SEMICONDUCTOR STRUCTURE
A semiconductor structure includes packaging structures and a substrate. Each packaging structure includes a light-transmitting layer, micro-LED chips, a first insulating layer, redistribution layers, a second insulating layer, and conductive pieces. The micro-LED chips are on the light-transmitting layer and include an electrode surface and a light-emitting surface facing the light-transmitting layer. The first insulating layer is disposed on the light-transmitting layer and surrounds the micro-LED chips. The redistribution layers are disposed on the first insulating layer and pass through the first insulating layer to be electrically connected to the electrode surfaces. The second insulating layer is disposed on the first insulating layer. The conductive pieces are disposed on the second insulating layer, pass through the second insulating layer to be electrically connected to the redistribution layers, and are between the substrate and the micro-LED chips.
1 . A semiconductor structure comprising:
a plurality of packaging structures arranged side by side, wherein each of the plurality of packaging structures comprises:
a light-transmitting layer;
a plurality of micro light-emitting diode (micro-LED) chips arranged side by side on the light-transmitting layer, wherein each of the plurality of micro-LED chips comprises an electrode surface and a light-emitting surface opposite to the electrode surface, wherein the light-emitting surfaces of the plurality of micro-LED chips face the light-transmitting layer;
a first insulating layer disposed on the light-transmitting layer and surrounding the plurality of micro-LED chips;
a plurality of redistribution layers disposed on the first insulating layer and passing through the first insulating layer to be electrically connected to the electrode surfaces of the plurality of micro-LED chips;
a second insulating layer disposed on the first insulating layer; and
a plurality of conductive pieces disposed on the second insulating layer and passing through the second insulating layer to be electrically connected to the plurality of redistribution layers; and
a substrate disposed on the plurality of packaging structures, wherein the plurality of conductive pieces are between the substrate and the plurality of micro-LED chips.
2 . The semiconductor structure as claimed in claim 1 , wherein each of the plurality of micro-LED chips comprises a support frame breakpoint, and the support frame breakpoint is located on the light-emitting surface, the electrode surface, or a sidewall of each of the plurality of micro-LED chips.
3 . The semiconductor structure as claimed in claim 1 , wherein each of the plurality of micro-LED chips comprises a support frame breakpoint, and the support frame breakpoint is located at a corner of each of the plurality of micro-LED chips.
4 . The semiconductor structure as claimed in claim 1 , wherein the light-transmitting layer has a first thickness, and the plurality of micro-LED chips have a second thickness, wherein a ratio of first thickness to second thickness is between 1:100 and 10:1.
5 . The semiconductor structure as claimed in claim 1 , wherein a surface of the light-transmitting layer away from the plurality of micro-LED chips has a roughened structure.
6 . The semiconductor structure as claimed in claim 1 , wherein the light-transmitting layer comprises a body and a plurality of lens units, and the plurality of lens units protrude in an array from a surface of the body away from the plurality of micro-LED chips.
7 . The semiconductor structure as claimed in claim 1 , wherein the light-transmitting layer has an etching selectivity higher than that of the second insulating layer.
8 . The semiconductor structure as claimed in claim 1 , wherein a light transmittance of the light-transmitting layer is greater than a light transmittance of the first insulating layer.
9 . The semiconductor structure as claimed in claim 1 , wherein the light-transmitting layer comprises epoxy, silicone, polyurethane, or a combination thereof.
10 . The semiconductor structure as claimed in claim 1 , wherein the first insulating layer is non-coplanar with the light-emitting surfaces of the plurality of micro-LED chips.
11 . A semiconductor structure comprising:
a substrate; and
a plurality of packaging structures arranged side by side on the substrate, wherein each of the plurality of packaging structures comprises:
a light-transmitting layer;
a plurality of micro light-emitting diode (micro-LED) chips arranged side by side on the light-transmitting layer, wherein each of the plurality of micro-LED chips comprises an electrode surface and a light-emitting surface, and the electrode surface and the light-emitting surface are opposite each other, wherein the light-emitting surfaces of the plurality of micro-LED chips face the light-transmitting layer;
a first insulating layer disposed on the light-transmitting layer and surrounding the plurality of micro-LED chips;
a plurality of redistribution layers disposed on the first insulating layer and passing through the first insulating layer to be electrically connected to the electrode surfaces of the plurality of micro-LED chips;
a second insulating layer disposed on the first insulating layer; and
a plurality of conductive pieces disposed on the second insulating layer and passing through the second insulating layer to be electrically connected to the plurality of redistribution layers.
12 . The semiconductor structure as claimed in claim 11 , further comprising a release layer, and the release layer disposed between the substrate and the packaging structure.
13 . The semiconductor structure as claimed in claim 11 , wherein the plurality of micro-LED chips further comprise a reflective layer disposed on or around the electrode surface.
14 . The semiconductor structure as claimed in claim 11 , wherein one of the plurality of micro-LED chips comprises an electrode on the electrode surface, and the redistribution layer is conformally formed on a surface of the electrode.
15 . The semiconductor structure as claimed in claim 14 , wherein the electrode of the one micro-LED chip comprises an upper portion and a lower portion, and a step between the upper portion and the lower portion, wherein the redistribution layer is disposed on the electrode along the upper portion, the lower portion, and the step therebetween, and is conformally formed on a surface of the electrode.
16 . The semiconductor structure as claimed in claim 11 , wherein the second insulating layer comprises a plurality of film layers with different refractive indices to form a distributed Bragg reflector.
17 . The semiconductor structure as claimed in claim 11 , wherein the second insulating layer comprises a material having a light absorption rate greater than 90%.
18 . The semiconductor structure as claimed in claim 11 , wherein one of the plurality of micro-LED chips comprises a support frame breakpoint, and the support frame breakpoint is located on the light-emitting surface, the electrode surface, or a sidewall of each of the plurality of micro-LED chips.
19 . The semiconductor structure as claimed in claim 11 , wherein a material of the plurality of conductive pieces comprises tin, copper, gold, silver, nickel, indium, platinum, palladium, iridium, titanium, chromium, tungsten, aluminum, molybdenum, titanium, magnesium, zinc, germanium, or alloys thereof.
20 . The semiconductor structure as claimed in claim 11 , wherein each of the plurality of micro-LED chips comprises a support frame breakpoint, and the support frame breakpoint is located at a corner of each of the plurality of micro-LED chips.