Photovoltaic cell, method for manufacturing same, and photovoltaic module
A photovoltaic cell is provided, which includes a substrate; a first passivation layer and a first anti-reflection layer disposed on a front surface of the substrate; and a second passivation layer, a PPW layer and at least one silicon nitride layer Si u N v (1<u/v<4) disposed on a rear surface of the substrate. The at least one silicon nitride layer has a refractive index and a thickness in respective ranges of 1.9 to 2.5 and 50 nm to 100 nm. The second passivation layer includes at least one aluminum oxide layer Al x O y (0.8<y/x<1.6), a refractive index and a thickness of which are respectively in ranges of 1.4 to 1.6 and 4 nm to 20 nm. The PPW layer includes at least one silicon oxynitride layer Si r O s N t (r>s>t), a refractive index and a thickness of which are respectively in ranges of 1.5 to 1.8 and 1 nm to 30 nm.
1. A photovoltaic cell, comprising:
a substrate;
a first passivation layer on a front surface of the substrate; and
a second passivation layer, a polarization phenomenon weakening (PPW) layer and at least one silicon nitride layer Si u N y that are stacked on a rear surface of the substrate in a direction away from the substrate, wherein 1<u/v<4;
wherein the second passivation layer includes a first silicon oxide layer and at least one aluminum oxide layer Al x O y , wherein 0.8<y/x<1.6, a thickness of the first silicon oxide layer is in a range of 0.1 nm to 5 nm, and a thickness of the at least one aluminum oxide layer is in a range of 4 nm to 20 nm;
wherein the PPW layer includes a second silicon oxide layer and at least one silicon oxynitride layer Si r O s N t , wherein r>s>t, a thickness of the second silicon oxide layer is in a range of 0.5nm to 5 nm, and a thickness of the at least one silicon oxynitride layer is in a range of 1 nm to 30 nm.
2. The photovoltaic cell according to claim 1 , further comprising a third silicon oxide layer disposed on a surface of the at least one silicon nitride layer facing away from the rear surface of the substrate.
3. The photovoltaic cell according to claim 1 , wherein the at least one silicon nitride layer includes a first silicon nitride layer, a second silicon nitride layer and a third silicon nitride layer stacked in the direction away from the substrate, wherein a thickness of the first silicon nitride layer is in a range of 5 nm to 20 nm, a thickness of the second silicon nitride layer is in a range of 20 nm to 40 nm, and a thickness of the third silicon nitride layer is in a range of 40 nm to 75 nm.
4. The photovoltaic cell according to claim 3 , wherein refractive indexes of the first silicon nitride layer, the second silicon nitride layer and the third silicon nitride layer decrease layer by layer in the direction away from the substrate, a refractive index of the first silicon nitride layer is in a range of between 2.1 to 2.5, a refractive index of the second silicon nitride layer is in a range of 2 to 2.3, and a refractive index of the third silicon nitride layer is in a range of 1.9 to 2.1.
5. The photovoltaic cell according to claim 2 , wherein the number of silicon atoms is not less than the number of oxygen atoms in the third silicon oxide layer.
6. The photovoltaic cell according to claim 2 , wherein a thickness of the third silicon oxide layer is in a range of 0.5 nm to 5 nm.
7. The photovoltaic cell according to claim 1 , wherein the at least one silicon nitride layer includes a first silicon nitride layer and a second silicon nitride layer that are stacked in the direction away from the substrate, wherein a thickness of the first silicon nitride layer is in a range of 15 nm to 40 nm, and a thickness of the second silicon nitride layer is in a range of 35 nm to 110 nm.
8. The photovoltaic cell according to claim 1 , wherein the substrate includes a P-type silicon and an N-type doped layer.
9. The photovoltaic cell according to claim 1 , wherein the first passivation layer includes at least one of a silicon oxide layer, an aluminum oxide layer, a silicon nitride layer, a silicon oxynitride layer.
10. The photovoltaic cell according to claim 1 , further comprising a first electrode penetrating through the first passivation layer and a second electrode penetrating through the second passivation layer.
11. A photovoltaic module, comprising at least one cell string, wherein each of the at least one cell string includes a plurality of photovoltaic cells electrically connected, and wherein each of the plurality of photovoltaic cells includes:
a substrate;
a first passivation layer disposed on a front surface of the substrate; and
a second passivation layer, a polarization phenomenon weakening (PPW) layer and at least one silicon nitride layer Si u N y that are stacked on a rear surface of the substrate in a direction away from the substrate, wherein 1<u/v<4;
wherein the second passivation layer includes a first silicon oxide layer and at least one aluminum oxide layer Al x O y , wherein 0.8<y/x<1.6, a thickness of the first silicon oxide layer is in a range of 0.1 nm to 5 nm, and a thickness of the at least one aluminum oxide layer is in a range of 4 nm to 20 nm;
wherein the PPW layer comprises a second silicon oxide layer and at least one silicon oxynitride layer Si r O s N t , wherein r>s>t, a thickness of the second silicon oxide layer is in a range of 0.5 nm to 5 nm, and a thickness of the at least one silicon oxynitride layer is in a range of 1 nm to 30 nm.
12. The photovoltaic module according to claim 11 , wherein further comprising a third silicon oxide layer disposed on a surface of the at least one silicon nitride layer facing away from the rear surface of the substrate.
13. The photovoltaic module according to claim 11 , wherein the at least one silicon nitride layer comprises a first silicon nitride layer, a second silicon nitride layer and a third silicon nitride layer stacked in the direction away from the substrate, wherein a thickness of the first silicon nitride layer is in a range of 5 nm to 20 nm, a thickness of the second silicon nitride layer is in a range of 20 nm to 40 nm, and a thickness of the third silicon nitride layer is in a range of 40 nm to 75 nm.
14. The photovoltaic module according to claim 13 , wherein refractive indexes of the first silicon nitride layer, the second silicon nitride layer and the third silicon nitride layer decrease layer by layer in the direction away from the substrate, a refractive index of the first silicon nitride layer is in a range of between 2.1 to 2.5, a refractive index of the second silicon nitride layer is in a range of 2 to 2.3, and a refractive index of the third silicon nitride layer is in a range of 1.9 to 2.1.
15. The photovoltaic module according to claim 12 , wherein the number of silicon atoms is not less than the number of oxygen atoms in the third silicon oxide layer.
16. The photovoltaic module according to claim 12 , wherein a thickness of the third silicon oxide layer is in a range of 0.5 nm to 5 nm.
17. The photovoltaic module according to claim 11 , wherein the at least one silicon nitride layer includes a first silicon nitride layer and a second silicon nitride layer that are stacked in the direction away from the substrate, wherein a thickness of the first silicon nitride layer is in a range of 15 nm to 40 nm, and a thickness of the second silicon nitride layer is in a range of 35 nm to 110 nm.
18. The photovoltaic module according to claim 11 , wherein the substrate includes a P-type silicon and an N-type doped layer.
19. The photovoltaic module according to claim 11 , wherein the first passivation layer includes at least one of a silicon oxide layer, an aluminum oxide layer, a silicon nitride layer, a silicon oxynitride layer.
20. The photovoltaic module according to claim 11 , further comprising a first electrode penetrating through the first passivation layer and a second electrode penetrating through the second passivation layer.