated film of more selected from a hydrogenated aluminum oxide film, a hydrogen-containing silicon nitride film, and the hydrogenated silicon oxide film.
2 . The transparent laminated passivation film structure according to claim 1 , wherein the silicon substrate comprises a hydrogen element and at least one of a carbon element and a nitrogen element, and a concentration of each element gradually decreases from the surface to a body.
3 . The transparent laminated passivation film structure according to claim 2 , wherein a hydrogen concentration on the surface of the silicon substrate is 1×10 19 cm −3 −1×10 21 cm −3 .
4 . The transparent laminated passivation film structure according to claim 3 , wherein a nitrogen concentration on the surface of the silicon substrate is 1×10 19 cm −3 −1×10 22 cm −3 , and/or a carbon concentration on the surface of the silicon substrate is 1×10 19 cm −3 −1×10 22 cm −3 .
5 . The transparent laminated passivation film structure according to claim 1 , wherein a hydrogen concentration of the first passivation layer is 1×10 19 cm −3 −1×10 22 cm −3 , a hydrogen concentration of the second passivation layer is 1×10 19 cm −3 −1×10 22 cm −3 , and a hydrogen concentration of the third passivation layer is 1×10 19 cm −3 −1×10 22 cm −3 .
6 . The transparent laminated passivation film structure according to claim 5 , wherein a refractive index of the second passivation layer is 1.0-5.0.
7 . The transparent laminated passivation film structure according to claim 5 , wherein transmittance of the first passivation layer at wavelengths above 400 nm is greater than 97%, and transmittance of the second passivation layer at the wavelengths above 400 nm is greater than 97%.
8 . The transparent laminated passivation film structure according to claim 5 , wherein a thickness of the first passivation layer is 1-20 nm, and a thickness of the second passivation layer is greater than or equal to 2 nm.
9 . A silicon-based semiconductor device, comprising the transparent laminated passivation film structure according to claim 1 .
10 . The transparent laminated passivation film structure according to claim 2 , wherein a hydrogen concentration of the first passivation layer is 1×10 19 cm −3 −1×10 22 cm −3 , a hydrogen concentration of the second passivation layer is 1×10 19 cm −3 −1×10 22 cm −3 , and a hydrogen concentration of the third passivation layer is 1×10 19 cm −3 −1×10 22 cm −3 .
11 . The transparent laminated passivation film structure according to claim 3 , wherein a hydrogen concentration of the first passivation layer is 1×10 19 cm −3 −1×10 22 cm −3 , a hydrogen concentration of the second passivation layer is 1×10 19 cm −3 −1×10 22 cm −3 , and a hydrogen concentration of the third passivation layer is 1×10 19 cm −3 −1×10 22 cm −3 .
12 . The transparent laminated passivation film structure according to claim 4 , wherein a hydrogen concentration of the first passivation layer is 1×10 19 cm −3 −1×10 22 cm −3 , a hydrogen concentration of the second passivation layer is 1×10 19 cm −3 −1×10 22 cm −3 , and a hydrogen concentration of the third passivation layer is 1×10 19 cm −3 −1×10 22 cm −3 .
13 . A preparation method of the transparent laminated passivation film structure according to claim 1 , comprising the following steps:
S1, cleaning the silicon substrate;
S2, preparing a silicon oxide film on the surface of the silicon substrate;
S3, depositing an amorphous silicon film containing carbon and/or nitrogen elements on the silicon oxide film;
S4, carrying out a high-temperature annealing treatment at a temperature of 600° C.-1200° C. to convert the amorphous silicon film into a polycrystalline silicon film;
S5, depositing one or a laminated film of more selected from aluminum oxide, silicon nitride, and silicon oxide on the polycrystalline silicon film; and
S6, carrying out a hydrogen injection treatment.
14 . The preparation method of the transparent laminated passivation film structure according to claim 13 , wherein in the step S6, an annealing treatment is adopted for hydrogenation, and a treatment temperature is 300° C.-1000° C.
15 . The preparation method of the transparent laminated passivation film structure according to claim 13 , wherein in the step S3, the amorphous silicon film containing carbon and/or nitrogen elements is deposited in situ by plasma-enhanced chemical vapor deposition (PECVD).
16 . The preparation method of the transparent laminated passivation film structure according to claim 13 , wherein in the transparent laminated passivation film structure, the silicon substrate comprises a hydrogen element and at least one of a carbon element and a nitrogen element, and a concentration of each element gradually decreases from the surface to a body.
17 . The preparation method of the transparent laminated passivation film structure according to claim 16 , wherein in the transparent laminated passivation film structure, a hydrogen concentration on the surface of the silicon substrate is 1×10 19 cm −3 −1×10 21 cm −3 .
18 . The preparation method of the transparent laminated passivation film structure according to claim 17 , wherein in the transparent laminated passivation film structure, a nitrogen concentration on the surface of the silicon substrate is 1×10 19 cm −3 −1×10 22 cm −3 , and/or a carbon concentration on the surface of the silicon substrate is 1×10 19 cm −3 −1×10 22 cm −3 .
19 . The preparation method of the transparent laminated passivation film structure according to claim 13 , wherein in the transparent laminated passivation film structure, a hydrogen concentration of the first passivation layer is 1×10 19 cm −3 −1×10 22 cm −3 , a hydrogen concentration of the second passivation layer is 1×10 19 cm −3 −1×10 22 cm −3 , and a hydrogen concentration of the third passivation layer is 1×10 19 cm −3 −1×10 22 cm −3 .
20 . The preparation method of the transparent laminated passivation film structure according to claim 19 , wherein in the transparent laminated passivation film structure, a refractive index of the second passivation layer is 1.0-5.0.